3D MEMS device with hermetic cavity

• US 10,407,299 B2
• Filed: 01/14/2016
• Issued: 09/10/2019
• Est. Priority Date: 01/15/2015
• Status: Active Grant

• Current Assignee: Motion Engine inc
• Original Assignee: Motion Engine inc
• Inventors: Boysel, Robert Mark
• Primary Examiner(s): Vu, David
• Assistant Examiner(s): Fox, Brandon C
• Application Number:
  US15/543,700
• Publication Number:
  US 20180002163A1
• Time in Patent Office: 1,335 Days
• Field of Search: 257415
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0242 Gyroscopes
• CPC Class Codes: B81B 2203/0315 Cavities
• CPC Class Codes: B81B 2207/095 through the lid
• CPC Class Codes: B81B 7/007 Interconnections between the MEMS and external electrical signals
• CPC Class Codes: B81C 1/00301 Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
• CPC Class Codes: B81C 2201/013 Etching
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: G01C 19/5783 Mountings or housings not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
• CPC Class Codes: G01C 21/166 Mechanical, construction or arrangement details of inertial navigation systems

Abstract

A three dimensional (3D) micro-electro-mechanical system (MEMS) device is provided. The device comprises a central MEMS wafer, and top and bottom cap wafers. The MEMS wafer includes a MEMS structure, such as an inertial sensor. The 5 top cap wafer, the bottom cap wafer and the MEMS wafers are stacked along a stacking axis and together form at least one hermetic cavity enclosing the MEMS structure. At least one of the top cap wafer and the bottom cap wafer is a silicon-on- insulator (SOI) cap wafer comprising a cap device layer, a cap handle layer and a cap insulating layer interposed between the cap device layer and the cap handle layer. At 10 least one electrically conductive path extends through the SOI cap wafer, establishing an electrical convection between an outer electrical contact provided on the SOI cap wafer and the MEMS structure.

Claims

1. A three dimensional (3D) micro-electro-mechanical system (MEMS) device comprising:

a MEMS wafer including a MEMS structure, the MEMS wafer having opposed first and second sides;

a top cap wafer and a bottom cap wafer respectively bonded to the first side and the second side of the MEMS wafer, the top cap wafer, the bottom cap wafer and the MEMS wafer being stacked along a stacking axis and together forming at least one hermetic cavity enclosing the MEMS structure, at least one of the top cap wafer and the bottom cap wafer being a silicon-on-insulator (SOI) cap wafer comprising a cap device layer, a cap handle layer and a cap insulating layer interposed between the cap device layer and the cap handle layer, one of the cap handle layer and of the cap device layer having an inner side bonded to the MEMS wafer, and the other one of the cap handle layer and of the cap device layer having an outer side with outer electrical contacts formed thereon; and

an electrically conductive path extending through the cap handle layer and through the cap device layer of the SOI cap wafer and comprising a conducting shunt formed through the cap insulating layer, the electrically conductive path establishing an electrical connection between one of the outer electrical contacts and said at least one MEMS structure and electrically connecting the cap handle layer and the cap device layer.

2. The 3D MEMS device of claim 1, wherein said electrically conductive path comprises a post formed in the cap handle layer, the post being delineated by a closed-loop trench patterned through an entire thickness of the cap handle layer, said one of the outer electrical contacts being located on top of said post.

3. The 3D MEMS device of claim 2, wherein said electrically conductive path comprises a pad formed in the cap device layer, the pad being delineated by a trench patterned through an entire thickness of the cap device layer, the pad being aligned along the stacking axis with said post.

4. The 3D MEMS device according to claim 1, wherein the MEMS wafer is an SOI MEMS wafer comprising a MEMS device layer bonded to the top cap wafer, a MEMS handle layer bonded to the bottom cap wafer, and a MEMS insulating layer interposed between the MEMS device layer and the MEMS handle layer.

5. The 3D MEMS device of claim 4, wherein said electrically conductive path comprises a pad formed in the MEMS device layer, delineated by a trench, the pad being electrically connected to the MEMS structure, the pad formed in the MEMS device layer being aligned along the stacking axis with a pad formed in the cap device layer.

