Device layer thin-film transfer to thermally conductive substrate
First Claim
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1. A semiconductor structure, comprising:
- a thin-film device layer;
an optoelectronic device disposed in the thin-film device layer, the optoelectronic device excitable by light at an application wavelength; and
a surrogate substrate permanently attached to the thin film device layer, wherein the surrogate substrate has a volume of substrate removed therefrom to form a via, the via aligned with a location of the optoelectronic device, a cross-sectional area of the via being about equal to an active area of the optoelectronic device, and a depth of the via being substantially less than a thickness of the surrogate substrate,wherein the light passes through the via and at least some of the surrogate substrate prior to reaching the optoelectronic device.
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Abstract
A semiconductor structure includes a thin-film device layer, an optoelectronic device disposed in the thin-film device layer, and a surrogate substrate permanently attached to the thin film device layer. The optoelectronic device is excitable by light at an application wavelength. The surrogate substrate is optically transparent and has a thermal conductivity of at least 300 W/m-K. The surrogate substrate has a volume of substrate removed therefrom to form a via. Light passes through the via and at least some of the surrogate substrate prior to reaching the optoelectronic device.
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Citations
14 Claims
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1. A semiconductor structure, comprising:
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a thin-film device layer; an optoelectronic device disposed in the thin-film device layer, the optoelectronic device excitable by light at an application wavelength; and a surrogate substrate permanently attached to the thin film device layer, wherein the surrogate substrate has a volume of substrate removed therefrom to form a via, the via aligned with a location of the optoelectronic device, a cross-sectional area of the via being about equal to an active area of the optoelectronic device, and a depth of the via being substantially less than a thickness of the surrogate substrate, wherein the light passes through the via and at least some of the surrogate substrate prior to reaching the optoelectronic device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification