Equal spacer formation on semiconductor device
First Claim
1. A method for fabricating a semiconductor device having field-effect transistors (FETs) associated with regions of the device, comprising:
- epitaxially growing a first semiconductor material in a first source/drain region within a first region of the device associated with a first FET;
selectively forming a capping layer on the first semiconductor material, including forming a layer over the first region and a second region of the device associated with a second FET that reacts with the first semiconductor material to form the capping layer; and
epitaxially growing a second semiconductor material in a second source/drain region within the second region of the device, the capping layer capping the growth of the first semiconductor material during the epitaxial growth of the second semiconductor material.
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Abstract
A method for fabricating a semiconductor device having a uniform spacer thickness between field-effect transistors (FETs) associated with regions of the device is provided. A first semiconductor material is epitaxially grown in a first source/drain region within a first region of the device associated with a first FET. A capping layer is selectively formed on the first semiconductor material by forming a layer over the first and second regions that reacts with the first semiconductor material to form the capping layer. A second semiconductor material is epitaxially grown in a second source/drain region within a second region of the device associated with a second FET. The capping layer caps the growth of the first semiconductor material during the epitaxial growth of the second semiconductor material to provide the uniform spacer thickness between the first and second FETs.
11 Citations
15 Claims
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1. A method for fabricating a semiconductor device having field-effect transistors (FETs) associated with regions of the device, comprising:
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epitaxially growing a first semiconductor material in a first source/drain region within a first region of the device associated with a first FET; selectively forming a capping layer on the first semiconductor material, including forming a layer over the first region and a second region of the device associated with a second FET that reacts with the first semiconductor material to form the capping layer; and epitaxially growing a second semiconductor material in a second source/drain region within the second region of the device, the capping layer capping the growth of the first semiconductor material during the epitaxial growth of the second semiconductor material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for fabricating a semiconductor device having field-effect transistors (FETs) associated with regions of the device, comprising:
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epitaxially growing a first semiconductor material including silicon germanium (SiGe) in a first source/drain region within a first region of the device associated with a first FET; selectively forming a capping layer including silicon dioxide (SiO2) on the first semiconductor material, including forming a layer including germanium dioxide (GeO2) over the first region and a second region of the device associated with a second FET, and performing an anneal process to cause the SiGe to react with the GeO2 to form the SiO2; and epitaxially growing a second semiconductor material in a second source/drain region within the second region of the device, the capping layer capping the growth of the first semiconductor material during the epitaxial growth of the second semiconductor material. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification