×

Reflective mask blank, reflective mask and method of manufacturing semiconductor device

  • US 10,394,113 B2
  • Filed: 12/15/2015
  • Issued: 08/27/2019
  • Est. Priority Date: 12/24/2014
  • Status: Active Grant
First Claim
Patent Images

1. A reflective mask blank comprising:

  • a multilayer reflective film; and

    a phase shift film that shifts the phase of EUV light formed in that order on a substrate;

    wherein,root mean square roughness (Rms), obtained by measuring a 1 μ



    1 μ

    m region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 μ

    m

    1
    is not more than 17 nm4.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×