Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system

• US 10,403,535 B2
• Filed: 08/12/2015
• Issued: 09/03/2019
• Est. Priority Date: 08/15/2014
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ye, Zheng John, Pinson, II, Jay D., Hanawa, Hiroji, Zhou, Jianhua, Lin, Xing, Duan, Ren-Guan, Lee, Kwangduk Douglas, Kim, Bok Hoen, Behera, Swayambhu P., Ha, Sungwon, Balasubramanian, Ganesh, Rocha-Alvarez, Juan Carlos, Kulshreshtha, Prashant Kumar, Foster, Jason K., Srinivasan, Mukund, Haller, Uwe P., Ponnekanti, Hari K.
• Primary Examiner(s): Comber, Kevin J
• Application Number:
  US14/824,229
• Publication Number:
  US 20160049323A1
• Time in Patent Office: 1,483 Days
• Field of Search: 361234
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: H01L 21/68757 characterised by a coating or a hardness or a material
• CPC Class Codes: H02N 13/00 Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Abstract

Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×10⁷ ohm-cm to about 1×10¹⁵ ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.

Claims

1. An electrostatic chuck, comprising:

a chuck body comprising aluminum nitride, between 3 ppm and 48 ppm silicon (Si), between 2 ppm and 16 ppm iron (Fe), between 5 ppm and 225 ppm calcium (Ca), and between 0.01 ppm and 805 ppm yttrium (Y), the chuck body having a volume resistivity value of 1×

10⁹ ohm-cm to 1×

10¹² ohm-cm in a temperature range of 450°

C. to 650°

C., and a bulk density in the range of from 3.15 q/cc to 3.45 q/cc;

an insulating layer deposited on the chuck body to form a substrate supporting surface;

a support stem extending from the chuck body opposite the substrate supporting surface; and

an electrode embedded in and surrounded by the chuck body.

2. The electrostatic chuck of claim 1, wherein the chuck body has a heat conductivity value between 60 W/m-K and 190 W/m-K.

3. The electrostatic chuck of claim 1, wherein the substrate supporting surface of the chuck body further comprises:

a plurality of square-shaped protrusions each having a length of 0.05 mm to 5 mm and a width of 0.05 mm to 5 mm.

4. The electrostatic chuck of claim 1, wherein the chuck body has a relative dielectric constant of 8 to 10.

5. The electrostatic chuck of claim 1, wherein the chuck body further comprises Mg, K, Na, Cr, Mn, Ni, Cu, and Zn.

6. The electrostatic chuck of claim 1, wherein the chuck body further comprises Na and Cr.

7. The electrostatic chuck of claim 6, wherein the content of Na is between 0.01 ppm and 5.4 ppm and the content of Cr is between 0.01 ppm and 3 ppm.

8. The electrostatic chuck of claim 6, wherein the chuck body further comprises Mg, K, Mn, Ni, Cu and Zn, and the content of each Mg, K, Mn, Ni, Cu and Zn is less than 1 ppm.

9. The electrostatic chuck of claim 1, wherein the insulating layer comprises a dielectric material or a ceramic material.

10. The electrostatic chuck of claim 9, wherein the insulating layer comprises yttrium oxide, yttrium-aluminum-garnet, or aluminum oxide silicon magnesium yttrium.

11. The electrostatic chuck of claim 1, wherein a peripheral edge and a bottom surface of the chuck body are coated with an insulating layer made of a dielectric material or a ceramic material.

12. The electrostatic chuck of claim 1, wherein the chuck body comprises aluminum nitride, Mg, and Na, wherein a content of the Na is between 0.01 ppm and 0.9 ppm.

13. An electrostatic chuck, comprising:

a chuck body having a substrate supporting surface, wherein the chuck body has a volume resistivity value of 1×

10⁹ ohm-cm to 1×

10¹² ohm-cm in a temperature range of 450°

C. to 650°

C., a bulk density in the range of from 3.15 g/cc to 3.45 g/cc, and a heat conductivity value between 60 W/m-K and 190 W/m-K, and wherein the chuck body is composed of aluminum nitride and further comprises Si, Fe, Ca, and Y, and the content of Si is between 3 ppm and 48 ppm, the content of Fe is between 2 ppm and 16 ppm, the content of Ca is between 5 ppm and 225 ppm, and the content of Y is between 0.01 ppm and 805 ppm;

a support stem extending from the chuck body opposite the substrate supporting surface; and

an electrode embedded in and surrounded by the chuck body.

14. An electrostatic chuck, comprising:

an aluminum nitride body having a substrate supporting surface, the aluminum nitride body comprising between 3 ppm and 48 ppm silicon (Si), between 2 ppm and 16 ppm iron (Fe), between 5 ppm and 225 ppm calcium (Ca), and between 0.01 ppm and 805 ppm yttrium (Y), wherein the aluminum nitride body has a volume resistivity value of 1×

10⁹ ohm-cm to 1×

10¹² ohm-cm in a temperature range of 450°

C. to 650°

C. and a bulk density in the range of from 3.15 g/cc to 3.45 g/cc;

an insulating layer deposited over at least a peripheral edge of the substrate supporting surface; and

an electrode embedded in and surrounded by the aluminum nitride body.

15. The electrostatic chuck of claim 14, wherein the aluminum nitride body has a heat conductivity value 170 W/m-K.

16. The electrostatic chuck of claim 14, wherein the aluminum nitride body further comprises Mg, K, Mn, Ni, Cu and Zn.

17. The electrostatic chuck of claim 14, wherein the insulating layer comprises silicon oxide, quartz, glass, aluminum oxide, silicon nitride, yttrium oxide, yttrium-aluminum-garnet, titanium oxide, titanium nitride, silicon carbide, aluminum oxide silicon magnesium yttrium, magnesium oxide, zirconia, titanium carbide, boron carbide, or boron nitride.