Semiconductor device and method of manufacturing the same
First Claim
Patent Images
1. A semiconductor device, comprising:
- a source select line including a first conductive layer and a second conductive layer disposed on the first conductive layer;
word lines stacked over the source select line while being spaced apart from one another;
a channel layer which passes through the word lines and the source select line and further protrudes toward a lower direction than the source select line; and
a source structure which is disposed under the source select line and is in direct contact with a lateral wall of the channel layer,wherein the source select line is located between the source structure and the word lines.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device and a method of manufacturing a semiconductor device may be provided. The semiconductor device may include a source select line. The semiconductor device may include word lines. The semiconductor device may include a channel layer. The semiconductor device may include a source structure. The source structure may be disposed under the source select line. The source structure may be in contact with the channel layer.
-
Citations
18 Claims
-
1. A semiconductor device, comprising:
-
a source select line including a first conductive layer and a second conductive layer disposed on the first conductive layer; word lines stacked over the source select line while being spaced apart from one another; a channel layer which passes through the word lines and the source select line and further protrudes toward a lower direction than the source select line; and a source structure which is disposed under the source select line and is in direct contact with a lateral wall of the channel layer, wherein the source select line is located between the source structure and the word lines. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A semiconductor device, comprising:
-
a source select line including a first conductive layer and a second conductive layer disposed on the first conductive layer; word lines stacked over the source select line while being spaced apart from one another; a channel layer passing through the word lines and the source select line and further protruding toward a lower direction than the source select line; a source structure disposed under the source select line and being in direct contact with a lateral wall of the channel layer; a gate insulating layer disposed between the source structure and the first conductive layer; an interface layer disposed between the first conductive layer and the second conductive layer; and interlayer insulating layers disposed between the lowermost layer among the word lines and the second conductive layer and between the adjacent word lines, wherein the interface layer is formed to be thinner than the gate insulating layer and each of the interlayer insulating layers. - View Dependent Claims (15, 16, 17)
-
-
18. A semiconductor device, comprising:
-
a source select line including a first conductive layer and a second conductive layer disposed on the first conductive layer; word lines stacked over the source select line while being spaced apart from one another; a channel layer passing through the word lines and the source select line and further protruding toward a lower direction than the source select line; and a source structure disposed under the source select line and being in direct contact with a lateral wall of the channel layer, wherein the second conductive layer and the word lines are formed of the same conductive material, and are formed of a conductive material having lower resistance than that of the first conductive layer.
-
Specification