Semiconductor light emitting diode

• US 10,396,248 B2
• Filed: 04/17/2017
• Issued: 08/27/2019
• Est. Priority Date: 04/17/2017
• Status: Active Grant

• Current Assignee: Lumens Co., Ltd.
• Original Assignee: Lumens Co., Ltd.
• Inventors: Yoo, Tae Kyung, Kim, Dae Won
• Primary Examiner(s): Wilczewski, Mary A
• Application Number:
  US15/488,689
• Publication Number:
  US 20180301596A1
• Time in Patent Office: 862 Days
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A semiconductor light emitting diode is disclosed. The semiconductor light emitting diode includes a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, a transparent electrode formed on the second conductive semiconductor layer, a non-conductive reflection film covering the circumferential surface of the transparent electrode and having one or more via-holes formed therein, a reflective electrode formed on the non-conductive reflection film, interconnection electrodes filled in the via-holes and electrically connecting the reflective electrode to the transparent electrode, and ohmic contact layers formed between the transparent electrode and the interconnection electrodes and filled in recesses formed at positions of the transparent electrode corresponding to the via-holes by etching or extending through the via-holes from the recesses.

Claims

1. A semiconductor light emitting diode comprising:

a first conductive semiconductor layer,

a second conductive semiconductor layer,

an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer,

a transparent electrode formed on the second conductive semiconductor layer,

a non-conductive reflection film covering a circumferential surface of the transparent electrode and having one or more via-holes formed therein,

a reflective electrode formed on the non-conductive reflection film,

interconnection electrodes filled in the via-holes and electrically connecting the reflective electrode to the transparent electrode, and

ohmic contact layers formed between the transparent electrode and the interconnection electrodes,

wherein a reflectance of the non-conductive reflection film for light at a wavelength of 400 nm is at least 80%,

wherein the non-conductive reflection film comprises first type of layers and second type of layers, the first type of layer and the second type of layer being stacked alternately, and

wherein the ohmic contact layers are filled in recesses formed by etching a portion of the transparent electrode corresponding to the via-holes.

2. The semiconductor light emitting diode according to claim 1, wherein the first type of layers comprise titanium dioxide (TiO₂) and the second type of layers comprise silicon dioxide (SiO₂).

3. The semiconductor light emitting diode according to claim 2, wherein a pair of the first type of layer and the second type of layer has a thickness of 40 to 200 nm to reflect ultraviolet (UV) light emitted from the active layer.

4. The semiconductor light emitting diode according to claim 3, wherein the transparent electrode comprises indium tin oxide (ITO), zinc oxide (ZnO) or a metal layer having a transmittance of at least 90% for light at a wavelength of 400 nm.

5. The semiconductor light emitting diode according to claim 1, wherein the transparent electrode has a thickness of 20 to 500 nm and contains at least one of nickel (Ni), titanium (Ti), tungsten (W), silver (Ag), chromium (Cr), palladium (Pd), and molybdenum (Mo).

6. The semiconductor light emitting diode according to claim 1, wherein non-conductive reflection film is composed of a light-transmitting material comprising at least one compound selected from SixO_y (where x and y are positive integers), Ti_mO_n (where m and n are positive integers), Ta₂O₅, and MgF₂.

7. The semiconductor light emitting diode according to claim 1, further comprising an n-type electrode unit arranged on the first conductive semiconductor layer.

8. The semiconductor light emitting diode according to claim 7, wherein the n-type electrode unit comprises an n-type electrode insulating layer, n-type electrodes filled in via-holes formed in the n-type electrode insulating layer, and an n-type bonding member arranged over the n-type electrode insulating layer and the n-type electrodes.

9. The semiconductor light emitting diode according to claim 8, wherein the n-type electrodes and the interconnection electrodes are aligned in a matrix structure.

10. The semiconductor light emitting diode according to claim 9, wherein the n-type electrodes and the interconnection electrodes form an engaged structure.