Systems and methods utilizing serial configurations of magnetic memory devices
First Claim
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1. An apparatus comprising:
- two or more perpendicular magnetic tunnel junctions (pMTJs), including a first pMTJ having a first magnetic characteristic and a first electrical characteristic and a second pMTJ having a second magnetic characteristic and a second electrical characteristic, wherein;
the first magnetic characteristic is distinct from the second magnetic characteristic;
the first magnetic characteristic is based on a first magnetic anisotropy and a first offset field on a first storage layer of the first pMTJ; and
the second magnetic characteristic is based on a second magnetic anisotropy and a second offset field on a second storage layer of the second pMTJ;
a transistor having three terminals, wherein the first pMTJ is coupled to a first terminal of the three terminals; and
a metallic separator coupling the first pMTJ with the second pMTJ, wherein the first pMTJ and the second pMTJ are arranged in series.
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Abstract
A memory cell apparatus is provided. The apparatus comprises two or more magnetic tunnel junctions (MTJs), including a first MTJ having a first magnetic characteristic and a first electrical characteristic and a second MTJ having a second magnetic characteristic and a second electrical characteristic. The first magnetic characteristic is distinct from the second magnetic characteristic. The apparatus further comprises a transistor having three terminals, where the first MTJ is coupled to a first terminal of the three terminals and a metallic separator coupling the first MTJ with the second MTJ. The first MTJ and the second MTJ are arranged in series.
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Citations
21 Claims
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1. An apparatus comprising:
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two or more perpendicular magnetic tunnel junctions (pMTJs), including a first pMTJ having a first magnetic characteristic and a first electrical characteristic and a second pMTJ having a second magnetic characteristic and a second electrical characteristic, wherein; the first magnetic characteristic is distinct from the second magnetic characteristic; the first magnetic characteristic is based on a first magnetic anisotropy and a first offset field on a first storage layer of the first pMTJ; and the second magnetic characteristic is based on a second magnetic anisotropy and a second offset field on a second storage layer of the second pMTJ; a transistor having three terminals, wherein the first pMTJ is coupled to a first terminal of the three terminals; and a metallic separator coupling the first pMTJ with the second pMTJ, wherein the first pMTJ and the second pMTJ are arranged in series. - View Dependent Claims (2, 8, 9, 10, 11, 13, 14)
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3. An apparatus comprising:
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two or more perpendicular magnetic tunnel junctions (pMTJs), including a first pMTJ having a first magnetic characteristic and a first electrical characteristic and a second pMTJ having a second magnetic characteristic and a second electrical characteristic, wherein; the first magnetic characteristic is distinct from the second magnetic characteristic; the first electrical characteristic of the first pMTJ is a first resistance determined based on a geometric property of the first pMTJ and a Resistance×
Area product (RA product) of the first pMTJ;the second electrical characteristic of the second pMTJ is a second resistance determined based on a geometric property of the second pMTJ and an RA product of the second pMTJ; a transistor having three terminals, wherein the first pMTJ is coupled to a first terminal of the three terminals; and a metallic separator coupling the first pMTJ with the second pMTJ, wherein the first pMTJ and the second pMTJ are arranged in series. - View Dependent Claims (4, 5, 6, 7)
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12. An apparatus comprising:
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two or more perpendicular magnetic tunnel junctions (pMTJs), including a first pMTJ having a first magnetic characteristic and a first electrical characteristic and a second pMTJ having a second magnetic characteristic and a second electrical characteristic, wherein the first magnetic characteristic is distinct from the second magnetic characteristic; a transistor having three terminals, wherein the first pMTJ is coupled to a first terminal of the three terminals; and a metallic separator coupling the first pMTJ with the second pMTJ, wherein; the first pMTJ and the second pMTJ are arranged in series; the first pMTJ is arranged in an offset position from the second pMTJ so as to minimize influence of stray fields between the first and second pMTJs. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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Specification