Methods and circuits for improved reliability of power devices operating under repetitive thermal stress

• US 10,411,693 B2
• Filed: 10/28/2014
• Issued: 09/10/2019
• Est. Priority Date: 10/28/2014
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Boianceanu, Cristian Mihai, Simon, Dan-Ionut
• Primary Examiner(s): Abbaszadeh, Jaweed A
• Assistant Examiner(s): Mazyad, Alyaa T
• Application Number:
  US14/526,332
• Publication Number:
  US 20160118976A1
• Time in Patent Office: 1,778 Days
• CPC Class Codes: H03K 17/145 in field-effect transistor switches
• CPC Class Codes: H03K 17/687 the devices being field-effect transistors

Abstract

Thermo-migration induced stress in power devices can be mitigated by deactivating a subset of power device components (e.g., transistors, etc.) when the power device experiences a high stress condition. Deactivating the subset of power device components serves to bifurcate the active area of the power switching device into smaller active regions, which advantageously changes the temperature gradients in the active area/regions. In some embodiments, a control circuit dynamically deactivates different subsets of power device components to shift the thermo-migration induced stress points to different portions of the active region over the lifetime of the power switching device.

Claims

1. A method comprising:

sensing when an active region in an active area of a power switching device is experiencing at least a threshold amount of thermo-mechanical stress, wherein the power switching device comprises an input port, an output port, and a set of power device components coupled between the input port and the output port, wherein the active region of the power switching device includes activated power device components in the set of power device components, and wherein electrical current flows from the input port over the active region to the output port when the power switching device is in a conducting stage; and

activating a first subset of the power device components without activating a second subset of the power device components to dynamically bifurcate a shape of the active region into a plurality of active sub-regions in response to sensing that the active region in the active area of the power switching device is experiencing at least the threshold amount of thermo-mechanical stress, wherein the electrical current flows through the first subset of the power device components without flowing through the second subset of the power device components when the power switching device is in the conducting stage, wherein dynamically bifurcating the shape of the active region reduces a temperature gradient of the active region.

2. The method of claim 1, wherein activating the first subset of the power device components without activating the second subset of the power device components changes the temperature gradient across the active area of the power switching device.

3. The method of claim 1, wherein the power device components comprise transistors, the first subset of the power device components corresponding to a first subset of the transistors, and the second subset of the power device components corresponding to a second subset of the transistors, and

wherein the power switching device further comprises a first subset of connections adapted to carry activation signals to gates of the first subset of the transistors, and a second subset of connections adapted to carry activation signals to gates of the second subset of the transistors.

4. The method of claim 3, wherein the second subset of connections are opened, while the first subset of connections are closed, and wherein the second subset of connections being opened prevents the activation signals from reaching the gates of the second subset of the transistors when the power switching device is in the conducting stage.

5. The method of claim 4, wherein the power switching device further comprises a third subset of connections adapted to carry triggering signals from a gate driver to the gates of the transistors when the power switching device is actuated by the gate driver, and

wherein the third subset of connections is independent from the second subset of connections such that the triggering signals are provided to the gates of the second subset of the transistors during actuation of the power switching device irrespective of the second subset of connections being opened.

6. The method of claim 5, wherein the second subset of connections are permanently opened during a manufacturing process of the power switching device.

7. The method of claim 1, wherein sensing when the active region in the active area of the power switching device is experiencing at least the threshold amount of thermo-mechanical stress comprises using an array of thermo-mechanical stress sensors disposed in the active area.

8. The method of claim 7, wherein the array of thermo-mechanical stress sensors comprises a metal line stress array sensor.

9. The method of claim 7, wherein the array of thermo-mechanical stress sensors comprises a plurality of temperature sensors disposed within the active area.

10. The method of claim 1, wherein sensing comprises using a temperature sensor.

11. The method of claim 1, wherein sensing comprises using a mechanical stress sensor.

12. A method comprising:

sensing when an active area in an active region of a power switching device experiences at least a threshold amount of thermo-mechanical stress, wherein the power switching device comprises an input port, an output port, and power device components coupled between the input port and the output port, and wherein electrical current flows between the input port and the output port when the power switching device is in a conducting stage; and

dynamically deactivating different subsets of the power device components during different periods to dynamically bifurcate a shape of the active region of the power switching device into a plurality of active sub-regions, wherein at least one of the power device components remains activated during each of the different periods, and bifurcating the shape of the active region reduces a temperature gradient of the active region, and

wherein the electrical current flows through activated power device components without flowing through the different subsets of the power device components that are deactivated during a given period when the power switching device is in the conducting stage.

13. The method of claim 12, wherein dynamically deactivating the different subsets of the power device components during the different periods comprises:

selectively deactivating the different subsets of the power device components in accordance with a random selection criteria.

14. The method of claim 12, wherein dynamically deactivating the different subsets of the power device components during the different periods comprises:

selectively deactivating the different subsets of the power device components in accordance with a predefined pattern.

15. The method of claim 12, wherein dynamically deactivating the different subsets of the power device components during the different periods comprises:

selectively deactivating the different subsets of the power device components in accordance with readings from stress sensors configured to measure a thermo-mechanical stress of the active area.

16. The method of claim 15, wherein the stress sensors are temperature sensors.

17. The method of claim 15, wherein the stress sensors are mechanical stress sensors.

18. The method of claim 15, wherein the power device components comprise transistors,

wherein the power switching device further comprises a first subset of connections adapted to carry activation signals to gates of a first subset of the transistors, and a second subset of connections adapted to carry activation signals to gates of a second subset of the transistors, and

wherein dynamically deactivating the different subsets of the power device components during the different periods comprises:

opening the first subset of connections during a first period, wherein opening the first subset of connections prevents the activation signals from activating the first subset of the transistors during the first period; and

opening the second subset of connections during a second period, wherein opening the second subset of connections prevents the activation signals from activating the second subset of the transistors during the second period.

