Light-emitting display device having oxide semiconductor layer overlapping with adjacent pixel electrode
First Claim
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1. A display device comprising:
- a first scan line;
a second scan line;
a signal line;
a first pixel comprising a first transistor, a first pixel electrode, and a part of the first scan line; and
a second pixel adjacent to the first pixel, comprising a second transistor, a second pixel electrode, and a part of the second scan line,wherein, in the first transistor, a gate is electrically connected to the first scan line, and one of a source and a drain is electrically connected to the signal line,wherein, in the second transistor, a gate is electrically connected to the second scan line, and one of a source and a drain is electrically connected to the signal line,wherein the first transistor comprises an oxide semiconductor layer, the oxide semiconductor layer being over the first scan line with a gate insulating film therebetween, andwherein the oxide semiconductor layer extends across a side edge of the first scan line, overlaps with the second pixel electrode, and does not overlap with the first pixel electrode.
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Abstract
An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.
208 Citations
15 Claims
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1. A display device comprising:
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a first scan line; a second scan line; a signal line; a first pixel comprising a first transistor, a first pixel electrode, and a part of the first scan line; and a second pixel adjacent to the first pixel, comprising a second transistor, a second pixel electrode, and a part of the second scan line, wherein, in the first transistor, a gate is electrically connected to the first scan line, and one of a source and a drain is electrically connected to the signal line, wherein, in the second transistor, a gate is electrically connected to the second scan line, and one of a source and a drain is electrically connected to the signal line, wherein the first transistor comprises an oxide semiconductor layer, the oxide semiconductor layer being over the first scan line with a gate insulating film therebetween, and wherein the oxide semiconductor layer extends across a side edge of the first scan line, overlaps with the second pixel electrode, and does not overlap with the first pixel electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A display device comprising:
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a first scan line; a second scan line; a signal line; a first pixel comprising a first transistor, a second transistor, a first pixel electrode, a light-emitting layer, and a part of the first scan line; and a second pixel adjacent to the first pixel, comprising a third transistor, a second pixel electrode, and a part of the second scan line, wherein, in the first transistor, a gate is electrically connected to the first scan line, and one of a source and a drain is electrically connected to the signal line, wherein, in the second transistor, a gate is electrically connected to one of the source and the drain of the first transistor, and one of a source and a drain is electrically connected to the first pixel electrode, wherein, in the third transistor, a gate is electrically connected to the second scan line, and one of a source and a drain is electrically connected to the signal line, wherein the light-emitting layer is electrically connected to the first pixel electrode, wherein the first transistor comprises an oxide semiconductor layer, the oxide semiconductor layer being over the first scan line with a gate insulating film therebetween, and wherein the oxide semiconductor layer extends across a side edge of the first scan line, overlaps with the second pixel electrode, and does not overlap with the first pixel electrode. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsArasawa, Ryo, Shishido, Hideaki
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Primary Examiner(s)Nguyen, Khiem D
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Application NumberUS15/131,119Publication NumberTime in Patent Office1,240 DaysField of SearchUS Class CurrentCPC Class CodesH01L 27/1225 with semiconductor material...H01L 27/124 with a particular compositi...H01L 33/16 with a particular crystal s...
