Wavelength converting material deposition methods and associated articles

• US 10,403,785 B2
• Filed: 09/28/2015
• Issued: 09/03/2019
• Est. Priority Date: 08/24/2012
• Status: Active Grant

• Current Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Original Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Inventors: Miller, Harris, Duncan, Scott W., Dan, Budhadipta
• Primary Examiner(s): Ahmadi, Mohsen
• Application Number:
  US14/867,952
• Publication Number:
  US 20160155890A1
• Time in Patent Office: 1,436 Days
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

Systems and methods related to the arrangement of regions containing wavelength-converting materials, and associated articles, are provided.

Claims

1. A method, comprising:

providing a substrate over which a mask material and a wavelength-converting material are positioned, wherein;

the mask material covers only an electrical contact on an exterior surface of the substrate,

the mask material does not cover portions of the exterior surface of the substrate that do not include the electric contact formed thereon, and

the wavelength-converting material is positioned over the mask material and the portions of the exterior surface of the substrate that do not include the electrical contact formed thereon;

removing a portion of the wavelength-converting material such that wavelength-converting material is no longer positioned over an entire top surface of the mask material and at least a portion of the wavelength-converting material remains positioned over the portions of the exterior surface of the substrate that do not include the electrical contact formed thereon, wherein removing the portion of the wavelength-converting material comprises grinding the wavelength-converting material, wherein a thickness of a first section of the wavelength-converting material is thinner than a thickness of a second section of the wavelength-converting material after the removing the portion of the wavelength-converting material; and

partially removing at least a portion of the mask material and a second portion of the wavelength-converting material to form a substantially planar surface across the mask material and the wavelength-converting material.

2. The method of claim 1, comprising forming the mask material over the substrate.

3. The method of claim 2, comprising, after forming the mask material over the substrate, removing at least a portion of the mask material from the substrate such that the mask material does not cover the second portion of the exterior surface of the substrate.

4. The method of claim 1, comprising forming the wavelength-converting material over the mask material and the second portion of the exterior surface of the substrate.

5. The method of claim 1, wherein removing the portion of the wavelength-converting material comprises forming a substantially planar surface across the wavelength-converting material and the mask material.

6. The method of claim 1, wherein the mask material comprises a polymer.

7. The method of claim 1, wherein the mask material comprises a photoresist.

8. The method of claim 1, wherein the wavelength-converting material comprises at least one phosphor.

9. The method of claim 1, wherein removing at least a portion of the mask material exposes a surface of an electrically conductive material underneath the mask material.

10. The method of claim 1, wherein the substrate comprises a light-emitting device.

11. The method of claim 10, wherein the light-emitting device comprises a light-emitting diode.

12. The method of claim 10, wherein the light-emitting device has an edge having a length of at least about 1 mm.

13. The method of claim 10, wherein the exterior surface corresponds to an emission surface of the light-emitting device, and at least about 75% of the light that is emitted by the light-emitting device is emitted through the exterior surface.

14. The method of claim 1, wherein substantially none of the electrical contact is covered by the wavelength-converting material.

15. The method of claim 1, wherein the exterior surface is part of a semiconductor layer.

16. The method of claim 15, wherein the semiconductor layer comprises an n-doped semiconductor layer.