Light emitting device and method of fabricating the same

• US 10,403,796 B2
• Filed: 10/15/2015
• Issued: 09/03/2019
• Est. Priority Date: 10/21/2014
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Kim, Chang Yeon, Park, Ju Yong, Son, Sung Su
• Primary Examiner(s): McCall-Shepard, Sonya D.
• Application Number:
  US15/520,813
• Publication Number:
  US 20180309029A1
• Time in Patent Office: 1,419 Days
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer, and a partially exposed region of an upper surface of the first conductive type semiconductor layer; a transparent electrode disposed on the second conductive type semiconductor layer; a first insulation layer including a first opening and a second opening; a metal layer at least partially covering the first insulation layer; a first electrode electrically connected to the first conductive type semiconductor layer; and a second electrode electrically connected to the transparent electrode.

Claims

1. A light emitting device comprising:

a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer, and an active layer disposed between the first and second conductive type semiconductor layers, the first conductive type semiconductor layer having an upper surface with a partially exposed region;

a transparent electrode disposed on the second conductive type semiconductor layer and forming ohmic contact with the second conductive type semiconductor layer;

a first insulation layer covering the light emitting structure and the transparent electrode, and including a first opening and a second opening exposing the partially exposed region of the upper surface of the first conductive type semiconductor layer and a portion of the transparent electrode, respectively;

a current blocking layer disposed a region of the second conductive type semiconductor layer;

a first metal layer forming ohmic contact with the first conductive type semiconductor layer through the first opening and extending from the first opening to a region on the insulation layer above the upper surface of the second conductive type semiconductor layer;

a second metal layer contacting the transparent electrode through the second opening;

a first electrode electrically connected to the first conductive type semiconductor layer; and

a second electrode electrically connected to the transparent electrode;

wherein the first metal layer and the second metal layer are separated from each other.

2. The light emitting device of claim 1, wherein a portion in which the transparent electrode, the first insulation layer and the metal layer are stacked provides an omnidirectional reflector.

3. The light emitting device of claim 1, wherein the transparent electrode includes a conductive oxide, the insulation layer includes a silicon oxide or a silicon nitride, and the metal layer includes a light-reflective metal.

4. The light emitting device of claim 3, wherein the transparent electrode includes indium tin oxide (ITO), the insulation layer includes a silicon dioxide (SiO₂), and the metal layer includes Ag and/or Al.

5. The light emitting device of claim 1, further including:

a contact electrode disposed on the partially exposed region of the upper surface of the first conductive type semiconductor layer,

wherein the contact electrode includes a same material as the transparent electrode.

6. The light emitting device of claim 1, further including:

a second insulation layer covering the metal layer,

wherein the second insulation layer includes a third opening exposing the first metal layer and a fourth opening exposing the second metal layer.

7. The light emitting device of claim 1, wherein the first and second electrodes are disposed on the light emitting structure.

8. The light emitting device of claim 7, further including:

an insulation unit at least partially covering side surfaces of the first electrode and the second electrode and disposed between the first and second electrodes.

9. The light emitting device of claim 1, wherein the transparent electrode covers an overall upper surface of the second conductive type semiconductor layer.

10. The light emitting device of claim 1, wherein the first insulation layer and the metal layer further cover at least a portion of a side surface of the light emitting structure.

11. The light emitting device of claim 1, further including:

a wavelength conversion layer disposed under a lower surface of the light emitting structure such that the wavelength conversion layer is disposed opposite to the transparent electrode.

12. The light emitting device of claim 1, further including:

a second insulation layer covering the metal layer and including a third opening exposing a region corresponding to the first opening,

wherein the first electrode is disposed on the second insulation layer.

13. The light emitting device of claim 1, wherein the partially exposed region of the upper surface of the first conductive type semiconductor layer is formed in a hole shape passing through the second conductive type semiconductor layer and the active layer, and the light emitting structure includes at least one hole passing through the second conductive type semiconductor layer and the active layer.

14. The light emitting device of claim 1, wherein the light emitting structure includes at least one mesa including the second conductive type semiconductor layer and the active layer, and the at least one mesa is not formed over the partially exposed region of the upper surface of the first conductive type semiconductor layer.

