×

Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system

  • US 10,403,535 B2
  • Filed: 08/12/2015
  • Issued: 09/03/2019
  • Est. Priority Date: 08/15/2014
  • Status: Active Grant
First Claim
Patent Images

1. An electrostatic chuck, comprising:

  • a chuck body comprising aluminum nitride, between 3 ppm and 48 ppm silicon (Si), between 2 ppm and 16 ppm iron (Fe), between 5 ppm and 225 ppm calcium (Ca), and between 0.01 ppm and 805 ppm yttrium (Y), the chuck body having a volume resistivity value of 1×

    109 ohm-cm to 1×

    1012 ohm-cm in a temperature range of 450°

    C. to 650°

    C., and a bulk density in the range of from 3.15 q/cc to 3.45 q/cc;

    an insulating layer deposited on the chuck body to form a substrate supporting surface;

    a support stem extending from the chuck body opposite the substrate supporting surface; and

    an electrode embedded in and surrounded by the chuck body.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×