Shaped etch profile with oxidation
First Claim
1. An etching method comprising:
- oxidizing an exposed silicon surface on a semiconductor substrate within a processing region of a semiconductor processing chamber;
forming an inert plasma within the processing region of the semiconductor processing chamber;
damaging at least part of the oxidized silicon with effluents of the inert plasma;
forming a remote plasma from a fluorine-containing precursor to produce plasma effluents;
flowing the plasma effluents to the processing region of the semiconductor processing chamber;
removing the damaged oxidized silicon from the semiconductor substrate; and
isotropically etching a silicon-containing material from the semiconductor substrate.
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Accused Products
Abstract
Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. The methods may include forming an inert plasma within the processing region of the processing chamber. Effluents of the inert plasma may be utilized to modify the oxidized silicon. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified oxidized silicon from the semiconductor substrate. The methods may include isotropically etching a silicon-containing material from the semiconductor substrate.
1783 Citations
17 Claims
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1. An etching method comprising:
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oxidizing an exposed silicon surface on a semiconductor substrate within a processing region of a semiconductor processing chamber; forming an inert plasma within the processing region of the semiconductor processing chamber; damaging at least part of the oxidized silicon with effluents of the inert plasma; forming a remote plasma from a fluorine-containing precursor to produce plasma effluents; flowing the plasma effluents to the processing region of the semiconductor processing chamber; removing the damaged oxidized silicon from the semiconductor substrate; and isotropically etching a silicon-containing material from the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. An etching method comprising:
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oxidizing an exposed silicon surface on a semiconductor substrate within a processing region of a semiconductor processing chamber to produce a region of silicon oxide; forming an inert plasma within a processing region of a semiconductor processing chamber; damaging at least a portion of the region of silicon oxide with effluents of the inert plasma; contacting the damaged silicon oxide with plasma effluents of a first fluorine-containing precursor to remove silicon oxide; exposing silicon beneath the silicon oxide; and etching the silicon with plasma effluents of a second fluorine-containing precursor, wherein the oxidizing, damaging, contacting, and etching are all performed in the semiconductor processing chamber. - View Dependent Claims (13, 14, 15, 16, 17)
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Specification