Optoelectronic device for the selective detection of volatile organic compounds and related manufacturing process
First Claim
1. An optoelectronic device for detecting volatile organic compounds, comprising:
- a die including a semiconductor body made of a semiconductor material with an absorption spectrum range, said optoelectronic device being optically couplable to an optical source designed to emit radiation with a spectrum at least partially overlapping said absorption spectrum range;
a MOSFET transistor formed in the semiconductor body, wherein the MOSFET transistor is planar and includes a gate region and a catalytic region that is arranged on the gate region such that, in the presence of a gas mixture including volatile organic compounds, the MOSFET transistor is configured to be biased to generate an electrical signal indicating an overall concentration of the gas mixture within a volume; and
a first photodiode configured to generate, when said optoelectronic device is optically coupled to set optical source, a first photocurrent that is a function of a concentration of one or more polycyclic aromatic hydrocarbons present in said gas mixture.
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Abstract
An optoelectronic device for detecting volatile organic compounds is described, including a die with a semiconductor body, the die forming a MOSFET transistor and at least one photodiode. The optoelectronic device is optically couplable to an optical source that emits radiation with a spectrum at least partially overlapping the absorption spectrum range of the semiconductor body. The MOSFET transistor is planar and includes a gate region and a catalytic region that is arranged on the gate region such that, in the presence of a gas mixture including volatile organic compounds, the MOSFET transistor can be biased to generate an electrical signal indicating the overall concentration of the gas mixture. The photodiode generates a photocurrent that is a function of the concentration of one or more polycyclic aromatic hydrocarbons present in the gas mixture.
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Citations
17 Claims
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1. An optoelectronic device for detecting volatile organic compounds, comprising:
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a die including a semiconductor body made of a semiconductor material with an absorption spectrum range, said optoelectronic device being optically couplable to an optical source designed to emit radiation with a spectrum at least partially overlapping said absorption spectrum range; a MOSFET transistor formed in the semiconductor body, wherein the MOSFET transistor is planar and includes a gate region and a catalytic region that is arranged on the gate region such that, in the presence of a gas mixture including volatile organic compounds, the MOSFET transistor is configured to be biased to generate an electrical signal indicating an overall concentration of the gas mixture within a volume; and a first photodiode configured to generate, when said optoelectronic device is optically coupled to set optical source, a first photocurrent that is a function of a concentration of one or more polycyclic aromatic hydrocarbons present in said gas mixture. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A detection system, comprising:
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an optical source configured to emit radiation with a spectrum; and an optoelectronic device optically coupled to the optical source and including; a die including a semiconductor body made of a semiconductor material with an absorption spectrum range at least partially overlapping the spectrum of the radiation; a MOSFET transistor formed in the semiconductor body, wherein the MOSFET transistor is planar and includes a gate region and a catalytic region that is arranged on the gate region such that, in the presence of a gas mixture including volatile organic compounds, the MOSFET transistor is configured be biased to generate an electrical signal indicating an overall concentration of the gas mixture within a volume; and a first photodiode configured to generate, when said optoelectronic device is optically coupled to set optical source, a first photocurrent that is a function of a concentration of one or more polycyclic aromatic hydrocarbons present in said gas mixture. - View Dependent Claims (10, 11)
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12. An analysis system comprising:
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a detection system including; an optical source configured to emit radiation with a spectrum; and an optoelectronic device optically coupled to the optical source and including; a die including a semiconductor body made of a semiconductor material with an absorption spectrum range at least partially overlapping the spectrum of the radiation; a MOSFET transistor formed in the semiconductor body, wherein the MOSFET transistor is planar and includes a gate region and a catalytic region that is arranged on the gate region such that, in the presence of a gas mixture including volatile organic compounds, the MOSFET transistor is configured be biased to generate an electrical signal indicating an overall concentration of the gas mixture within a volume; and a first photodiode configured to generate, when said optoelectronic device is optically coupled to set optical source, a first photocurrent that is a function of a concentration of one or more polycyclic aromatic hydrocarbons present in said gas mixture, a bias stage configured to bias said MOSFET transistor and said first photodiode, and a processing stage configured to receive and process said electrical signal and said first photocurrent. - View Dependent Claims (13)
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14. A process for manufacturing an optoelectronic device for detecting volatile organic compounds, the process comprising:
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forming, on a die including a semiconductor body, a planar MOSFET transistor, said forming the MOSFET transistor including forming a gate region on the semiconductor body and forming a catalytic region that is arranged on the gate region; forming a first photodiode, wherein forming the first photodiode includes forming a first cathode region that extends inside the semiconductor body; forming a second photodiode on said die, wherein forming the second photodiode includes; forming a second cathode region that extends inside the semiconductor body, and forming a first optical filter arranged above the second cathode region and configured to filter ultraviolet radiation at wavelengths greater than a first threshold value; forming a third photodiode on said die, wherein forming the third photodiode includes; forming a third cathode region that extends inside the semiconductor body, and forming a second optical filter arranged above the third cathode region and configured to filter ultraviolet radiation at wavelengths greater than a second threshold value that is greater than the first threshold value, wherein forming the first and second optical filters includes; forming a preliminary region of a selected material on the third cathode region; subsequently forming a layer of said selected material above the preliminary region and the second cathode region; and subsequently selectively removing portions of said layer of said selected material such that a first residual portion of said layer of said selected material forms the first optical filter, and that a second residual portion of said layer of said selected material forms the second optical filter along with said preliminary region. - View Dependent Claims (15, 16, 17)
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Specification