Apparatus and methods for inspecting reticles

• US 10,395,361 B2
• Filed: 11/03/2017
• Issued: 08/27/2019
• Est. Priority Date: 08/10/2015
• Status: Active Grant

• Current Assignee: KLA-Tencor Corporation
• Original Assignee: KLA-Tencor Corporation
• Inventors: Sezginer, Abdurrahman, Daneshpanah, Mohammad Mehdi
• Primary Examiner(s): Dunphy, David F
• Application Number:
  US15/803,628
• Publication Number:
  US 20180082415A1
• Time in Patent Office: 662 Days
• CPC Class Codes: G01N 2021/95676 Masks, reticles, shadow masks
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G03F 1/84 Inspecting
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G06T 2207/10144 Varying exposure
• CPC Class Codes: G06T 2207/10152 Varying illumination
• CPC Class Codes: G06T 2207/30148 Semiconductor; IC; Wafer
• CPC Class Codes: G06T 7/001 using an image reference approach

Abstract

Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire a plurality of images at different imaging configurations from each of a plurality of pattern areas of a test reticle. A reticle near field is recovered for each of the pattern areas of the test reticle based on the acquired images from each pattern area of the test reticle. The recovered reticle near field is then used to determine whether the test reticle or another reticle will likely result in unstable wafer pattern or a defective wafer.

Claims

1. A method of qualifying a photolithographic reticle, the method comprising:

using an imaging tool to acquire a plurality of images at different illumination configurations and/or different imaging configurations from each of a plurality of pattern areas of a test reticle;

recovering a reticle near field for each of the pattern areas of the test reticle based on the acquired images from each pattern area of the test reticle; and

using the recovered reticle near field to determine whether the test reticle or another reticle will likely result in an unstable wafer pattern or a defective wafer.

2. The method of claim 1, wherein the reticle near field is directly analyzed to determine whether the test reticle or another reticle will likely result in an unstable wafer pattern or a defective wafer.

3. The method of claim 1, wherein the plurality of images are acquired at a field or pupil plane.

4. The method of claim 1, wherein the recovered reticle near field is used to detect defects in the test reticle or in simulated wafer images that are simulated from the recovered reticle near field, wherein defect detection including comparing intensity and/or phase for a same die at different times, for adjacent dies, for a die and its corresponding golden die, or for a die and a corresponding die from a reticle copy with an identical design to the test reticle.

5. The method of claim 1, wherein the reticle near field is recovered without using a design database that was used to fabricate the test reticle.

6. The method of claim 1, wherein the acquired images include at least three reflective images that are acquired at different imaging conditions that are selected to result in a same reticle near field, and wherein the different imaging conditions include different focus settings, different pupil shapes, or polarization analyzer settings, wherein the different illumination conditions include different source intensity distribution and/or polarization settings.

7. The method of claim 1, wherein the acquired images include at least three transmitted images that are acquired at different imaging conditions that are selected to result in a same reticle near field, and wherein the different imaging conditions include different focus settings, different pupil shapes, or polarization analyzer settings, wherein the different illumination conditions include different source intensity distribution and/or polarization settings.

8. The method of claim 1, further comprising:

applying a lithography model to the reticle near field for the test reticle to simulate a plurality of test wafer images, and

analyzing the simulated test wafer images to determine whether the test reticle will likely result in an unstable or defective wafer,

wherein the lithography model is configured to simulate a photolithography process.

9. The method of claim 8, wherein the lithography model simulates an illumination source having a different shape than an illumination shape of an inspection tool for acquiring images of the test reticle or another reticle or wafer.

10. The method of claim 8, wherein the lithography model is calibrated with images rendered from a design database for a calibration reticle.

11. The method of claim 8, wherein the lithography model is calibrated with images acquired from a calibration reticle.

12. The method of claim 8, wherein the lithography model includes a compact resist model.

13. The method of claim 8, wherein the lithography model is applied to the reticle near field, which was recovered for the test reticle, under a plurality of different lithography process conditions, and wherein analyzing the simulated test wafer images includes determining whether the test reticle will likely result in an unstable wafer under the different lithography process conditions by comparing portions of the simulated test images associated with different process conditions and a same reticle area.

14. An imaging system for qualifying a photolithographic reticle, the system comprising:

a light source for generating an incident beam;

an illumination optics module for directing the incident beam onto a reticle;

a collection optics module for directing an output beam from each pattern area of the reticle to at least one sensor;

at least one sensor for detecting the output beam and generating an image or signal based on the output beam; and

a controller that is configured to perform the following operations;

causing the acquiring of plurality of images at different illumination configurations and/or different imaging configurations from each of a plurality of pattern areas of a test reticle;

recovering a reticle near field for each of the pattern areas of the test reticle based on the acquired images from each pattern area of the test reticle; and

using the recovered reticle near field to determine whether the test reticle or another reticle will likely result in an unstable wafer pattern or a defective wafer.

15. The system of claim 14, wherein the reticle near field is directly analyzed to determine whether the test reticle or another reticle will likely result in an unstable wafer pattern or a defective wafer.

16. The system of claim 14, wherein the plurality of images are acquired at a field or pupil plane.

17. The system of claim 14, wherein the recovered reticle near field is used to detect defects in the test reticle or in simulated wafer images that are simulated from the recovered reticle near field, wherein defect detection including comparing intensity and/or phase for a same die at different times, for adjacent dies, for a die and its corresponding golden die, or for a die and a corresponding die from a reticle copy with an identical design to the test reticle.

18. The system of claim 14, wherein the reticle near field is recovered without using a design database that was used to fabricate the test reticle.

19. The system of claim 14, wherein the acquired images include at least three reflective images that are acquired at different imaging conditions that are selected to result in a same reticle near field, and wherein the different imaging conditions include different focus settings and different pupil shapes.

20. The system of claim 14, wherein the acquired images include at least three transmitted images that are acquired at different imaging conditions that are selected to result in a same reticle near field, and wherein the different imaging conditions include different focus settings and different pupil shapes.

21. The system of claim 14, wherein the controller is further configured for:

applying a lithography model to the reticle near field for the test reticle to simulate a plurality of test wafer images, and

analyzing the simulated test wafer images to determine whether the test reticle will likely result in an unstable or defective wafer,

wherein the lithography model is configured to simulate a photolithography process.

22. The system of claim 21, wherein the lithography model simulates an illumination source having a different shape than an illumination shape of an inspection tool for acquiring images of the test reticle or another reticle or wafer.

23. The system of claim 21, wherein the lithography model is calibrated with images rendered from a design database for a calibration reticle.

24. The system of claim 21, wherein the lithography model is calibrated with images acquired from a calibration reticle.

25. The system of claim 21, wherein the lithography model includes a compact resist model.

26. The system of claim 21, wherein the lithography model is applied to the reticle near field, which was recovered for the test reticle, under a plurality of different lithography process conditions, and wherein analyzing the simulated test wafer images includes determining whether the test reticle will likely result in an unstable wafer under the different lithography process conditions by comparing portions of the simulated test images associated with different process conditions and a same reticle area.