×

Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate

  • US 10,400,352 B2
  • Filed: 02/07/2017
  • Issued: 09/03/2019
  • Est. Priority Date: 06/18/2010
  • Status: Active Grant
First Claim
Patent Images

1. A method for growth of a large-area merged crystal, the method comprising:

  • depositing an adhesion layer on a surface of a handle substrate, said adhesion layer having a melting point at a first temperature;

    bonding at least a first crystal and a second crystal to said adhesion layer to form a tiled substrate while said adhesion layer is at a temperature of no less than said first temperature, to melt said adhesion layer to enhance its adhesion;

    heat treating said adhesion layer to form a heat-treated adhesion layer, said heat-treated adhesion layer having a melting point at a second temperature higher than said first temperature; and

    laterally and vertically growing a crystalline, composition over said tiled substrate at a third temperature to form a merged crystal, said third temperature being higher than said first temperature and below said second temperature.

View all claims
  • 4 Assignments
Timeline View
Assignment View
    ×
    ×