Boron doped tungsten carbide for hardmask applications
First Claim
1. A method of forming a hardmask layer on a substrate comprising:
- forming a seed layer on a substrate by supplying a seed layer gas mixture in a processing chamber;
forming a transition layer comprising tungsten, boron and carbon on the seed layer by supplying a transition layer gas mixture in the processing chamber; and
forming a bulk hardmask layer comprising tungsten, boron and carbon on the transition layer by supplying a main deposition gas mixture in the processing chamber.
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Abstract
Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of hardmask films on a substrate. In one implementation, a method of forming a hardmask layer on a substrate is provided. The method comprises forming a seed layer on a substrate by supplying a seed layer gas mixture in a processing chamber. The method further includes forming a transition layer comprising tungsten, boron and carbon on the seed layer by supplying a transition layer gas mixture in the processing chamber. The method further includes forming a bulk hardmask layer comprising tungsten, boron and carbon on the transition layer by supplying a main deposition gas mixture in the processing chamber.
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Citations
20 Claims
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1. A method of forming a hardmask layer on a substrate comprising:
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forming a seed layer on a substrate by supplying a seed layer gas mixture in a processing chamber; forming a transition layer comprising tungsten, boron and carbon on the seed layer by supplying a transition layer gas mixture in the processing chamber; and forming a bulk hardmask layer comprising tungsten, boron and carbon on the transition layer by supplying a main deposition gas mixture in the processing chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of forming a hardmask layer comprising:
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supplying a gas mixture including at least a boron-based precursor gas and a carbon-based precursor gas onto a surface of a substrate disposed in a processing chamber to form a seed layer on the substrate; ramping down the carbon-based precursor gas and ramping up a tungsten-based precursor gas supplied in the gas mixture while maintaining a steady flow of the boron-based precursor gas into the processing chamber to form a transition layer on the seed layer; and continuously supplying the tungsten-based precursor gas in the gas mixture until the tungsten-based precursor gas reaches a predetermined flow rate and maintaining the tungsten-based precursor gas at a steady predetermined flow rate to form a bulk hardmask layer. - View Dependent Claims (16, 17)
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18. A hardmask layer, comprising:
a seed layer, a transition layer and a bulk hardmask layer disposed on the transition layer, wherein the seed layer is a boron carbide layer, the transition layer is a gradient tungsten boron carbide layer and the bulk hardmask layer is a tungsten boron carbide layer. - View Dependent Claims (19, 20)
Specification