Micro-transfer-printable flip-chip structures and methods
First Claim
1. A method of making a semiconductor structure suitable for transfer printing, comprising:
- providing a support substrate;
providing a semiconductor support layer over the support substrate;
providing a semiconductor layer disposed over the semiconductor support layer;
forming a plurality of semiconductor devices disposed in, on, or over the semiconductor support layer, each of the semiconductor devices comprising one or more electrical contacts exposed on a side of the semiconductor device opposite the semiconductor support layer;
forming a connection post on each of the exposed electrical contacts, the connection posts extending in a direction away from the semiconductor support layer;
patterning the semiconductor layer to separate the semiconductor devices in order to form a corresponding plurality of completed semiconductor devices;
patterning the semiconductor support layer to expose a portion of the support substrate;
forming a patterned release layer on or over the plurality of completed semiconductor devices, the patterned release layer (i) in contact with portions of the patterned semiconductor support layer on which the complete semiconductor devices are disposed and (ii) in contact with at least a portion of the support substrate;
providing a handle substrate;
disposing a conformable bonding layer on the patterned release layer or on the handle substrate;
bonding the handle substrate to the patterned release layer with the bonding layer; and
removing the support substrate to expose at least a portion of the patterned semiconductor support layer.
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Accused Products
Abstract
In certain embodiments, a method of making a semiconductor structure suitable for transfer printing (e.g., micro-transfer printing) includes providing a support substrate and disposing and processing one or more semiconductor layers on the support substrate to make a completed semiconductor device. A patterned release layer and, optionally, a capping layer are disposed on or over the completed semiconductor device and the patterned release layer or capping layer, if present, are bonded to a handle substrate with a bonding layer. The support substrate is removed to expose the completed semiconductor device and, in some embodiments, a portion of the patterned release layer. In some embodiments, an entry path is formed to expose a portion of the patterned release layer. In some embodiments, the release layer is etched and the completed semiconductor devices transfer printed (e.g., micro-transfer printed) from the handle substrate to a destination substrate.
282 Citations
20 Claims
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1. A method of making a semiconductor structure suitable for transfer printing, comprising:
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providing a support substrate; providing a semiconductor support layer over the support substrate; providing a semiconductor layer disposed over the semiconductor support layer; forming a plurality of semiconductor devices disposed in, on, or over the semiconductor support layer, each of the semiconductor devices comprising one or more electrical contacts exposed on a side of the semiconductor device opposite the semiconductor support layer; forming a connection post on each of the exposed electrical contacts, the connection posts extending in a direction away from the semiconductor support layer; patterning the semiconductor layer to separate the semiconductor devices in order to form a corresponding plurality of completed semiconductor devices; patterning the semiconductor support layer to expose a portion of the support substrate; forming a patterned release layer on or over the plurality of completed semiconductor devices, the patterned release layer (i) in contact with portions of the patterned semiconductor support layer on which the complete semiconductor devices are disposed and (ii) in contact with at least a portion of the support substrate; providing a handle substrate; disposing a conformable bonding layer on the patterned release layer or on the handle substrate; bonding the handle substrate to the patterned release layer with the bonding layer; and removing the support substrate to expose at least a portion of the patterned semiconductor support layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor structure suitable for transfer printing, comprising:
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a handle substrate; a bonding layer disposed in contact with the handle substrate; a patterned release layer disposed in contact with the bonding layer; a plurality of completed semiconductor devices disposed on or over the patterned release layer and each attached to one or more anchors disposed on the handle substrate with at least one tether, each of the plurality of completed semiconductor devices comprising at least one electrical contact disposed on a side of the completed semiconductor device between the completed semiconductor device and the handle substrate; a connection post disposed on each of the at least one electrical contacts and extending from the electrical contact toward the handle substrate; and a patterned semiconductor support layer comprising a surface on which is disposed the plurality of completed semiconductor devices and wherein the surface is in contact with a portion of the patterned release layer. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A semiconductor structure suitable for transfer printing, comprising:
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a handle substrate; a bonding layer disposed in contact with the handle substrate; a capping layer disposed in contact with the bonding layer; a patterned release layer disposed in contact with capping layer; a plurality of completed semiconductor devices disposed on or over the patterned release layer and each attached to at least one anchor disposed on the handle substrate with at least one tether, each of the plurality of completed semiconductor devices comprising at least one electrical contact disposed on a side of the completed semiconductor device between the completed semiconductor device and the handle substrate; a connection post disposed on each of the at least one electrical contacts and extending from the electrical contact toward the handle substrate; and a patterned semiconductor support layer comprising a surface on which is disposed the completed semiconductor devices and wherein the surface is in contact with a portion of the patterned release layer. - View Dependent Claims (17, 18, 19, 20)
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Specification