Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate
First Claim
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1. A method for growth of a large-area merged crystal, the method comprising:
- depositing an adhesion layer on a surface of a handle substrate, said adhesion layer having a melting point at a first temperature;
bonding at least a first crystal and a second crystal to said adhesion layer to form a tiled substrate while said adhesion layer is at a temperature of no less than said first temperature, to melt said adhesion layer to enhance its adhesion;
heat treating said adhesion layer to form a heat-treated adhesion layer, said heat-treated adhesion layer having a melting point at a second temperature higher than said first temperature; and
laterally and vertically growing a crystalline, composition over said tiled substrate at a third temperature to form a merged crystal, said third temperature being higher than said first temperature and below said second temperature.
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Abstract
Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.
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Citations
18 Claims
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1. A method for growth of a large-area merged crystal, the method comprising:
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depositing an adhesion layer on a surface of a handle substrate, said adhesion layer having a melting point at a first temperature; bonding at least a first crystal and a second crystal to said adhesion layer to form a tiled substrate while said adhesion layer is at a temperature of no less than said first temperature, to melt said adhesion layer to enhance its adhesion; heat treating said adhesion layer to form a heat-treated adhesion layer, said heat-treated adhesion layer having a melting point at a second temperature higher than said first temperature; and laterally and vertically growing a crystalline, composition over said tiled substrate at a third temperature to form a merged crystal, said third temperature being higher than said first temperature and below said second temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification