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Semiconductor device and display device

  • US 10,396,236 B2
  • Filed: 08/24/2017
  • Issued: 08/27/2019
  • Est. Priority Date: 11/27/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first electrode;

    a first insulating layer over the first electrode, wherein the first insulating layer comprises nitrogen;

    a second insulating layer over the first insulating layer, wherein the second insulating layer comprises oxygen;

    a first oxide semiconductor layer over the second insulating layer and overlapping with the first electrode, wherein the first oxide semiconductor layer comprises indium, gallium, and zinc;

    a second electrode and a third electrode each over the first oxide semiconductor layer, wherein the second electrode and the third electrode each comprise copper;

    a third insulating layer over the first oxide semiconductor layer, the second electrode, and the third electrode, wherein the third insulating layer comprises oxygen and is in contact with the first oxide semiconductor layer; and

    a fourth insulating layer over the third insulating layer, wherein the fourth insulating layer comprises nitrogen.

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