Method for providing hermetic electrical feedthrough
First Claim
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1. A method of fabricating a hermetic electrical feedthrough, the method comprising:
- providing a ceramic sheet, and having an upper surface and a lower surface, wherein said sheet includes silicon dioxide;
forming at least one via hole in said sheet extending from said upper surface to said lower surface;
inserting a conductive thickfilm paste, including platinum, into said via hole;
laminating said sheet with said conductive thick film paste in said via hole between an upper ceramic sheet, and a lower ceramic sheet, to form a laminated substrate wherein said via hole is encased in ceramic;
selecting an oxygen controlled environment, between 10−
38 and 10−
3 atmospheres of oxygen partial pressure, by introduction of other gasses selected from the group consisting of C02/CO, C02/NH3, C02/H2, H20/H2, H20/NH3, H20/CO, Nitrogen, or Argon, under vacuum to balance platinum oxidation and silicon dioxide decomposition of said laminated substrate;
firing said laminated substrate in said oxygen controlled environment to a temperature to sinter said laminated substrate to form a single sintered structure and cause said conductive thick film paste in said via hole to form a metallized via, including platinum in contact with ceramic, and cause said laminated substrate to form a fired laminated substrate and a hermetic seal around said metallized via; and
removing said upper sheet material and said lower sheet material by lapping or grinding, to expose an upper and a lower surface of said metallized via.
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Abstract
This invention provides methods for processing of platinum metallized high temperature co-fired ceramic (HTCC) components with minimum deleterious reaction between platinum and the glass constituents of the ceramic-glass body. The process comprises co-firing a multilayer laminate green ceramic-glass body with via structures filled with a platinum powder-based material in a reducing atmosphere with a specified level of oxygen partial pressure. The oxygen partial pressure should be maintained above a minimum threshold value for a given temperature level.
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Citations
16 Claims
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1. A method of fabricating a hermetic electrical feedthrough, the method comprising:
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providing a ceramic sheet, and having an upper surface and a lower surface, wherein said sheet includes silicon dioxide; forming at least one via hole in said sheet extending from said upper surface to said lower surface; inserting a conductive thickfilm paste, including platinum, into said via hole; laminating said sheet with said conductive thick film paste in said via hole between an upper ceramic sheet, and a lower ceramic sheet, to form a laminated substrate wherein said via hole is encased in ceramic; selecting an oxygen controlled environment, between 10−
38 and 10−
3 atmospheres of oxygen partial pressure, by introduction of other gasses selected from the group consisting of C02/CO, C02/NH3, C02/H2, H20/H2, H20/NH3, H20/CO, Nitrogen, or Argon, under vacuum to balance platinum oxidation and silicon dioxide decomposition of said laminated substrate;firing said laminated substrate in said oxygen controlled environment to a temperature to sinter said laminated substrate to form a single sintered structure and cause said conductive thick film paste in said via hole to form a metallized via, including platinum in contact with ceramic, and cause said laminated substrate to form a fired laminated substrate and a hermetic seal around said metallized via; and removing said upper sheet material and said lower sheet material by lapping or grinding, to expose an upper and a lower surface of said metallized via. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of fabricating a hermetic electrical feedthrough, the method comprising:
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providing a ceramic sheet and having an upper surface and a lower surface, wherein said sheet includes silicon dioxide; forming at least one via hole in said sheet extending from said upper surface to said lower surface; inserting a conductive thickfilm paste including platinum into said via hole forming a substrate; selecting an oxygen controlled environment between 10−
38 and 10−
3 atmospheres of oxygen, the partial pressure of oxygen controlled by introduction of other gasses, selected from the group consisting of CO2/CO, CO2/NH3, CO2/H2, H2O/H2, H2O/NH3, H2O/CO, Nitrogen, or Argon, under vacuum to balance platinum oxidation and silicon dioxide decomposition of said substrate; andfiring said substrate to a temperature to sinter said sheet and cause said conductive thick film paste in said via hole to form a metallized via, including ceramic and platinum, and cause said sheet to form a hermetic seal around said metallized via. - View Dependent Claims (13, 14, 15, 16)
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Specification