Si precursors for deposition of SiN at low temperatures
First Claim
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1. A method of depositing a silicon nitride thin film on a substrate in a reaction space by plasma enhanced atomic layer deposition (PEALD), the method comprising:
- carrying out a plurality of deposition cycles, at least one of the deposition cycles comprising;
(a) introducing a vapor-phase silicon reactant comprising silicon, iodine and hydrogen into the reaction space;
(b) flowing a purge gas through the reaction space to remove excess silicon reactant and reaction byproducts from the reaction space with the aid of a purge gas;
(c) contacting the substrate with a nitrogen plasma; and
(d) flowing a purge gas through the reaction space to remove excess nitrogen plasma and reaction byproducts from the reaction space;
wherein the reaction space comprises a susceptor and a showerhead plate with a gap of 0.5 to 5 cm between the susceptor and the showerhead plate;
wherein the nitrogen plasma is produced by applying RF power with a density of from 0.02 W/cm2 to 2.0 W/cm2 between the susceptor and the showerhead plate to generate a plasma in a nitrogen precursor;
wherein the silicon reactant is consumed at a rate of from 0.1 mg per deposition cycle to about 50 mg per deposition cycle; and
wherein the substrate is a 300 mm wafer.
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Abstract
Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
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Citations
19 Claims
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1. A method of depositing a silicon nitride thin film on a substrate in a reaction space by plasma enhanced atomic layer deposition (PEALD), the method comprising:
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carrying out a plurality of deposition cycles, at least one of the deposition cycles comprising; (a) introducing a vapor-phase silicon reactant comprising silicon, iodine and hydrogen into the reaction space; (b) flowing a purge gas through the reaction space to remove excess silicon reactant and reaction byproducts from the reaction space with the aid of a purge gas; (c) contacting the substrate with a nitrogen plasma; and (d) flowing a purge gas through the reaction space to remove excess nitrogen plasma and reaction byproducts from the reaction space; wherein the reaction space comprises a susceptor and a showerhead plate with a gap of 0.5 to 5 cm between the susceptor and the showerhead plate; wherein the nitrogen plasma is produced by applying RF power with a density of from 0.02 W/cm2 to 2.0 W/cm2 between the susceptor and the showerhead plate to generate a plasma in a nitrogen precursor; wherein the silicon reactant is consumed at a rate of from 0.1 mg per deposition cycle to about 50 mg per deposition cycle; and wherein the substrate is a 300 mm wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A plasma enhanced atomic layer deposition (PEALD) method for forming a silicon nitride thin film, the method comprising a plurality of cycles, each cycle comprising alternately and sequentially contacting a 300 mm wafer in a reaction space with a vapor phase pulse of a silicon reactant and a second reactant comprising a reactive species generated by a plasma from a nitrogen precursor,
wherein the silicon reactant comprises silicon, hydrogen and iodine; -
wherein the reaction space comprises a susceptor and a showerhead plate with a gap of 0.5 to 5 cm between the susceptor and the showerhead plate; wherein the plasma is formed by applying RF power with a density of from 0.02 W/cm2 to 2.0 W/cm2 between the susceptor and the showerhead plate to generate a plasma in a nitrogen precursor; and wherein the silicon reactant is consumed at a rate of from 0.1 mg per deposition cycle to about 50 mg per deposition cycle.
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Specification