LED structure with a dynamic spectrum and a method

• US 10,398,000 B2
• Filed: 09/18/2018
• Issued: 08/27/2019
• Est. Priority Date: 05/13/2015
• Status: Active Grant

• Current Assignee: Illumipure Incorporated
• Original Assignee: illumiPure Corp.
• Inventors: Rantala, Juha
• Primary Examiner(s): Tran, Anh Q
• Application Number:
  US16/134,437
• Publication Number:
  US 20190037662A1
• Time in Patent Office: 343 Days
• Field of Search: None
• CPC Class Codes: A01G 7/045 with electric lighting
• CPC Class Codes: A01G 9/20 Forcing-frames; Lights , i.e. glass panels covering the forcing-frames
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H05B 45/20 Controlling the colour of the light
• CPC Class Codes: Y02P 60/14 Measures for saving energy, e.g. in green houses

Abstract

An integrated LED structure and a method of adjusting the emission spectrum of an integrated LED structure, for photobiological process is disclosed. The structure comprises a substrate; a plurality of optically isolated and electrically non-independent light emission areas integrated on the substrate; a light emitting semiconductor source of a first type mounted in the emission area(s); a light emitting semiconductor source of a second type mounted in the emission area(s); an electrical circuit layer for connecting the light emitting semiconductor sources in serial fashion for each emission area; and wavelength conversion materials. The emission areas are controlled with a common electrical drive current, and the emission output can be tuned by adjusting the common current value, to enable use of one luminaire for a large variety of biomass growing applications.

Claims

1. A method of adjusting an emission spectrum of a light emitting structure, the light emitting structure comprising a first light emitting semiconductor source emitting at a first peak of a first wavelength, and a second light emitting semiconductor source emitting at a second peak of a second wavelength, wherein the first and second light emitting semiconductor sources are electrically connected in series, the method comprising:

supplying a common current of a first magnitude to the serially-connected first and second light emitting semiconductors sources, wherein the first and second wavelengths excite at least one wavelength conversion material to respectively produce emission peaks in the emission spectrum at third and fourth wavelengths, wherein an intensity of the peaks at the third and fourth wavelengths in the emission spectrum comprises a first ratio in response to the first magnitude of the common current; and

supplying a common current of a second magnitude to the serially-connected first and second light emitting semiconductors sources, wherein the intensity of the peaks at the third and fourth wavelengths in the emission spectrum comprises a second ratio in response to the second magnitude of the common current, wherein the second ratio is different from the first ratio.

2. The method of claim 1, wherein the peaks at the third and fourth wavelengths in the emission spectrum are respectively configured to excite chlorophyll B and chlorophyll A.

3. The method of claim 1, wherein the third wavelength is between 620 and 640 nm, and wherein the fourth wavelength is between 650 and 670 nm.

4. The method of claim 1, wherein the first wavelength is in a range from 420 nm to 425 nm, and wherein the second wavelength is in a range from 435 nm to 438 nm.

5. The method of claim 1, wherein the first and second light emitting semiconductor sources have different current-to-light conversion characteristics.

6. The method of claim 1, wherein the first and second light emitting semiconductor sources are of different types.

7. The method of claim 1, wherein the first light emitting semiconductor source comprises a vertical semiconductor diode, and wherein the second light emitting semiconductor source comprises a sapphire based semiconductor diode.

8. The method of claim 1, wherein the first and second wavelengths are between 365 to 440 nm.

9. The method of claim 1, wherein the common currents of the first and second magnitudes comprise pulsed currents.

10. The method of claim 1, wherein there are first and second wavelength conversion materials, wherein the first wavelength excites the first wavelength conversion material to produce the emission peak in the emission spectrum at the third wavelength, and wherein the second wavelength excites the second wavelength conversion material to produce the emission peak in the emission spectrum at the fourth wavelength.

11. The method of claim 10, wherein the first light emitting semiconductor source is mounted in a first light emission area on a substrate, and wherein the second light emitting semiconductor source is mounted in a second light emission area on the substrate.

12. The method of claim 11, wherein the first wavelength conversion material is in the first light emission area and formed on the first light emitting semiconductor source, and wherein the second wavelength conversion material is in the second light emission area and formed on the second light emitting semiconductor source.

13. The method of claim 12, wherein the first light emission area and the second light emission area are optically isolated from each other.

14. The method of claim 1, wherein the common current is supplied by an electrical control interface, wherein the electrical control interface is adjustable to supply the common current of the first and second magnitudes.

15. The method of claim 1, wherein the first magnitude is lower than the second magnitude, and wherein the first ratio is lower than the second ratio.

16. The method according to claim 15, wherein the first ratio is in a range of 0.5:

1 to 1.1;

1, and wherein the second ratio is in a range from 1.2;

1 to 3;

1.

17. The method of claim 1, wherein the emission spectrum further comprises emission peaks at the first and second wavelengths,

wherein an intensity of the peaks at the first and second wavelengths in the emission spectrum comprises a third ratio in response to the first magnitude of the common current, and

wherein the intensity of the peaks at the first and second wavelengths in the emission spectrum comprises a fourth ratio in response to the second magnitude of the common current, wherein the fourth ratio is different from the third ratio.

18. The method of claim 17, wherein the first magnitude is lower than the second magnitude, and wherein the third ratio is lower than the fourth ratio.

19. A method of adjusting an emission spectrum of a light emitting structure, the light emitting structure comprising a first light emitting semiconductor source emitting at a first peak of a first wavelength, and a second light emitting semiconductor source emitting at a second peak of a second wavelength, wherein the first and second light emitting semiconductor sources are electrically connected in series, the method comprising:

adjusting a magnitude of a common current to the serially-connected first and second light emitting semiconductors sources, wherein the first and second wavelengths excite at least one wavelength conversion material to respectively produce emission peaks in the emission spectrum at third and fourth wavelengths, wherein an intensity of the peaks at the third and fourth wavelengths in the emission spectrum comprises first ratio that varies with the magnitude of the common current.

20. The method of claim 19, wherein the emission spectrum further comprises emission peaks at the first and second wavelengths, wherein an intensity of the peaks at the first and second wavelengths in the emission spectrum comprises a second ratio that varies with the magnitude of the common current.