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Wide dynamic range image sensor pixel cell

  • US 10,397,500 B1
  • Filed: 07/06/2018
  • Issued: 08/27/2019
  • Est. Priority Date: 03/01/2018
  • Status: Active Grant
First Claim
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1. An image sensor pixel cell for use in a wide dynamic range image sensor, the image sensor pixel cell comprising:

  • a floating drain node which is useful to transform an imaging related charge into an imaging related voltage signal and is directly connected to five components comprising;

    an input gate electrode of an amplifier transistor in a source follower configuration which is useful to couple out the imaging related voltage signal from the floating drain node through a row select transistor to a pixel cell array column line;

    a drain electrode of a first transfer transistor which in turn has a source electrode connected to a first photodiode with low sensitivity to light incident from a scene;

    a source electrode of a double conversion gain control transistor which in turn has a drain electrode connected to a reset transistor and also to a dynamic range enhancement capacitor;

    a drain electrode of a second transfer transistor which in turn has a source electrode connected to a second photodiode with high sensitivity to light incident from a scene in comparison to the first photodiode; and

    a drain electrode of a storage gate transfer transistor which in turn has a source electrode connected to the drain electrode of a third transfer transistor whose source electrode is connected to the first photodiode, wherein a storage capacitor is connected between the gate electrode and drain electrode of the third transfer transistor.

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