Light-emitting device and light-emitting device package

• US 10,418,523 B2
• Filed: 03/16/2016
• Issued: 09/17/2019
• Est. Priority Date: 03/26/2015
• Status: Active Grant

• Current Assignee: Focus Lightings Tech Co., Ltd.
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Lee, Sang Youl, Kim, Hoe Jun, Jung, Sung Ho
• Primary Examiner(s): Withers, Grant S
• Application Number:
  US15/561,432
• Publication Number:
  US 20180122991A1
• Time in Patent Office: 1,280 Days
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting device in an embodiment includes a substrate, a light-emitting structure which is disposed on the substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes which are respectively connected to the first and second conductive semiconductor layers, first and second bonding pads respectively connected to the first and second electrodes, and an insulating layer disposed between the first bonding pad and the second electrode, and between the second bonding pad and the first electrode. The first thickness of the first electrode may be ⅓ or less of the second thickness of the insulating layer disposed between the second bonding pad and the first electrode.

Claims

1. A light-emitting device, comprising:

a substrate;

a light-emitting structure disposed on the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;

first and second electrodes connected respectively to the first and second conductive semiconductor layers, the first electrode being disposed in a contact hole, wherein the contact hole penetrates the second conductive semiconductor layer and the active layer and exposes the first conductive semiconductor layer;

first and second bonding pads connected respectively to the first and second electrodes; and

an insulating layer disposed between the first bonding pad and the second electrode to electrically separate the first bonding pad from the second electrode, and disposed between the second bonding pad and the first electrode to electrically separate the second bonding pad from the first electrode,

wherein the first electrode includes;

a branch electrode disposed under the first and second bonding pads; and

a contact electrode disposed under the first bonding pad,

wherein the branch electrode includes a first segment disposed under the second bonding pad,

wherein the first segment includes;

a first upper surface facing the second bonding pad; and

a lower surface opposite to the first upper surface and facing the substrate,

wherein a portion of the first segment of the branch electrode is buried in the first conductive semiconductor layer so that the lower surface of the first segment is closer to the substrate than a bottom surface of the contact hole,

wherein the first electrode has a first thickness that is ⅓

or less of a second thickness of a portion of the insulating layer disposed on the first electrode and between the second bonding pad and the first electrode, and

wherein the first thickness is a thickness of a portion of the first electrode that is exposed without being buried in the first conductive semiconductor layer.

2. The light-emitting device according to claim 1, wherein the branch electrode further includes:

a second segment disposed under the first bonding pad.

3. The light-emitting device according to claim 1, wherein the substrate has a first length and the branch electrode has a second length in a first direction, and the first length and the second length have a following relationship;

L1×

0.7>

L2

(where, L1 indicates the first length and L2 indicates the second length), and

wherein the first and second bonding pads are spaced apart from each other in the first direction, which is orthogonal to a thickness direction of the light-emitting structure.

4. The light-emitting device according to claim 2, wherein the branch electrode further includes a third segment disposed between the first segment and the second segment.

5. The light-emitting device according to claim 1, wherein the first thickness is 1 μ

m or less and the second thickness is 3.3 μ

m or less.

6. The light-emitting device according to claim 1, wherein the first electrode includes a plurality of sub-electrodes spaced apart from one another in a direction that is orthogonal to a thickness direction of the light-emitting structure.

7. The light-emitting device according to claim 6, wherein the insulating layer is buried between the sub-electrodes.

8. The light-emitting device according to claim 6, wherein the sub-electrodes have different thicknesses.

9. The light-emitting device according to claim 6, wherein the sub-electrodes have the same thickness.

10. The light-emitting device according to claim 6, wherein the sub-electrodes are spaced apart from one another by a distance that is determined in consideration of a processing error to allow the insulating layer to be buried.

11. The light-emitting device according to claim 1, wherein the insulating layer is overlapped in a thickness direction of the light-emitting structure with the first upper surface of the first segment, and is overlapped in the thickness direction of the light-emitting structure with the second bonding pad, the insulating layer including a second upper surface facing the second bonding pad, and

wherein the second upper surface of the insulating layer has at least one first recess therein.

12. The light-emitting device according to claim 1, wherein the first bonding pad and the second bonding pad face each other in a first direction,

wherein the first bonding pad has a length in the first direction that is less than a length of the substrate in the first direction, and

wherein the second bonding pad has a length in the first direction that is less than the length of the substrate in the first direction.

13. The light-emitting device according to claim 1, wherein the first bonding pad and the second bonding pad face each other in a first direction,

wherein the first bonding pad has a length in the first direction that is less than a length of the branch electrode in the first direction, and

wherein the second bonding pad has a length in the first direction that is less than the length of the branch electrode in the first direction.

14. A light-emitting device package comprising:

the light-emitting device according to claim 1;

first and second solder parts connected respectively to the first and second bonding pads; and

first and second lead frames electrically connected respectively to the first and second solder parts.