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Semiconductor device and method for manufacturing the same

  • US 10,418,466 B2
  • Filed: 02/14/2017
  • Issued: 09/17/2019
  • Est. Priority Date: 09/24/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming a gate electrode layer over a substrate having an insulating surface;

    forming a gate insulating layer over the gate electrode layer;

    forming an oxide semiconductor layer over the gate insulating layer;

    performing a first heat treatment after the oxide semiconductor layer is formed;

    forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer after performing the first heat treatment;

    forming an inorganic insulating layer over the gate insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, wherein the inorganic insulating layer is in contact with part of the oxide semiconductor layer and entirely covers the source electrode layer and the drain electrode layer; and

    performing a second heat treatment after the inorganic insulating layer is formed,wherein a temperature of the second heat treatment is lower than a temperature of the first heat treatment,wherein the inorganic insulating layer comprises a silicon oxide layer, a silicon nitride oxide layer, a silicon nitride layer, an aluminum oxide layer, or an aluminum oxynitride layer, andwherein the oxide semiconductor layer is crystallized after the first heat treatment.

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