Semiconductor device and display device
First Claim
1. A semiconductor device comprising:
- a first electrode;
a first insulating layer over the first electrode, wherein the first insulating layer comprises nitrogen;
a second insulating layer over the first insulating layer, wherein the second insulating layer comprises oxygen;
a first oxide semiconductor layer over the second insulating layer and overlapping with the first electrode, wherein the first oxide semiconductor layer comprises indium, gallium, and zinc;
a second electrode and a third electrode each over the first oxide semiconductor layer, wherein the second electrode and the third electrode each comprise copper;
a third insulating layer over the first oxide semiconductor layer, the second electrode, and the third electrode, wherein the third insulating layer comprises oxygen and is in contact with the first oxide semiconductor layer; and
a fourth insulating layer over the third insulating layer, wherein the fourth insulating layer comprises nitrogen.
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Accused Products
Abstract
Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal.
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Citations
60 Claims
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1. A semiconductor device comprising:
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a first electrode; a first insulating layer over the first electrode, wherein the first insulating layer comprises nitrogen; a second insulating layer over the first insulating layer, wherein the second insulating layer comprises oxygen; a first oxide semiconductor layer over the second insulating layer and overlapping with the first electrode, wherein the first oxide semiconductor layer comprises indium, gallium, and zinc; a second electrode and a third electrode each over the first oxide semiconductor layer, wherein the second electrode and the third electrode each comprise copper; a third insulating layer over the first oxide semiconductor layer, the second electrode, and the third electrode, wherein the third insulating layer comprises oxygen and is in contact with the first oxide semiconductor layer; and a fourth insulating layer over the third insulating layer, wherein the fourth insulating layer comprises nitrogen. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A semiconductor device comprising:
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a first electrode; a first insulating layer over the first electrode, wherein the first insulating layer comprises nitrogen; a second insulating layer over the first insulating layer, wherein the second insulating layer comprises oxygen; a first oxide semiconductor layer over the second insulating layer and overlapping with the first electrode, wherein the first oxide semiconductor layer comprises indium, gallium, and zinc; a second electrode and a third electrode each over the first oxide semiconductor layer, wherein the second electrode and the third electrode each comprise copper; a third insulating layer over the first oxide semiconductor layer, the second electrode, and the third electrode, wherein the third insulating layer comprises oxygen and is in contact with the first oxide semiconductor layer; a fourth insulating layer over the third insulating layer, wherein the fourth insulating layer comprises nitrogen; and a fourth electrode over the fourth insulating layer, wherein the first electrode and the fourth electrode overlap with each other with the first oxide semiconductor layer interposed therebetween.
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21. A semiconductor device comprising:
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a first electrode; a first insulating layer over the first electrode, wherein the first insulating layer comprises nitrogen; a second insulating layer over the first insulating layer, wherein the second insulating layer comprises oxygen; a first oxide semiconductor layer over the second insulating layer and overlapping with the first electrode, wherein the first oxide semiconductor layer comprises indium, gallium, and zinc; a third insulating layer over the first oxide semiconductor layer, wherein the third insulating layer comprises oxygen; a second electrode and a third electrode each over the first oxide semiconductor layer and the third insulating layer, wherein the second electrode and the third electrode each comprise copper; and a fourth insulating layer over the second electrode and the third electrode. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A display device comprising:
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a first electrode; a first insulating layer over the first electrode, wherein the first insulating layer comprises nitrogen; a second insulating layer over the first insulating layer, wherein the second insulating layer comprises oxygen; a first oxide semiconductor layer over the second insulating layer and overlapping with the first electrode, wherein the first oxide semiconductor layer comprises indium, gallium, and zinc; a second electrode and a third electrode each over the first oxide semiconductor layer, wherein the second electrode and the third electrode each comprise copper; a third insulating layer over the first oxide semiconductor layer, the second electrode, and the third electrode, wherein the third insulating layer comprises oxygen and is in contact with the first oxide semiconductor layer; a fourth insulating layer over the third insulating layer, wherein the fourth insulating layer comprises nitrogen; a fifth insulating layer over the fourth insulating layer; and a pixel electrode over the fifth insulating layer and electrically connected to the third electrode. - View Dependent Claims (33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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46. A display device comprising:
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a first electrode; a first insulating layer over the first electrode, wherein the first insulating layer comprises nitrogen; a second insulating layer over the first insulating layer, wherein the second insulating layer comprises oxygen; a first oxide semiconductor layer over the second insulating layer and overlapping with the first electrode, wherein the first oxide semiconductor layer comprises indium, gallium, and zinc; a third insulating layer over the first oxide semiconductor layer, wherein the third insulating layer comprises oxygen; a second electrode and a third electrode each over the first oxide semiconductor layer and the third insulating layer, wherein the second electrode and the third electrode each comprise copper; a fourth insulating layer over the second electrode and the third electrode; a fifth insulating layer over the fourth insulating layer; and a pixel electrode over the fifth insulating layer and electrically connected to the third electrode. - View Dependent Claims (47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60)
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Specification