Semiconductor light emitting device

• US 10,396,242 B2
• Filed: 12/08/2017
• Issued: 08/27/2019
• Est. Priority Date: 07/24/2001
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Niki, Isamu, Yamada, Motokazu, Sano, Masahiko, Shioji, Shuji
• Primary Examiner(s): Sefer, Ahmed N
• Application Number:
  US15/836,429
• Publication Number:
  US 20180158988A1
• Time in Patent Office: 627 Days
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/26 Materials of the light emitting region
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: Y10T 428/24355 Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
• CPC Class Codes: Y10T 428/24479 including variation in thickness

Abstract

A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Claims

1. A semiconductor light emitting device comprising:

a substrate that has a main surface that comprises a plurality of protrusions in a two-dimensionally repeated pattern;

a plurality of semiconductor layers disposed on the main surface of the substrate and comprising a GaN based semiconductor; and

an ohmic electrode disposed on a top layer of the semiconductor layers and comprising a plurality of openings,

wherein each of the protrusions has a side surface that is inclined to a stacking plane of the semiconductor layers and configured to scatter or diffract light generated in the semiconductor layers, and

wherein at least one side surface of the protrusions is located in each of the openings in plan view of the semiconductor light emitting device.

2. The semiconductor light emitting device of claim 1, wherein, in a sectional view of the semiconductor light emitting device, the side surface has inclination angle that is not less than 105 degrees and not more than 160 degrees.

3. The semiconductor light emitting device of claim 2, wherein the inclination angle is not less than 115 degrees.

4. The semiconductor light emitting device of claim 3, wherein each of the openings has a shape of square, circle or equilateral triangle.

5. The semiconductor light emitting device of claim 4, wherein each of the openings has an area in a range from 10.8 to 59.3 μ

m².

6. The semiconductor light emitting device of claim 5, wherein the substrate is a C plane (0001) sapphire substrate and, in plan view of the semiconductor light emitting device, the protrusions do not have a side that is parallel to A-axis of the GaN based semiconductor layer.

7. The semiconductor light emitting device of claim 3, wherein the substrate is a C plane (0001) sapphire substrate and, in plan view of the semiconductor light emitting device, the protrusions do not have a side that is parallel to A-axis of the GaN based semiconductor layer.

8. The semiconductor light emitting device of claim 2, wherein the inclination angle is not less than 120 degrees.

9. The semiconductor light emitting device of claim 8, wherein each of the openings has a shape of square, circle or equilateral triangle.

10. The semiconductor light emitting device of claim 9, wherein each of the openings has an area in a range from 10.8 to 59.3 μ

m².

11. The semiconductor light emitting device of claim 10, wherein the substrate is a C plane (0001) sapphire substrate and, in plan view of the semiconductor light emitting device, the protrusions do not have a side that is parallel to A-axis of the GaN based semiconductor layer.

12. The semiconductor light emitting device of claim 8, wherein the substrate is a C plane (0001) sapphire substrate and, in plan view of the semiconductor light emitting device, the protrusions do not have a side that is parallel to A-axis of the GaN based semiconductor layer.

13. The semiconductor light emitting device of claim 1, wherein each of the openings has a rectangular, circular or triangular shape.

14. The semiconductor light emitting device of claim 1, wherein the openings have an elongated shape with at least one open end in plan view of the semiconductor light emitting device.

15. The semiconductor light emitting device of claim 1, wherein a relationship of L/S≥

0.024μ

m/μ

m²is satisfied where L is a sum of a length of an inner periphery of the openings and S is the total area of the ohmic electrode including the openings.

16. The semiconductor light emitting device of claim 1, wherein in a sectional view of the semiconductor light emitting device an edge of the ohmic electrode has a taper angle measured relative to the top layer of the semiconductor layers between 30 degrees and 90 degrees.

17. The semiconductor light emitting device of claim 1, wherein the ohmic electrode is a transparent electrode.

18. The semiconductor light emitting device of claim 1, wherein the ohmic electrode is an alloy or a multilayer film including at least two selected from the group consisting of Ni, Pd, Co, Fe, Ti, Cu, Rh, Au, Ru, W, Zr, Mo, Ta, Pt, Ag, oxides of these metals and nitrides of these metals.

19. The semiconductor light emitting device of claim 1, wherein the substrate is a C plane (0001) sapphire substrate and, in plan view of the semiconductor light emitting device, the protrusions do not have a side that is parallel to A-axis of the GaN based semiconductor layer.