Method and apparatus for filling a gap

• US 10,395,919 B2
• Filed: 07/28/2016
• Issued: 08/27/2019
• Est. Priority Date: 07/28/2016
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Masaru, Zaitsu, Fukazawa, Atsuki
• Primary Examiner(s): Garber, Charles D
• Assistant Examiner(s): Liu, Xiaoming
• Application Number:
  US15/222,780
• Publication Number:
  US 20180033616A1
• Time in Patent Office: 1,125 Days
• Field of Search: None
• CPC Class Codes: C23C 16/0245 by etching with a plasma
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02208 the precursor containing a compound comprising Si
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02222 the compound being a silazane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02315 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264

Abstract

According to the invention a method for filling one or more gaps created during manufacturing of a feature on a substrate is provided by providing the substrate in a reaction chamber and providing a deposition method. The deposition method comprises; providing an anisotropic plasma to bombard a bottom area of a surface of the one or more gaps with ions thereby creating adsorption sites at the bottom area; introducing a first reactant to the substrate; and, allowing the first reactant to react with the adsorption sites at the bottom area of the surface to fill the one or more gaps from the bottom area upwards.

Claims

1. A method for filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising:

in a cycle, providing an anisotropic plasma comprising a noble gas to bombard a bottom area of a surface of the one or more gaps with ions thereby creating adsorption sites comprising dangling bonds for a first reactant at the bottom area;

in the cycle, after the step of providing an anisotropic plasma, introducing the first reactant to the substrate; and

,

in the cycle, allowing the first reactant to react with the created adsorption sites at the bottom area of the surface relative to side walls of the surface to deposit material on the bottom surface relative to the side walls, and

repeating the cycle to fill the one or more gaps from the bottom area upwards,

wherein during introducing the first reactant, a sputtering plasma is created by providing a sputtering gas to relocate material in a top area of the surface relative to the bottom area of the surface.

2. The method of claim 1, wherein the method comprises removing excess reactant and byproduct from the reaction chamber after providing the anisotropic plasma and/or introducing the first reactant.

3. The method according to claim 1, wherein the first reactant comprises a methyl end group.

4. The method according to claim 1, wherein the noble gas plasma comprises a helium plasma.

5. The method according to claim 1, wherein the noble gas plasma comprises an argon plasma.

6. The method according to claim 1, wherein further comprising grounding a lower electrode.

7. The method according to claim 1, wherein the sputtering plasma comprises a hydrogen plasma.

8. The method according to claim 1, wherein the sputtering plasma comprises a nitrogen plasma.

9. The method according to claim 1, wherein the sputtering plasma comprises an oxygen plasma.

10. The method according to claim 1, wherein the sputtering plasma comprises an argon plasma.

11. The method according to claim 1, wherein the first reactant comprises an organosilicon compound.

12. The method according to claim 11, wherein the organosilicon compound comprises a tetraorganosilane.

13. The method according to claim 11, wherein the organosilicon compound comprises methyl end groups.

14. The method according to claim 11, wherein the organosilicon compound comprises tetramethylsilane.

15. The method according to claim 11, wherein the organosilicon compound comprises a carbon terminated silicon precursor.

16. The method according to claim 11, wherein the organosilicon compound comprises nitrogen.

17. The method according to claim 11, wherein the first reactant comprises silanol.

18. The method according to claim 11, wherein the first reactant comprises siloxane.

19. The method according to claim 11, wherein the first reactant comprises a silane alkoxide.

20. The method according to claim 1, wherein the first reactant comprises silazane.

21. A semiconductor processing apparatus comprising:

one or more reaction chambers for accommodating a substrate provided with one or more gaps created during manufacturing of a feature on the substrate;

a plasma gas source comprising a noble gas for a plasma gas in gas communication via a plasma gas valve with one of the reaction chambers;

a radio frequency power source constructed and arranged to create an anisotropic plasma of the plasma gas between two parallel plates in at least one of the one or more reaction chambers to bombard a bottom of a surface relative to side walls of the one or more gaps with ions thereby creating adsorption sites at the bottom;

a first source for a first reactant in gas communication via a first valve with the at least one of the reaction chambers; and

,

a controller operably connected to the plasma and first gas valve, and the radio frequency power source and configured and programmed to control;

a timing and an amount of the plasma gas, via the plasma gas valve, and the radio frequency source to use the plasma gas source and the radiofrequency power source to create an anisotropic plasma to bombard the bottom of the surface of the one or more gaps with ions thereby creating adsorption sites comprising dangling bonds for a first reactant at the bottom; and

,

after the step of the timing and an amount of the plasma gas, a timing and an amount of the first reactant to deposit the first reactant in the bottom of the surface of the one or more gaps to react with the created adsorption sites at the bottom of the surface relative to the side walls,

wherein one of the two parallel plates is grounded.