×

Equal spacer formation on semiconductor device

  • US 10,395,994 B1
  • Filed: 03/05/2018
  • Issued: 08/27/2019
  • Est. Priority Date: 03/05/2018
  • Status: Active Grant
First Claim
Patent Images

1. A method for fabricating a semiconductor device having field-effect transistors (FETs) associated with regions of the device, comprising:

  • epitaxially growing a first semiconductor material in a first source/drain region within a first region of the device associated with a first FET;

    selectively forming a capping layer on the first semiconductor material, including forming a layer over the first region and a second region of the device associated with a second FET that reacts with the first semiconductor material to form the capping layer; and

    epitaxially growing a second semiconductor material in a second source/drain region within the second region of the device, the capping layer capping the growth of the first semiconductor material during the epitaxial growth of the second semiconductor material.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×