Silicon-based films and methods of forming the same

• US 10,422,034 B2
• Filed: 12/20/2017
• Issued: 09/24/2019
• Est. Priority Date: 11/03/2014
• Status: Active Grant

• Current Assignee: Versum Materials US Inc.
• Original Assignee: Versum Materials US Inc.
• Inventors: Lei, Xinjian, Mallikarjunan, Anupama, MacDonald, Matthew R., Xiao, Manchao
• Primary Examiner(s): Bakshi, Pancham
• Application Number:
  US15/848,270
• Publication Number:
  US 20180119276A1
• Time in Patent Office: 643 Days
• CPC Class Codes: C23C 16/325 Silicon carbide
• CPC Class Codes: C23C 16/36 Carbonitrides
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD

Abstract

Disclosed herein are containing silicon-based films and compositions and methods for forming the same. The silicon-based films contain <50 atomic % of silicon. In one aspect, the silicon-based films have a composition Si_xC_yN_z wherein x is about 0 to about 55, y is about 35 to about 100, and z is about 0 to about 50 atomic weight (wt.) percent (%) as measured by XPS. In another aspect, the silicon-based films were deposited using at least one organosilicon precursor comprising two silicon atoms, at least one Si-Me group, and an ethylene or propylene linkage between the silicon atoms such as 1,4-disilapentane.

Claims

1. A method for forming a silicon-based film on at least a portion of the surface of a substrate, the method comprising:

providing at least one surface of the substrate in a reactor;

introducing at least one organosilicon precursor compound having the following Formulae A through D into the reactor;

2. The method of claim 1 wherein the forming step is conducted at one or more temperatures ranging from about 100°

C. to 650°

C.

3. The method of claim 1 wherein the silicon-based film is selected from the group consisting of a silicon carbide film, a silicon nitride film, and a silicon carbonitride film.

4. The method of claim 1 wherein the deposition process is LPCVD.

5. The method of claim 1 wherein the deposition process comprises PECVD.

6. The method of claim 1 further comprising:

providing a nitrogen-containing precursor and wherein a ratio of the amount of the nitrogen-containing precursor to the amount of at least one organosilicon precursor ranges from 0.25 to 1.

9. The method of claim 1 wherein the method is an atomic layer deposition method.

10. The method of claim 1 wherein the method is a plasma enhanced atomic layer deposition method.

11. The method of claim 1 wherein the deposition process is PEALD.

12. The method of claim 11 wherein the at least one organosilicon precursor comprises at least one selected from the group consisting of dimethylamino-1,4-disilapentane, 1-diethylamino-1,4-disilapentane, 1-methylethylamino-1,4-disilapentane, 1-di-n-propylamino-1,4-disilapentane, 1-di-iso-propylamino-1,4-disilapentane, 1-iso-propylamino-1,4-disilapentane, 1-sec-butylamino-1,4-disilapentane, 1-tert-butylamino-1,4-disilapentane, 1-(2,6-dimethylpiperidino)-1,4-disilapentane, 1-piperidino-1,4-disilapentane, 1-(cyclohexyl-iso-propylamino)-1,4-disilapentane, and 1-(n-propyl-iso-propylamino)-1,4-disilapentane.

7. A method for forming a silicon-based film on at least one surface of a substrate, the method comprising:

providing at least one surface of the substrate in a reaction chamber;

introducing at least one organosilicon precursor compound having the following Formulae A through D into the reactor;

8. The method of claim 7 wherein the forming step is conducted at one or more temperatures ranging from 100°

C. to 650°

C.