6. The 3D MEMS device of claim 5, wherein the MEMS wafer comprises an outer frame, the MEMS structure comprising at least one proof mass suspended by springs, the at least one proof mass being patterned in both the MEMS handle and device layers, the springs being patterned in the MEMS device layer, the at least one proof mass including conductive shunts electrically connecting the MEMS device and handle layers, the electrically conductive path connecting said one of the electrical contacts to the MEMS structure via at least one of the springs.

7. The 3D MEMS device according to claim 1, wherein the cap device layer comprises cap electrodes patterned therein, the 3D MEMS device comprising additional electrically conducting paths extending through the cap handle layer and the cap device layer, at least one of said additional electrically conducting paths establishing an electrical connection between a subset of the electrical contacts and said cap electrodes.

8. The 3D MEMS device of claim 7, wherein the cap device layer comprises leads patterned therein, the leads being electrically connected to the cap electrodes, the leads extending orthogonally to the stacking axis and forming part of corresponding ones of said additional electrically conducting paths.

9. The 3D MEMS device according to claim 1, comprising a device feedthrough extending along the stacking axis, the device feedthrough comprising a cap feedthrough and a MEMS feedthrough aligned with one another, wherein the cap feedthrough comprises:

a cap feedthrough post patterned through the entire thickness of the cap handle layer, the cap feedthrough post being electrically connected to one of the outer electrical contacts;

a cap feedthrough pad patterned through the entire thickness of the cap device layer; and

a conductive shunt formed through the cap insulating layer, electrically connecting the cap feedthrough post and the cap feedthrough pad;

wherein the MEMS wafer is an SOI MEMS wafer comprising a MEMS device layer bonded to the top cap wafer, a MEMS handle layer bonded to the bottom cap wafer, and a MEMS insulating layer interposed between the MEMS device layer and the MEMS handle layer, the MEMS feedthrough comprising;

a MEMS feedthrough post patterned through an entire thickness of the MEMS handle layer;

a MEMS feedthrough pad patterned through an entire thickness of the MEMS device layer; and

a conductive shunt formed through the MEMS insulating layer, electrically connecting the MEMS feedthrough post and the MEMS feedthrough pad, thereby establishing an electrical connection between said one of the outer electrical contacts on top of the cap feedthrough post and the MEMS feedthrough, through the cap feedthrough.

10. The 3D MEMS device of claim 9, wherein trenches delineating posts in at least one of the SOI cap wafer and the SOI MEMS wafer are left unfilled.

11. The 3D MEMS device of claim 9, wherein the cap feedthrough post and the MEMS feedthrough post have respective cross-sections taken orthogonally with respect to the stacking axis, said cross-sections being of different sizes.

12. The 3D MEMS device of claim 9, wherein the device feedthrough comprises a bond pad on the outer side of the SOI cap wafer, electrically connected to said cap feedthrough post.

13. The 3D MEMS device according to claim 9, wherein both the top and the bottom cap wafers are SOI wafers.

14. The 3D MEMS device of claim 13, wherein the cap feedthrough is a top cap feedthrough formed in the top cap wafer, and the bottom cap wafer comprises a bottom cap feedthrough aligned and electrically connected to the top cap feedthrough via the MEMS feedthrough.

15. The 3D MEMS device of claim 13, wherein the cap electrodes comprise top cap electrodes formed in the device layer of the top cap wafer, and bottom cap electrodes formed in the device layer of the bottom cap wafer.

16. The 3D MEMS device according to claim 1, wherein the cap device layer is a single crystal silicon layer.

17. The 3D MEMS device according to claim 1, wherein the cap handle layer has a thickness between 100 micrometers and 800 micrometers.

18. The 3D MEMS device according to claim 1, wherein the hermetic cavity enclosing the MEMS structure is a first cavity and wherein the MEMS structure is a first MEMS structure, the 3D MEMS device comprising at least a second cavity enclosing at least a second MEMS structure, said first and second cavities having different internal pressures.

19. The 3D MEMS device of claim 18, further comprising a vent extending through one of the top and bottom cap wafers, the vent defining a gas communication path between the second cavity and an exterior of the MEMS device.

20. The 3D MEMS device of claim 18, wherein the first cavity is a hermetically sealed vacuum cavity.