Etching composition and method for fabricating semiconductor device by using the same
First Claim
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1. An etching composition comprising:
- a peracetic acid mixture;
a fluorine compound;
an acetate series organic solvent;
at least one silicon compound, whereinthe at least one silicon compound includes one of alkoxy silane compound, silanol compound, oxime silane compound, disilazane compound, or disiloxane compound, andthe silicon compound is included in a range of 0.01 wt % to 5 wt % with respect to a total weight of the etching composition; and
water, whereinthe peracetic acid mixture includes an acetic acid solution and a hydrogen peroxide solution mixed together with a volume ratio of 33;
10 to 33;
33, and at least one ofthe acetate series organic solvent is included in a range of 15 wt % to 65 wt % with respect to the total weight of the etching composition, orthe fluorine compound is included in a range of 0.01 wt % to 5 wt % with respect to the total weight of the etching composition.
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Abstract
An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).
17 Citations
17 Claims
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1. An etching composition comprising:
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a peracetic acid mixture; a fluorine compound; an acetate series organic solvent; at least one silicon compound, wherein the at least one silicon compound includes one of alkoxy silane compound, silanol compound, oxime silane compound, disilazane compound, or disiloxane compound, and the silicon compound is included in a range of 0.01 wt % to 5 wt % with respect to a total weight of the etching composition; and water, wherein the peracetic acid mixture includes an acetic acid solution and a hydrogen peroxide solution mixed together with a volume ratio of 33;
10 to 33;
33, and at least one ofthe acetate series organic solvent is included in a range of 15 wt % to 65 wt % with respect to the total weight of the etching composition, or the fluorine compound is included in a range of 0.01 wt % to 5 wt % with respect to the total weight of the etching composition. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An etching composition comprising:
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a peracetic acid mixture; a fluorine compound; an acetate series organic solvent; water; and at least one silicon compound, wherein the at least one silicon compound includes one of an alkoxy silane compound, a silanol compound, an oxime silane compound, a disilazane compound, or a disiloxane compound. - View Dependent Claims (8, 9, 10, 11, 12)
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13. An etching composition comprising:
- 15 wt % to 75 wt % of a peracetic acid mixture, based on a total weight of the etching composition;
0.01 wt % to 5 wt % of a fluorine compound, based on the total weight of the etching composition;
15 wt % to 65 wt % of an organic solvent, based on the total weight of the etching composition;
at least one silicon compound, wherein the at least one silicon compound includes one of alkoxy silane compound, silanol compound, oxime silane compound, disilazane compound, or disiloxane compound, and the silicon compound is included in a range of 0.01 wt % to 5 wt % with respect to the total weight of the etching composition; and
water, wherein a sum of respective amounts of the peracetic acid mixture, the fluorine compound, and the organic solvent are less than the total weight of the etching composition. - View Dependent Claims (14, 15, 16, 17)
- 15 wt % to 75 wt % of a peracetic acid mixture, based on a total weight of the etching composition;
Specification