Substrate mounted inverter device

• US 10,411,609 B2
• Filed: 12/03/2018
• Issued: 09/10/2019
• Est. Priority Date: 12/22/2017
• Status: Active Grant

• Current Assignee: PANASONIC AUTOMOTIVE SYSTEMS CO., LTD. (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Intellectual Property Management Co., Ltd. (Panasonic Holdings Corporation)
• Inventors: Yukawa, Junichi, Maeda, Yoshihiko, Okawa, Satoshi
• Primary Examiner(s): Torres-Rivera, Alex
• Application Number:
  US16/207,245
• Publication Number:
  US 20190199224A1
• Time in Patent Office: 281 Days
• Field of Search: 363137, 363141, 363146, 363147, 361715-721, 361728-730, 361736
• CPC Class Codes: H02M 3/156 with automatic control of output voltage or current, e.g. switching regulators
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H02M 7/53875 with analogue control of three-phase output
• CPC Class Codes: H03K 17/04123 in field-effect transistor switches
• CPC Class Codes: H03K 17/127 in composite switches
• CPC Class Codes: H03K 17/687 the devices being field-effect transistors
• CPC Class Codes: H03K 2017/0806 against excessive temperature

Abstract

The present disclosure reduces heat concentration on switching elements. A plurality of high-side transistors are connected in parallel to constitute high-side switching element. A plurality of low-side transistors are connected in parallel to constitute low-side switching element. The plurality of high-side transistors are arranged, one by one, next to the plurality of low-side transistors.

Claims

1. A switching power supply device including a high-side switching element and a low-side switching element, the low-side switching element being connected in series to the high-side switching element, the switching power supply device comprising:

a substrate having an insulating layer and a conductive layer, the conductive layer being on one surface of the insulating layer;

a plurality of high-side transistors on the conductive layer, the high-side transistors being connected in parallel to constitute the high-side switching element;

a plurality of low-side transistors on the conductive layer, the low-side transistors being connected in parallel to constitute the low-side switching element; and

a smoothing capacitor section on the conductive layer,

wherein the plurality of high-side transistors is arranged, one by one, next to the plurality of low-side transistors in a first direction,

the smoothing capacitor section includes a plurality of capacitors on the conductive layer, the plurality of capacitors corresponding to the plurality of high-side transistors and the plurality of low-side transistors,

each of the plurality of capacitors is disposed next to a corresponding transistor in a second direction orthogonal to the first direction, the corresponding transistor being one of the plurality of high-side transistors and the plurality of low-side transistors.

2. The switching power supply device according to claim 1, wherein

an output pattern, a power supply pattern, and a ground pattern are in the conductive layer,

the plurality of high-side transistors is electrically connected to the output pattern and to the power supply pattern,

the plurality of low-side transistors is electrically connected to the output pattern and to the ground pattern, and

at least one of the power supply pattern or the ground pattern has a continuous annular path.

3. A switching power supply device including a high-side switching element and a low-side switching element, the low-side switching element being connected in series to the high-side switching element, the switching power supply device comprising:

a substrate having an insulating layer and a conductive layer, the conductive layer being on one surface of the insulating layer;

a plurality of high-side transistors on the conductive layer, the high-side transistors being connected in parallel to constitute the high-side switching element;

a plurality of low-side transistors on the conductive layer, the low-side transistors being connected in parallel to constitute the low-side switching element; and

a smoothing capacitor section on the conductive layer,

wherein the plurality of high-side transistors is arranged, one by one, next to the plurality of low-side transistors,

the smoothing capacitor section includes a plurality of capacitors on the conductive layer, the plurality of capacitors corresponding to the plurality of high-side transistors and the plurality of low-side transistors,

each of the plurality of capacitors is disposed next to a corresponding transistor, the corresponding transistor being one of the plurality of high-side transistors and the plurality of low-side transistors, and

the plurality of high-side transistors, the plurality of low-side transistors, and the plurality of capacitors are disposed such that a pair including one of the plurality of high-side transistors and a corresponding one of the plurality of capacitors is respectively positioned next to a pair including one of the plurality of low-side transistors and the corresponding one of the plurality of capacitors.

4. The switching power supply device according to claim 3, wherein

an output pattern, a power supply pattern, and a ground pattern are in the conductive layer,

the plurality of high-side transistors is electrically connected to the output pattern and to the power supply pattern,

the plurality of low-side transistors is electrically connected to the output pattern and to the ground pattern, and

at least one of the power supply pattern or the ground pattern has a continuous annular path.

5. A switching power supply device including a high-side switching element and a low-side switching element, the low-side switching element being connected in series to the high-side switching element, the switching power supply device comprising:

a substrate having an insulating layer and a conductive layer, the conductive layer being on one surface of the insulating layer;

a plurality of high-side transistors on the conductive layer, the high-side transistors being connected in parallel to constitute the high-side switching element; and

a plurality of low-side transistors on the conductive layer, the low-side transistors being connected in parallel to constitute the low-side switching element;

wherein the plurality of high-side transistors is arranged, one by one, next to the plurality of low-side transistors,

an output pattern, a power supply pattern, and a ground pattern are in the conductive layer,

the plurality of high-side transistors is electrically connected to the output pattern and to the power supply pattern,

the plurality of low-side transistors is electrically connected to the output pattern and to the ground pattern,

at least one of the power supply pattern and the ground pattern has a plurality of wiring regions electrically connected via a connection member,

the connection member comprises a conductor having a planar shape,

the substrate includes the insulating layer, the conductive layer, and a heat dissipation layer on another surface of the insulating layer,

the connection member has a main body that is in a planar shape and that faces the conductive layer with a distance between the main body and the conductive layer, and an extending part extending from the main body to any one of the plurality of wiring regions,

the substrate is provided with a first through-hole, a second through-hole, and a third through-hole, the first through-hole penetrating the insulating layer, the second through-hole penetrating any one of the plurality of wiring regions to communicate with the first through-hole, the third through-hole penetrating the heat dissipation layer to communicate with the first through-hole,

the extending part of the connection member is bonded, with soldering, to one of the plurality of wiring regions that is provided with the second through-hole while being inserted into the first through-hole, the second through-hole, and the third through-hole, and

the third through-hole has a larger opening area than an opening area of the first through-hole to prevent the extending part of the connection member inserted into the first through-hole, the second through-hole, and the third through-hole from making contact with an inner wall of the third through-hole.

6. The switching power supply device according to claim 5, wherein

a material of the connection member is identical in type to a material of the heat dissipation layer.

7. The switching power supply device according to claim 5, wherein portions of the connection member are subjected to plate processing for solder bonding.

8. The switching power supply device according to claim 5, further comprising:

a nut bonded to any one of the plurality of wiring regions with soldering; and

a bolt that penetrates the connection member and that is fixed to the nut.

9. The switching power supply device according to claim 5, wherein

at least one of the power supply pattern or the ground pattern has a continuous annular path.