×

Si precursors for deposition of SiN at low temperatures

  • US 10,395,917 B2
  • Filed: 02/22/2018
  • Issued: 08/27/2019
  • Est. Priority Date: 03/14/2013
  • Status: Active Grant
First Claim
Patent Images

1. A method of depositing a silicon nitride thin film on a substrate in a reaction space by plasma enhanced atomic layer deposition (PEALD), the method comprising:

  • carrying out a plurality of deposition cycles, at least one of the deposition cycles comprising;

    (a) introducing a vapor-phase silicon reactant comprising silicon, iodine and hydrogen into the reaction space;

    (b) flowing a purge gas through the reaction space to remove excess silicon reactant and reaction byproducts from the reaction space with the aid of a purge gas;

    (c) contacting the substrate with a nitrogen plasma; and

    (d) flowing a purge gas through the reaction space to remove excess nitrogen plasma and reaction byproducts from the reaction space;

    wherein the reaction space comprises a susceptor and a showerhead plate with a gap of 0.5 to 5 cm between the susceptor and the showerhead plate;

    wherein the nitrogen plasma is produced by applying RF power with a density of from 0.02 W/cm2 to 2.0 W/cm2 between the susceptor and the showerhead plate to generate a plasma in a nitrogen precursor;

    wherein the silicon reactant is consumed at a rate of from 0.1 mg per deposition cycle to about 50 mg per deposition cycle; and

    wherein the substrate is a 300 mm wafer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×