19. The method of claim 18, further comprising:

sending triggering signals over a third subset of connections during the first period, the third subset of connections extending from a gate driver to gates of the transistors, wherein the third subset of connections are independent from the first subset of connections such that the triggering signals activate the first subset of the transistors when the power switching device is actuated during the first period irrespective of the second subset of connections being opened.

20. A power switching device comprising:

an input port adapted to be coupled to a load;

an output port adapted to be coupled to a sink, wherein electrical current flows between the input port and the output port when the power switching device is in a conducting stage;

a thermo-mechanical stress sensor configured to measure a thermo-mechanical stress of an active region of the power switching device; and

a plurality of power device components coupled between the input port and the output port, wherein a first subset of the power device components are de-activated when the thermo-mechanical stress sensor indicates that the active region of the power switching device experiences at least a threshold amount of thermo-mechanical stress during a first period to dynamically bifurcate a shape of the active region of the power switching device into a plurality of active sub-regions, wherein dynamically bifurcating the shape of the active region reduces a temperature gradient of the active region, and a second subset of the power device components remain activated when the thermo-mechanical stress sensor indicates that the active region of the power switching device experiences at least the threshold amount of thermo-mechanical stress during the first period, and

wherein the electrical current flows through the second subset of the power device components without flowing through the first subset of the power device components when the thermo-mechanical stress sensor indicates that the active region of the power switching device experiences at least the threshold amount of thermo-mechanical stress during the first period.

21. The power switching device of claim 20, wherein the power device components comprise transistors having drain-source paths coupled between the input port and the output port, the first subset of the power device components corresponding to a first subset of the transistors, and the second subset of the power device components corresponding to a second subset of the transistors.

22. The power switching device of claim 21, further comprising:

a first subset of connections configured to carry first activation signals to gates of the first subset of the transistors;

a second subset of connections configured to carry second activation signals to gates of the second subset of the transistors; and

a controller configured to open the first subset of connections during the first period without opening the second subset of connections when the active region of the power switching device experiences at least the threshold amount of thermo-mechanical stress during the first period.

23. The power switching device of claim 22, further comprising:

a gate driver adapted to provide triggering signals when the power switching device is actuated; and

a third subset of connections configured to carry the triggering signals to gates of the transistors when the power switching device is actuated,

wherein the third subset of connections are independent from the first subset of connections such that the triggering signals activate the first subset of the transistors when the power switching device is actuated during the first period irrespective of the first subset of connections being open.

24. The power switching device of claim 21, wherein the power switching device further comprises:

connections adapted to carry activation signals to gates of the transistors; and

a control circuit configured to dynamically open different subsets of the connections during different periods to prevent the activation signals from activating a corresponding subset of the transistors when the active region of the power switching device experiences at least the threshold amount of thermo-mechanical stress during a corresponding period.

25. The power switching device of claim 24, wherein the control circuit is adapted to selectively deactivate the different subsets of the transistors during the different periods in accordance with a random selection criteria.

26. The power switching device of claim 24, wherein the control circuit is adapted to selectively deactivate the different subsets of the transistors during the different periods in accordance with a predefined pattern.

27. The power switching device of claim 24, wherein the control circuit is adapted to selectively deactivate the different subsets of the transistors during the different periods in accordance with readings from the thermo-mechanical stress sensor.

28. The power switching device of claim 27, wherein the thermo-mechanical stress sensor comprises temperature sensors.

29. The power switching device of claim 28, wherein the temperature sensors comprise a plurality of temperature sensors disposed in the active region.

30. The power switching device of claim 27, wherein the thermo-mechanical stress sensor comprises mechanical stress sensors.

31. The power switching device of claim 30, wherein the mechanical stress sensors comprise a metal line stress array sensor.

32. The power switching device of claim 21, wherein the input port is adapted to be coupled to an inductive load, and wherein the power switching device further comprises:

a chain of diodes, including at least a Zener diode, coupled between the input port and gates of the transistors, the chain of diodes adapted to enter an avalanche mode when a voltage across at least one of the power device components exceeds a threshold; and

connections extending between the chain of diodes and the gates of the transistors, the connections configured to carry activation signals to the gates of the transistors when the chain of diodes enter the avalanche mode,

wherein a first subset of the connections extend between the chain of diodes and the gates of the second subset of the transistors, the first subset of the connections being open during the first period, and

wherein a second subset of the connections extend between the chain of diodes and the gates of the second subset of the transistors, the second subset of the connections being closed during the first period.

33. The power switching device of claim 32, wherein the second subset of the connections are permanently open.

34. The power switching device of claim 32, wherein at least some connections in the first subset of the connections are closed during a second period.

35. The power switching device of claim 21, wherein the input port is adapted to be coupled to a capacitive load, and wherein the power switching device further comprises:

a gate driver configured to actuate the power switching device by providing a triggering signal to gates of the transistors;

a first subset of connections extending between the gate driver and the gates of the first subset of the transistors, the first subset of connections being open during the first period; and

a second subset of connections extending between the gate driver and the gates of the second subset of the transistors, the second subset of connections being closed during the first period.

36. The power switching device of claim 35, wherein the second subset of connections are permanently open.

37. The power switching device of claim 35, wherein at least some connections in the first subset of connections are closed during a second period.