Multi-cell resonator microwave surface-wave plasma apparatus

• US 10,424,462 B2
• Filed: 11/06/2014
• Issued: 09/24/2019
• Est. Priority Date: 11/06/2013
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Funk, Merritt, Doppel, Megan, Entralgo, John, Zhao, Jianping, Nozawa, Toshihisa
• Primary Examiner(s): Dhingra, Rakesh K
• Application Number:
  US14/534,870
• Publication Number:
  US 20150126046A1
• Time in Patent Office: 1,783 Days
• Field of Search: 118723 MW, 15634541
• CPC Class Codes: H01J 2237/327 Arrangements for generating the plasma
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32229 Waveguides
• CPC Class Codes: H01J 37/32266 Means for controlling power transmitted to the plasma

Abstract

A processing system is disclosed, having a multiple power transmission elements with an interior cavity that may be arranged around a plasma processing chamber. Each of the power transmission elements may propagates electromagnetic energy that may be used to generate plasma within the plasma process chamber. The power transmission elements may be designed to accommodate a range of power and frequency ranges that range from 500 W to 3500 W and 0.9 GHz to 9 GHz. In one embodiment, the power transmission elements may include a rectangular interior cavity that enables the generation of a standing wave with two or more modes. In another embodiment, the power transmission elements may have a cylindrical interior cavity that may be placed along the plasma processing chamber or have one end of the cylinder placed against the plasma processing chamber.

Claims

1. A plasma processing system for processing semiconductor substrates, comprising:

a plasma chamber comprising a plasma processing area and a substrate holder disposed in the plasma processing area;

a plurality of power transmission elements arranged circumferentially around a periphery of the plasma chamber, each power transmission element comprising;

an interior cavity to propagate microwave frequency electromagnetic waves; and

an opening between the interior cavity and the plasma chamber, with the opening being an exit for the interior cavity on a plasma chamber side of the interior cavity;

an antenna coupled to each power transmission element, wherein each antenna extends into a respective interior cavity and is disposed away from a respective opening at a predetermined distance; and

a dielectric component that limits fluid communication between the interior cavity and the plasma chamber,

wherein the predetermined distance from the opening is at least about ¼

wavelength of the microwave frequency electromagnetic waves,

wherein each antenna extends through a top wall of a respective power transmission element such that the antenna is perpendicular to the top wall;

wherein the antennas are disposed above the plasma processing area and arranged around the plasma chamber;

wherein each opening has a dimension in a first direction of at least about ¼

wavelength of the microwave frequency electromagnetic waves and a dimension in a second direction orthogonal to the first direction of from 0.5 mm to 10 mm; and

wherein the dielectric component has an arcuate shape that is installed within the plasma chamber and extends to cover a plurality of said openings that are disposed circumferentially and associated with plural interior cavities respectively of the plurality of power transmission elements, such that the microwave frequency electromagnetic waves pass from the plural interior cavities through their respective openings and then through the dielectric component into the plasma chamber.

2. The plasma processing system of claim 1, wherein the interior cavities of the power transmission elements are not in fluid communication with each other.

3. The plasma processing system of claim 1, wherein the power transmission elements are arranged in a circular manner around the substrate holder.

4. The plasma processing system of claim 1, wherein each antenna is disposed opposite of or parallel to a respective dielectric component.

5. The plasma processing system of claim 1, further comprising a solid state amplifier that can vary one or more of the following characteristics of the electromagnetic waves:

power, phase, frequency, or modulation.

6. The plasma processing system of claim 1, wherein the at least two of the power transmission elements comprise a common wall that electrically isolates the at least two power transmission elements from each other.

7. The plasma processing system of claim 1, wherein the power transmission elements comprise:

a first power transmission element comprising a first interior cavity; and

a second power transmission element comprising a second interior cavity that has a geometry or volume that is different from the first interior cavity.

8. The apparatus of claim 7, further comprising a solid state amplifier for the respective power transmission elements to control the phase, power, frequency, and modulation of the electromagnetic energy to the power transmission elements.

