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Gas supplying method and semiconductor manufacturing apparatus

  • US 10,410,840 B2
  • Filed: 02/05/2015
  • Issued: 09/10/2019
  • Est. Priority Date: 02/12/2014
  • Status: Active Grant
First Claim
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1. A gas supplying method of supplying a process gas containing a gas of at least one gaseous species into a process space in a semiconductor manufacturing apparatus, the gas supplying method comprising:

  • a first step of supplying the process gas containing the gas by controlling a flow rate value of the gas to be a first flow rate value during a first period;

    a second step of supplying the process gas containing the gas by controlling the flow rate value of the gas to be a second flow rate value smaller than the first flow rate value during a second period;

    a third step of supplying the process gas containing the gas by controlling the flow rate value of the gas to be a third flow rate value greater than the first flow rate value during a third period; and

    a fourth step of supplying the process gas containing the gas by controlling the flow rate value of the gas to be a fourth flow rate value smaller than the second flow rate value during a fourth period,wherein one cycle, which has only four periods of the first period, the second period, the third period, and the fourth period corresponding to the first step, the second step, the third step, and the fourth step in a predetermined order, is periodically repeated, andwherein the predetermined order in the one cycle is thatthe fourth step is immediately before the second step,the third step is immediately before the first step, andthe second step is before the first step.

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