Memory array with horizontal source line and sacrificial bitline per virtual source
First Claim
1. A memory device comprising:
- an array of memory cells wherein each memory cell comprises;
a respective magnetic random access memory (MRAM) element; and
a respective gating transistor;
a plurality of bit lines which are routed parallel to each other, wherein each bit line is associated with a respective memory cell of said array of memory cells;
a common wordline coupled to gates of gating transistors of said array of memory cells;
a common source line coupled to sources of said gating transistors, wherein said common source line is routed perpendicular to said plurality of bit lines within said array of memory cells; and
a sacrificial circuit element coupled to a sacrificial bit line, coupled to said common wordline and coupled to said common source line, wherein said sacrificial circuit element is operable to provide a desired voltage to said common source line wherein said desired voltage originates from said sacrificial bit line.
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Accused Products
Abstract
A memory device comprising an array of memory cells wherein each memory cell includes a respective magnetic random access memory (MRAM) element, and a respective gating transistor. A plurality of bit lines are routed parallel to each other, wherein each bit line is associated with a respective memory cell of the array of memory cells. A common word line is coupled to gates of gating transistors of the array of memory cells. A common source line is coupled to sources of the gating transistors, wherein the common source line is routed perpendicular to the plurality of bit lines within the array of memory cells. A sacrificial circuit element is coupled to a sacrificial bit line, coupled to the common word line and coupled to the common source line, wherein the sacrificial circuit element is operable to provide a desired voltage to the common source line wherein the desired voltage originates from the sacrificial bit line.
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Citations
20 Claims
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1. A memory device comprising:
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an array of memory cells wherein each memory cell comprises; a respective magnetic random access memory (MRAM) element; and a respective gating transistor; a plurality of bit lines which are routed parallel to each other, wherein each bit line is associated with a respective memory cell of said array of memory cells; a common wordline coupled to gates of gating transistors of said array of memory cells; a common source line coupled to sources of said gating transistors, wherein said common source line is routed perpendicular to said plurality of bit lines within said array of memory cells; and a sacrificial circuit element coupled to a sacrificial bit line, coupled to said common wordline and coupled to said common source line, wherein said sacrificial circuit element is operable to provide a desired voltage to said common source line wherein said desired voltage originates from said sacrificial bit line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of writing data to a memory device, said method comprising:
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activating a common word line; applying a first voltage to an addressed bit line of a plurality of bit lines; and applying a second voltage to remainder bit lines of said plurality of bit lines, wherein a data bit value is stored into an addressed memory cell associated with said addressed bit line during a write cycle, and wherein further said memory device comprises; an array of memory cells comprising said addressed memory cell, wherein each memory cell of said array of memory cells comprises; a respective magnetic random access memory (MRAM) element; and a respective gating transistor; said plurality of bit lines routed parallel to each other, wherein each bit line is associated with a respective memory cell of said array of memory cells; said common word line coupled to gates of gating transistors of said array of memory cells; and said common source line coupled to sources of said gating transistors, wherein said common source line is routed perpendicular to said plurality of bit lines within said array of memory cells a sacrificial circuit element coupled to a sacrificial bit line, coupled to said common word line and coupled to said common source line, wherein said sacrificial circuit element is operable to provide a desired voltage to said common source line wherein said desired voltage originates from said sacrificial bit line. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method for programming a memory device comprising:
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selecting a bit line of a memory cell of an array; driving a word line coupled to a gate of a gating transistor to activate the memory cell, wherein unselected bit lines are grounded to a desired voltage, causing the desired voltage to bleed onto a common virtual source line of the cell, and wherein the selected bit line and the common source line are disposed perpendicularly to one another; driving the selected bit line to a voltage higher than the desired voltage to program a first data value into the memory cell; driving the selected bit line to a voltage lower than the desired voltage to program a second data value into the memory cell. - View Dependent Claims (18, 19, 20)
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Specification