Light-emitting semiconductor chip

• US 10,388,828 B2
• Filed: 07/21/2017
• Issued: 08/20/2019
• Est. Priority Date: 12/30/2009
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Peter, Matthias, Meyer, Tobias, Walter, Alexander, Taki, Tetsuya, Off, Juergen, Butendeich, Rainer, Hertkorn, Joachim
• Primary Examiner(s): Warren, Matthew E
• Application Number:
  US15/656,169
• Publication Number:
  US 20170324001A1
• Time in Patent Office: 760 Days
• Field of Search: 257 9, 257 12- 15, 257 20, 257 21
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

Claims

1. A semiconductor chip comprising:

a semiconductor body with a semiconductor layer sequence, wherein the semiconductor layer sequence comprises an n-conductive multilayer structure, a p-conductive semiconductor layer and an active region provided for generating radiation, and wherein the active region is disposed between the n-conductive multilayer structure and the p-conductive semiconductor layer;

wherein the n-conductive multilayer structure has a doping profile comprising exactly one doping peak; and

wherein the n-conductive multilayer structure comprises barrier layers and a quantum structure with a plurality of first quantum layers, wherein the first quantum layers of the plurality of first quantum layers are separated by the barrier layers, wherein the quantum structure comprises a low doped sub-region in which the first quantum layers and the barrier layers are low doped,

wherein the doping peak is disposed between the low doped sub-region and the active region, and

wherein the doping peak has a distance from the active region that is between 2 nm and 20 nm, inclusive.

2. The semiconductor chip according to claim 1, wherein the doping peak directly adjoins the low doped sub-region.

3. The semiconductor chip according to claim 1, wherein the active region comprises a plurality of second quantum layers, wherein the doping peak is arranged between a first quantum layer of the plurality of first quantum layers of the n-conductive multilayer structure that is closest to the active region and a second quantum layer of the plurality of second quantum layers of the active region that is closest to the n-conductive multilayer structure.

4. The semiconductor chip according to claim 3, wherein a band gap of the first quantum layer is at least as large as a band gap of the second quantum layer.

5. The semiconductor chip according to claim 1, wherein a first doping concentration in the doping peak is at least five times as high as a second doping concentration in the low doped sub-region of the n-conductive multilayer structure.

6. The semiconductor chip according to claim 1, wherein a third doping concentration in the doping peak is at least 4*10¹⁸ cm⁻

3, and wherein a fourth doping concentration in the low doped sub-region is, at most, 8*10¹⁷ cm<sup>−

3</sup>.

7. The semiconductor chip according to claim 1, wherein the doping peak has a vertical extent that is between 1 nm and 30 nm, inclusive.

8. The semiconductor chip according to claim 1, wherein the doping peak has a vertical extent that is between 5 nm and 20 nm, inclusive.

9. The semiconductor chip according to claim 1, wherein the doping profile comprises a first doping peak and a second doping peak, wherein at least one quantum layer of the plurality of first quantum layers is disposed between the first doping peak and the second doping peak.

10. The semiconductor chip according to claim 1, wherein the active region is based on a nitride compound semiconductor material.

11. The semiconductor chip according to claim 1, wherein a crystal structure of the n-conductive multilayer structure comprises V-shaped indentations.

12. The semiconductor chip according to claim 1, wherein a growth substrate for the semiconductor layer sequence is removed from the semiconductor body.

13. A semiconductor chip comprising:

a semiconductor body with a semiconductor layer sequence, wherein the semiconductor layer sequence comprises an n-conductive multilayer structure, a p-conductive semiconductor layer and an active region provided for generating radiation, and wherein the active region is disposed between the n-conductive multilayer structure and the p-conductive semiconductor layer;

wherein the n-conductive multilayer structure has a doping profile comprising exactly one doping peak; and

wherein the n-conductive multilayer structure comprises barrier layers and a quantum structure with a plurality of first quantum layers, wherein the first quantum layers of the plurality of first quantum layers are separated by the barrier layers, wherein the quantum structure comprises a low doped sub-region in which the first quantum layers and the barrier layers are low doped,

wherein the doping peak is disposed between the low doped sub-region and the active region, and

wherein the doping peak has a distance from the active region that is between 2 nm and 20 nm, inclusive, and

wherein a crystal structure of the n-conductive multilayer structure comprises V-shaped indentations.