Methods of operating memory
First Claim
1. A method of operating a memory, comprising:
- applying a first potential to a control gate of a memory cell of a first string of series-connected memory cells connected to a particular data line;
applying a second potential to a control gate of a memory cell of a second string of series-connected memory cells connected to the particular data line while applying the first potential to the control gate of the memory cell of the first string of series-connected memory cells; and
generating a data value indicative of a level of a property sensed from the particular data line while applying the first potential to the control gate of the memory cell of the first string of series-connected memory cells and while applying the second potential to the control gate of the memory cell of the second string of series-connected memory cells, wherein the property is selected from a group consisting of a voltage and a current.
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Abstract
Methods of operating memory include generating a data value indicative of a level of a property sensed from a data line while applying potentials to control gates of memory cells of more than one string of series-connected memory cells connected to that data line. Methods of operating memory further include generating data values indicative of levels of a property sensed from data lines while applying potentials to control gates of memory cells of strings of series-connected memory cells connected to those data lines, performing a logical operation on a set of data values comprising those data values, and determining a potential to be applied to control gates of different memory cells of those strings of series-connected memory cells in response to an output of the logical operation on the set of data values.
41 Citations
20 Claims
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1. A method of operating a memory, comprising:
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applying a first potential to a control gate of a memory cell of a first string of series-connected memory cells connected to a particular data line; applying a second potential to a control gate of a memory cell of a second string of series-connected memory cells connected to the particular data line while applying the first potential to the control gate of the memory cell of the first string of series-connected memory cells; and generating a data value indicative of a level of a property sensed from the particular data line while applying the first potential to the control gate of the memory cell of the first string of series-connected memory cells and while applying the second potential to the control gate of the memory cell of the second string of series-connected memory cells, wherein the property is selected from a group consisting of a voltage and a current. - View Dependent Claims (2, 3)
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4. A method of operating a memory, comprising:
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for each string of series-connected memory cells of a first plurality of strings of series-connected memory cells connected to a first data line, applying a respective potential of a first plurality of potentials to a respective control gate of a memory cell of that string of series-connected memory cells of the first plurality of strings of series-connected memory cells, and generating a first data value indicative of a level of a property sensed from the first data line while applying the respective potentials of the first plurality of potentials to the respective control gates of the memory cells of each string of series-connected memory cells of the first plurality of strings of series-connected memory cells; and for each string of series-connected memory cells of a second plurality of strings of series-connected memory cells connected to a second data line, applying a respective potential of a second plurality of potentials to a respective control gate of a memory cell of that string of series-connected memory cells of the second plurality of strings of series-connected memory cells, and generating a second data value indicative of a level of a property sensed from the second data line while applying the respective potentials of the second plurality of potentials to the respective control gates of the memory cells of each string of series-connected memory cells of the second plurality of strings of series-connected memory cells. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of operating a memory, comprising:
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for each string of series-connected memory cells of a first plurality of strings of series-connected memory cells connected to a first data line, applying a respective potential of a first plurality of potentials to a respective control gate of a memory cell of that string of series-connected memory cells of the first plurality of strings of series-connected memory cells, and generating a first data value indicative of a level of a property sensed from the first data line while applying the respective potentials of the first plurality of potentials to the respective control gates of the memory cells of each string of series-connected memory cells of the first plurality of strings of series-connected memory cells; for each string of series-connected memory cells of a second plurality of strings of series-connected memory cells connected to a second data line, applying a respective potential of a second plurality of potentials to a respective control gate of a memory cell of that string of series-connected memory cells of the second plurality of strings of series-connected memory cells, and generating a second data value indicative of a level of a property sensed from the second data line while applying the respective potentials of the second plurality of potentials to the respective control gates of the memory cells of each string of series-connected memory cells of the second plurality of strings of series-connected memory cells; performing a logical operation on a set of data values comprising the first data value and the second data value; for each string of series-connected memory cells of the first plurality of strings of series-connected memory cells, determining a respective potential of a third plurality of potentials to be applied to a respective control gate of a different memory cell of that string of series-connected memory cells of the first plurality of strings of series-connected memory cells in response to an output of the logical operation on the set of data values; and for each string of series-connected memory cells of the second plurality of strings of series-connected memory cells, determining a respective potential of a fourth plurality of potentials to be applied to a respective control gate of a different memory cell of that string of series-connected memory cells of the second plurality of strings of series-connected memory cells in response to the output of the logical operation on the set of data values. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification