Laser

• US 10,396,521 B2
• Filed: 09/29/2017
• Issued: 08/27/2019
• Est. Priority Date: 09/29/2017
• Status: Active Grant

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Inventors: Kurczveil, Geza, Beausoleil, Raymond G., Liang, Di, Zhang, Chong, Kielpinski, David
• Primary Examiner(s): Nguyen, Tuan N
• Application Number:
  US15/720,493
• Publication Number:
  US 20190103719A1
• Time in Patent Office: 697 Days
• Field of Search: 372 25, 372 6
• CPC Class Codes: G02B 6/10 of the optical waveguide type G02B6/02, G02B6/24 take precedence; devices or arrangements for the control of light by electric, magnetic, electro-magnetic or acoustic means G02F1/00; transferring the modulation of modulated light G02F2/00; optical logic elements G02F3/00; optical analogue/digital converters G02F7/00
• CPC Class Codes: H01S 3/0057 Temporal shaping, e.g. pulse compression, frequency chirping soliton generation and propagation G02F1/3513, H01S3/063 and H01S3/108
• CPC Class Codes: H01S 3/083 Ring lasers fibre ring lasers H01S3/06791
• CPC Class Codes: H01S 3/1118 Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
• CPC Class Codes: H01S 5/005 Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping H01S5/026, H01S5/18388 take precedence
• CPC Class Codes: H01S 5/0085 for modulating the output, i.e. the laser beam is modulated outside the laser cavity
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/0265 Intensity modulators intra-cavity modulators H01S5/0625
• CPC Class Codes: H01S 5/0601 comprising an absorbing region H01S5/0604, H01S5/0607, H01S5/0615 and H01S5/065 take precedence; bistable laser devices in general G02F3/026
• CPC Class Codes: H01S 5/0657 Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
• CPC Class Codes: H01S 5/1092 Multi-wavelength lasing
• CPC Class Codes: H01S 5/1221 Detuning between Bragg wavelength and gain maximum
• CPC Class Codes: H01S 5/141 using a wavelength selective device, e.g. a grating or etalon H01S5/146 takes precedence

Abstract

A laser includes a traveling wave laser cavity with an active section, a pulse stretcher, and a pulse compressor. The pulse stretcher is coupled to the waveguide before the active section and the pulse compressor is coupled to the waveguide after the active section.

Claims

1. A semiconductor laser, comprising:

a traveling wave laser cavity;

an active section coupled to a waveguide, the active section comprising a forward biased laser gain medium region and a saturatable absorber comprising a reverse biased laser gain medium region;

wherein the forward biased laser gain medium region is between 5 and 20 times longer than the reverse biased laser gain medium region;

a laser output from the active section coupled to the waveguide;

a pulse stretcher embedded m the traveling wave laser cavity; and

a pulse compressor embedded in the traveling wave laser cavity;

wherein, the traveling, wave laser cavity has a direction of propagation the pulse stretcher is coupled to the waveguide after the laser output and before the active section, in the direction of propagation; and

the pulse compressor is coupled to the waveguide after the active section and before the laser output, in the direction of propagation.

2. The laser of claim 1, wherein the pulse stretcher comprises a passive dispersive element.

3. The laser of claim 2, wherein the passive dispersive element comprises a waveguide Bragg grating, a horizontal slot waveguide, or a photonic crystal waveguide.

4. The laser of claim 1, wherein the pulse compressor comprises a passive dispersive element.

5. The laser of claim 4, wherein the passive dispersive element comprises a waveguide Bragg grating, a horizontal slot waveguide, or a photonic crystal waveguide.

6. The laser of claim 1, wherein the pulse stretcher lowers peak laser pulse power within the active section.

7. The laser of claim 6, wherein the pulse stretcher lowers peak laser pulse power to below a threshold for non-linear behavior within the laser gain medium.

8. The laser of claim 1, wherein an output of the pulse stretcher has a parabolic phase to wavelength profile.

9. The laser of claim 1, wherein the output of the pulse compressor has a constant wavelength to phase profile.

10. The laser of claim 1, further comprising a silicon-on-insulator (SOI) substrate, wherein the passive silicon waveguide, the pulse stretcher, and the pulse compressor comprise silicon structures formed on an upper layer of the SOI substrate, and the active section comprises a III-V quantum dot material bonded to the substrate.

11. The laser of claim 1, wherein the laser gain medium comprises a forward biased quantum dot medium, and the saturatable absorber comprises a reverse biased quantum dot medium.

12. An optical transmitter, comprising:

a semiconductor laser comprising;

a traveling wave laser cavity having a direction of propagation and comprising a passive silicon waveguide;

an active section coupled to the passive silicon waveguide, the active section comprising a forward biased laser gain medium and a saturatable absorber comprising a reverse biased laser gain medium region, wherein the forward biased laser gain medium region is between 5 and 20 times longer than the reverse biased laser gain medium region;

a laser output waveguide coupled to the cavity waveguide to output a multi-wavelength laser signal;

a pulse stretcher embedded in the passive silicon waveguide after the laser output and before the active section, in the direction of propagation; and

a pulse compressor embedded in the passive silicon waveguide after the active section and before the laser output, in the direction of propagation;

a modulator coupled to the laser output to modulate an electrical signal onto a multi-wavelength laser signal; and

an optical output to output the modulated multi-wavelength laser signal.

13. The transmitter of claim 12, wherein the pulse stretcher comprises a first passive silicon dispersive element, and the pulse compressor comprises a second passive silicon dispersive element.

14. The transmitter of claim 13, wherein the first passive silicon element and the second passive element comprise waveguide Bragg gratings, horizontal slot waveguides, or photonic crystal waveguides.

15. The transmitter of claim 12, further comprising:

a silicon-on-insulator (SOI) substrate, wherein;

the passive silicon cavity waveguide, the pulse stretcher, the pulse compressor, and the output waveguide comprise silicon structures formed on an upper layer of the SOI substrate,

the active section comprises a III-V quantum dot material bonded to the substrate, and

the modulator comprises a plurality of ring resonators disposed on the substrate.

16. The transmitter of claim 12, wherein the pulse stretcher lowers peak laser pulse power to below a threshold for non-linear behavior within the laser gain medium.

17. A method, comprising:

propagating a laser pulse within a traveling wave laser cavity comprising a waveguide;

stretching the laser pulse in using a pulse stretcher in a time domain to produce a stretched laser pulse having a lower peak power than the laser pulse;

amplifying the stretched laser pulse in an active section comprising a laser gain medium and a saturatable absorber of the traveling wave laser cavity, where the laser gain medium between 5 and 20 times longer than the saturatable absorber;

compressing the amplified stretched laser pulse in the time domain to produce a compressed laser pulse having a higher peak power than the amplified stretched laser pulse; and

outcoupling the compressed laser pulse to produce an output laser pulse.

18. The method of claim 17, further comprising stretching the laser pulse in the time domain by passing the pulse through a passive silicon dispersive element coupled to the passive silicon waveguide.

19. The method of claim 18, further comprising compressing the amplified laser pulse in the time domain by passing the pulse through a second passive silicon dispersive element coupled to the passive silicon waveguide.