9. The plasma processing system according to claim 1, wherein at least one interior cavity of the plurality of power transmission elements has a rounded perimeter and wherein the opening is an opening through the rounded perimeter.

10. The plasma processing system according to claim 9, wherein the antenna of the at least one cavity having the rounded perimeter extends in a direction parallel to a curvature axis of the rounded perimeter.

11. The plasma processing system of claim 1, wherein the plasma chamber is cylindrical, the substrate holder is configured to support a semiconductor substrate, and a direction from (a) the antenna toward (b) the opening is a radially inward direction.

12. An apparatus, comprising:

a plasma processing chamber comprising;

plasma processing area;

a substrate holder disposed in the plasma processing area and can receive a substrate; and

a chamber wall comprising a plurality of openings arranged circumferentially around the substrate holder;

one or more dielectric components installed within the plasma processing chamber that cover the openings;

a plurality of power transmission elements that are disposed adjacent to the openings and opposite the one or more dielectric components, the plurality of power transmission elements extending from a periphery of the plasma processing chamber and comprising a waveguide cavity with at least one respective opening of the plurality of openings being an exit for the waveguide cavity on a plasma processing area side of the waveguide cavity that can transmit electromagnetic energy towards the respective opening;

one or more antennas coupled to each of the power transmission elements, wherein each antenna extends into a respective waveguide cavity and is disposed away from a respective opening at a predetermined distance; and

a power source component that provides the electromagnetic energy within a range of 300 kHz to 300 GHz to the plurality of power transmission elements,

wherein the predetermined distance from the opening is at least about ¼

wavelength of the electromagnetic energy,

wherein each antenna extends through a top wall of a respective power transmission element such that the antenna is perpendicular to the top wall; and

wherein the antennas are disposed above the plasma processing area and arranged around the chamber wall of the plasma chamber;

wherein each opening has a dimension in a first direction of at least about ¼

wavelength of the electromagnetic energy, and the opening has a dimension in a second direction orthogonal to the first direction of from 0.5 mm to 10 mm; and

wherein the one or more dielectric components include an arcuate dielectric component that has an arcuate shape and that extends to cover a plurality of said openings associated with plural waveguide cavities of the plurality of power transmission elements, such that the electromagnetic energy passes from the waveguide cavities through their respective openings and then through the arcuate dielectric component into the plasma processing area.

13. The apparatus of claim 12, wherein the openings are disposed horizontally in the chamber wall around the substrate holder.

14. The apparatus of claim 12, wherein the openings are disposed vertically in the chamber wall around the substrate holder.

15. The apparatus of claim 12, wherein at least one of the power transmission elements comprise:

a first waveguide cavity having a length or a width of at least ¼

wavelength of the electromagnetic energy, and

a second waveguide cavity having a length or width of at least wavelength of the electromagnetic energy.

16. The apparatus of claim 15, wherein the power source component provides a first frequency bandwidth of electromagnetic energy to a first power transmission element and a second frequency bandwidth of electromagnetic energy to a second power transmission element.

17. The apparatus of claim 12, wherein the openings form a continuous opening around the plasma processing chamber.

18. The apparatus of claim 12, wherein the power transmission elements comprise a first group with a first interior cavity design and a second group with a second interior cavity design, wherein the first interior cavity design has a first volume that is different from a second volume of the second interior cavity design.

19. The plasma processing apparatus of claim 12, wherein at least one waveguide cavity has a rounded perimeter and wherein the opening is an opening through the rounded perimeter.

20. The plasma processor apparatus according to claim 19, wherein the antenna of the at least one waveguide cavity that has a rounded perimeter extends in a direction parallel to an axis of curvature of the rounded perimeter.

21. The plasma processing apparatus of claim 12, wherein the plasma processing chamber is cylindrical, the substrate holder is configured to hold a semiconductor substrate, and a direction from (a) the antenna toward (b) the opening is a radially inward direction.