Methods for determining resist deformation

• US 10,423,076 B2
• Filed: 02/24/2016
• Issued: 09/24/2019
• Est. Priority Date: 03/16/2015
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Liu, Peng
• Primary Examiner(s): Young, Christopher G
• Application Number:
  US15/553,879
• Publication Number:
  US 20180246419A1
• Time in Patent Office: 1,308 Days
• Field of Search: 430 30
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70558 Dose control, i.e. achievement of a desired dose
• CPC Class Codes: G03F 7/70608 Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
• CPC Class Codes: G03F 7/70616 Monitoring the printed patterns

Abstract

A method including: obtaining at least a characteristic of deformation of a resist layer in a first direction, as if there were no deformation in any directions perpendicular to the first direction; obtaining at least a characteristic of deformation of the resist layer in a second direction as if there were no deformation in the first direction, the second direction being perpendicular different to from the first direction; and obtaining at least a characteristic of three-dimensional deformation of the resist layer based on the characteristic of the deformation in the first direction and the characteristic of the deformation in the second direction.

Claims

1. A method comprising:

obtaining at least a characteristic of deformation of a resist layer occurring in a first direction, as if there were no deformation occurring in any directions perpendicular to the first direction;

obtaining at least a characteristic of deformation of the resist layer occurring in a second direction as if there were no deformation occurring in the first direction, the second direction being different from the first direction; and

obtaining, by a hardware computer system, at least a characteristic of three-dimensional deformation of the resist layer based on the characteristic of the deformation occurring in the first direction and the characteristic of the deformation occurring in the second direction.

2. The method of claim 1, further comprising obtaining at least a characteristic of deformation occurring in a third direction as if there were no deformation occurring in the first direction.

3. The method of claim 1, wherein the characteristic of three-dimensional deformation is a change in an edge displacement error.

4. The method of claim 1, wherein the characteristic of deformation occurring in the first direction is a displacement in the first direction of a location in the resist layer, and/or wherein the characteristic of deformation occurring in the second direction is a displacement in the second direction of a location in the resist layer.

5. The method of claim 1, wherein the resist layer is on a substrate and a portion of the resist layer in direct contact with the substrate has zero displacement in the first direction, or wherein the portion of the resist layer in direct contact with the substrate has zero displacement in the second direction.

6. The method of claim 1, wherein obtaining at least a characteristic of deformation of the resist layer occurring in the first direction comprises integrating engineering strain over a distance in the first direction.

7. The method of claim 1, wherein obtaining at least a characteristic of deformation of the resist layer occurring in the second direction comprises balancing sheer stress and normal stress in the second direction.

8. The method of claim 1, wherein the resist layer is developed with a negative tone developer.

9. The method of claim 1, wherein portions of the resist layer that are dissolved in development have a Young'"'"'s modulus of zero.

10. The method of claim 1, further comprising adjusting a parameter of a device manufacturing process or a device manufacturing apparatus based on the characteristic of three-dimensional deformation.

11. The method of claim 10, wherein the resist layer will undergo one or more physical or chemical treatments during the device manufacturing process or using the device manufacturing apparatus.

12. The method of claim 1, further comprising determining an overlapping process window (OPW) of a plurality of patterns of a design layout, based on the characteristic of three-dimensional deformation.

13. The method of claim 12, further comprising determining or predicting, an existence, a probability of existence, one or more characteristics, or a combination selected therefrom, of a defect produced from the plurality of patterns, based on the OPW.

14. A method for improving a lithographic process for creating-a portion of a design layout on a substrate using a lithographic apparatus, the method comprising:

computing, by a hardware computer system, a multi-variable cost function, the multi-variable cost function being a function of at least a characteristic of deformation of a resist layer on the substrate and a plurality of design variables that are characteristics of the lithographic process; and

reconfiguring one or more of the characteristics of the lithographic process by adjusting one or more of the design variables and re-computing the multi-variable cost function until a certain termination condition is satisfied.

15. The method of claim 14, wherein the characteristic of deformation of the resist layer is a strain at a location in the resist layer, and/or wherein the characteristic of deformation of the resist layer is displacement of a location in the resist layer.

16. The method of claim 14, wherein the characteristic of deformation is a function of one or more of the design variables.

17. The method of claim 14, wherein the one or more of the characteristics of the lithographic process comprise a parameter of the design layout.

18. A non-transitory computer readable-medium comprising instructions configured to cause a computer system to:

obtain at least a characteristic of deformation of a resist layer occurring in a first direction, as if there were no deformation occurring in any directions perpendicular to the first direction;

obtain at least a characteristic of deformation of the resist layer occurring in a second direction as if there were no deformation occurring in the first direction, the second direction being different from the first direction; and

obtain at least a characteristic of three-dimensional deformation of the resist layer based on the characteristic of the deformation occurring in the first direction and the characteristic of the deformation occurring in the second direction.

19. The computer-readable medium of claim 18, wherein the instructions are further configured to cause the computer system to:

compute a multi-variable cost function, the multi-variable cost function being a function of at least the characteristic of three-dimensional deformation and a plurality of design variables that are characteristics of a lithographic process for creating a portion of a design layout on a substrate using a lithographic apparatus; and

reconfigure one or more of the characteristics of the lithographic process by adjusting one or more of the design variables and re-computing the multi-variable cost function until a certain termination condition is satisfied.

20. The computer-readable medium of claim 18, wherein the instructions are further configured to cause the computer system to obtain at least a characteristic of deformation occurring in a third direction as if there were no deformation occurring in the first direction.