15. The light emitting device of claim 1, wherein the first insulation layer includes a plurality of nano-rods separated from one another or a plurality of nano-holes separated from one another.

16. A light emitting device comprising:

a light emitting structure including a first conductive type semiconductor layer, an active layer formed over the first conductive type semiconductor layer, and a second conductive type semiconductor layer formed over the active layer, wherein the light emitting structure has an opening passing through the active layer and the second conductive type semiconductor layer and having an inclined side surface;

a current blocking layer disposed on a first region of the second conductive type semiconductor layer;

a transparent layer formed over a second region of the second conductive type semiconductor layer;

a first metal layer disposed over the light emitting structure and connected to the first electrode;

a second metal layer disposed over the light emitting structure and connected to the second electrode;

a first electrode formed over the transparent layer and electrically connected to the first conductive type semiconductor layer through the opening; and

a second electrode formed over the transparent layer and electrically connected to the transparent layer.

17. The light emitting device of claim 16, wherein the first metal layer includes a portion directly contacting to the first conductive type semiconductor layer through the opening.

18. The light emitting device of claim 16, wherein the light emitting structure includes roughness formed on a surface of the first conductive type semiconductor layer, the surface being opposite to the opening of the light emitting structure.

19. A light emitting device comprising:

a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer, and an active layer disposed between the first and second conductive type semiconductor layers, the first conductive type semiconductor layer having an upper surface with a partially exposed region;

a transparent electrode disposed on the second conductive type semiconductor layer and forming ohmic contact with the second conductive type semiconductor layer;

a first insulation layer covering the light emitting structure and the transparent electrode, and including a first opening and a second opening exposing the partially exposed region of the upper surface of the first conductive type semiconductor layer and a portion of the transparent electrode, respectively;

a current blocking layer disposed a region of the second conductive type semiconductor layer;

a metal layer at least partially covering the first insulation layer and including a portion disposed above an upper surface of the second conductive type semiconductor layer;

a first electrode electrically connected to the first conductive type semiconductor layer; and

a second electrode electrically connected to the transparent electrode;

a second insulation layer covering the metal layer and including a third opening exposing a region corresponding to the first opening,

wherein the first electrode is disposed on the second insulation layer.

20. A light emitting device comprising:

a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer, and an active layer disposed between the first and second conductive type semiconductor layers, the first conductive type semiconductor layer having an upper surface with a partially exposed region;

a transparent electrode disposed on the second conductive type semiconductor layer and forming ohmic contact with the second conductive type semiconductor layer;

a first insulation layer covering the light emitting structure and the transparent electrode, and including a first opening and a second opening exposing the partially exposed region of the upper surface of the first conductive type semiconductor layer and a portion of the transparent electrode, respectively;

a current blocking layer disposed a region of the second conductive type semiconductor layer;

a metal layer at least partially covering the first insulation layer and including a portion disposed above an upper surface of the second conductive type semiconductor layer;

a first electrode electrically connected to the first conductive type semiconductor layer; and

a second electrode electrically connected to the transparent electrode;

wherein the partially exposed region of the upper surface of the first conductive type semiconductor layer is formed in a hole shape passing through the second conductive type semiconductor layer and the active layer, and the light emitting structure includes at least one hole passing through the second conductive type semiconductor layer and the active layer.

21. A light emitting device comprising:

a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer, and an active layer disposed between the first and second conductive type semiconductor layers, the first conductive type semiconductor layer having an upper surface with a partially exposed region;

a transparent electrode disposed on the second conductive type semiconductor layer and forming ohmic contact with the second conductive type semiconductor layer;

a first insulation layer covering the light emitting structure and the transparent electrode, and including a first opening and a second opening exposing the partially exposed region of the upper surface of the first conductive type semiconductor layer and a portion of the transparent electrode, respectively;

a current blocking layer disposed a region of the second conductive type semiconductor layer;

a metal layer at least partially covering the first insulation layer and including a portion disposed above an upper surface of the second conductive type semiconductor layer;

a first electrode electrically connected to the first conductive type semiconductor layer; and

a second electrode electrically connected to the transparent electrode;

wherein the light emitting structure includes at least one mesa including the second conductive type semiconductor layer and the active layer, and the at least one mesa is not formed over the partially exposed region of the upper surface of the first conductive type semiconductor layer.