Method and apparatus for determining a cell state of a resistive memory cell

• US 10,395,734 B2
• Filed: 05/25/2017
• Issued: 08/27/2019
• Est. Priority Date: 06/18/2015
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Papandreou, Nikolaos, Pozidis, Charalampos, Stanisavljevic, Milos
• Primary Examiner(s): Siddique, Mushfique
• Application Number:
  US15/605,936
• Publication Number:
  US 20170330616A1
• Time in Patent Office: 824 Days
• CPC Class Codes: G11C 11/5678 using amorphous/crystalline phase transition storage elements
• CPC Class Codes: G11C 13/0004 comprising amorphous/crystalline phase transition cells
• CPC Class Codes: G11C 13/004 Reading or sensing circuits or methods
• CPC Class Codes: G11C 2013/0045 Read using current through the cell
• CPC Class Codes: G11C 2013/0054 Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
• CPC Class Codes: G11C 2213/79 Array wherein the access device being a transistor
• CPC Class Codes: G11C 7/062 Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs

Abstract

A sensing circuit senses a sensing voltage of a resistive memory cell and outputs a resultant value in response to the sensing voltage which is indicative for the actual cell state. A settling circuit includes a plurality of current mirrors for settling the sensing voltage to a certain target voltage representing one of M programmable cell states. A prebiasing circuit is provided for prebiasing a bitline capacitance of the resistive memory cell such that the sensing voltage is close to the certain target voltage. A resistance circuit includes a plurality of resistors connected in series and coupled in parallel to the resistive memory cell. The resistance circuit is configured to reduce an effective resistance seen by the prebiasing circuit. The settling circuit and the resistance circuit are configured to form a plurality of current-resistor pairs switchable to define a linear range detection currents corresponding to the certain target voltages.

Claims

1. A device for determining an actual cell state of a resistive memory cell having a plurality M of programmable cell states, the device comprising:

a sensing circuit configured to sense a sensing voltage of the resistive memory cell and to output a resultant value in response to the sensing voltage which is indicative of the actual cell state,

a settling circuit, including a plurality of current mirrors, configured to settle the sensing voltage to a certain target voltage representing one of the M programmable cell states,

a prebiasing circuit configured to pre-bias a bitline capacitance of the resistive memory cell such that the sensing voltage is close to the certain target voltage, and

a resistance circuit including a plurality of resistors connected in series and coupled in parallel to the resistive memory cell, wherein the resistance circuit is configured to reduce an effective resistance seen by the prebiasing circuit,

wherein the settling circuit and the resistance circuit are configured to form a plurality of current-resistor pairs being switchable to define a linear range of detection currents corresponding to the certain target voltages, each of the plurality of current-resistor pairs including one current mirror of the plurality of current mirrors and one resistor.

2. The device of claim 1, wherein the prebiasing circuit is coupled to a first node connected to a bitline of the resistive memory cell and to the resistance circuit.

3. The device of claim 2, wherein the prebiasing circuit includes a serial connection of a voltage source, a resistor and a switch for connecting and disconnecting the prebiasing circuit to the first node.

4. The device of claim 3, wherein the resistor of the prebiasing circuit has an equal or lower resistance compared to the resistance circuit coupled in parallel to the resistive memory cell.

5. The device of claim 1, wherein the plurality of resistors are coupled in series to each other and wherein the plurality of current mirrors are coupled in parallel to each other.

6. The device of claim 5, further comprising a comparing circuit configured to provide a comparison result by comparing the sensing voltage and a reference voltage.

7. The device of claim 6, wherein the comparing circuit includes a plurality of voltage comparators.

8. The device of claim 7, wherein the number of voltage comparators corresponds to the number of current-resistor pairs.

9. The device of claim 8, wherein each of the plurality of voltage comparators is allocated to one current-resistor pair.

10. The device of claim 9, wherein each of the voltage comparators provides a comparison result and wherein each comparison result is usable as a control signal for controlling switching of a corresponding current-resistor pair.

11. The device of claim 10, wherein the resistance circuit includes a plurality of switches, each of which is coupled in parallel to one of the resistors and is configured to receive the control signal and to deactivate the corresponding resistor by shortening the corresponding resistor or to activate the corresponding resistor by releasing the shortening.

12. The device of claim 10, wherein the settling circuit includes a plurality of switches, each of which is coupled in series to one of the current mirrors.

13. A resistive memory device, comprising:

a memory including a plurality of resistive memory cells having a plurality M of programmable levels, and

a read/write apparatus configured to read and write data in the resistive memory cells, wherein the read/write apparatus includes a read device for determining an actual cell state of a resistive memory cell having a plurality M of programmable cell states, the read device comprising;

a sensing circuit configured to sense a sensing voltage of the resistive memory cell and to output a resultant value in response to the sensing voltage which is indicative of the actual cell state,

a settling circuit including a plurality of current mirrors configured to settle the sensing voltage to a certain target voltage representing one of the M programmable cell states,

a prebiasing circuit configured to pre-bias a bitline capacitance of the resistive memory cell such that the sensing voltage is close to the certain target voltage, and

a resistance circuit including a plurality of resistors connected in series and coupled in parallel to the resistive memory cell, wherein the resistance circuit is configured to reduce an effective resistance seen by the prebiasing circuit,

wherein the settling circuit and the resistance circuit are configured to form a plurality of current-resistor pairs being switchable to define a linear range of detection currents corresponding to the certain target voltages, each of the plurality of current-resistor pairs including one current mirror of the plurality of current mirrors and one resistor.

14. A method for determining an actual cell state of a resistive memory cell having a plurality M of programmable cell states, the method comprising:

prebiasing a bitline capacitance of the resistive memory cell such that a sensing voltage is close to a certain target voltage which is indicative of the actual cell state,

wherein an effective resistance seen by a prebiasing circuit is reduced by a resistance circuit, the resistance circuit including a plurality of resistors coupled in parallel to the resistive memory cell,

settling the sensing voltage by a settling circuit to a certain target voltage representing one of the M programmable cell states, wherein the settling circuit and the resistance circuit are configured to form a plurality of current-resistor pairs being switchable to define a linear range detection currents corresponding to the certain target voltages, each of the plurality of current-resistor pairs including one current mirror of the plurality of current mirrors and one resistor,

sensing the sensing voltage of the resistive memory cell, and

outputting a resultant value in response to the sensing voltage.