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Device layer thin-film transfer to thermally conductive substrate

  • US 10,396,220 B2
  • Filed: 01/14/2019
  • Issued: 08/27/2019
  • Est. Priority Date: 12/18/2015
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a thin-film device layer;

    an optoelectronic device disposed in the thin-film device layer, the optoelectronic device excitable by light at an application wavelength; and

    a surrogate substrate permanently attached to the thin film device layer, wherein the surrogate substrate has a volume of substrate removed therefrom to form a via, the via aligned with a location of the optoelectronic device, a cross-sectional area of the via being about equal to an active area of the optoelectronic device, and a depth of the via being substantially less than a thickness of the surrogate substrate,wherein the light passes through the via and at least some of the surrogate substrate prior to reaching the optoelectronic device.

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