Liquid crystal display device
First Claim
1. A display device comprising:
- a thin film transistor comprising;
a gate electrode layer;
a first insulating layer over the gate electrode layer;
a channel formation region containing an oxide semiconductor, the channel formation region being over the first insulating layer and overlapping with the gate electrode layer;
an n-type region including one of a source region and a drain region; and
a second insulating layer over the channel formation region;
a pixel electrode layer electrically connected to the thin film transistor;
a light-transmitting chromatic color resin layer overlapping with the channel formation region; and
an electrode layer over the second insulating layer and overlapping with the gate electrode layer and the channel formation region,wherein the channel formation region is included in a semiconductor layer,wherein the n-type region includes crystals each having a diameter of 1 nm to 10 nm,wherein the light-transmitting chromatic color resin layer has a light transmittance lower than a light transmittance of the semiconductor layer,wherein the oxide semiconductor contains indium, gallium, and zinc,wherein the n-type region contains indium, gallium, zinc and oxygen,wherein the second insulating layer contains silicon and oxygen, andwherein a length of the gate electrode layer is larger than a length of the semiconductor layer in a direction parallel to a channel length direction of the thin film transistor.
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Accused Products
Abstract
To provide a liquid crystal display device suitable for a thin film transistor which uses an oxide semiconductor. In a liquid crystal display device which includes a thin film transistor including an oxide semiconductor layer, a film having a function of attenuating the intensity of transmitting visible light is used as an interlayer film which covers at least the oxide semiconductor layer. As the film having a function of attenuating the intensity of transmitting visible light, a coloring layer can be used and a light-transmitting chromatic color resin layer is preferably used. An interlayer film which includes a light-transmitting chromatic color resin layer and a light-blocking layer may be formed in order that the light-blocking layer is used as a film having a function of attenuating the intensity of transmitting visible light.
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Citations
42 Claims
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1. A display device comprising:
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a thin film transistor comprising; a gate electrode layer; a first insulating layer over the gate electrode layer; a channel formation region containing an oxide semiconductor, the channel formation region being over the first insulating layer and overlapping with the gate electrode layer; an n-type region including one of a source region and a drain region; and a second insulating layer over the channel formation region; a pixel electrode layer electrically connected to the thin film transistor; a light-transmitting chromatic color resin layer overlapping with the channel formation region; and an electrode layer over the second insulating layer and overlapping with the gate electrode layer and the channel formation region, wherein the channel formation region is included in a semiconductor layer, wherein the n-type region includes crystals each having a diameter of 1 nm to 10 nm, wherein the light-transmitting chromatic color resin layer has a light transmittance lower than a light transmittance of the semiconductor layer, wherein the oxide semiconductor contains indium, gallium, and zinc, wherein the n-type region contains indium, gallium, zinc and oxygen, wherein the second insulating layer contains silicon and oxygen, and wherein a length of the gate electrode layer is larger than a length of the semiconductor layer in a direction parallel to a channel length direction of the thin film transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A display device comprising:
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a thin film transistor comprising; a gate electrode layer; a first insulating layer over the gate electrode layer; a channel formation region, the channel formation region being over the first insulating layer and overlapping with the gate electrode layer; an n-type region including one of a source and a drain; a source electrode and a drain electrode over the channel formation region including an oxide semiconductor; and a second insulating layer over the channel formation region; a light-transmitting chromatic color resin layer over the second insulating layer; a third insulating layer over and in direct contact with the light-transmitting chromatic color resin layer; a pixel electrode layer electrically connected to one of the source electrode and the drain electrode of the thin film transistor; and an electrode layer over the second insulating layer and overlapping with the gate electrode layer and the channel formation region, wherein the channel formation region is included in a semiconductor layer, wherein the n-type region includes crystals each having a diameter of 1 nm to 10 nm, wherein the light-transmitting chromatic color resin layer has a light transmittance lower than a light transmittance of the semiconductor layer, wherein the light-transmitting chromatic color resin layer covers the channel formation region and the n-type region, wherein the oxide semiconductor contains indium, gallium, and zinc, wherein the second insulating layer contains silicon and oxygen, wherein the n-type region contains indium, gallium, zinc and oxygen, wherein the pixel electrode layer contains indium tin oxide, wherein a length of the gate electrode layer is larger than a length of the semiconductor layer in a direction parallel to a channel length direction of the thin film transistor. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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22. A display device comprising:
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a thin film transistor comprising; a gate electrode layer; a first insulating layer over the gate electrode layer; a channel formation region containing an oxide semiconductor, the channel formation region being over the first insulating layer and overlapping with the gate electrode layer; an n-type region including one of a source region and a drain region; and a second insulating layer over the channel formation region; a pixel electrode layer electrically connected to the thin film transistor; a light-transmitting chromatic color resin layer between the thin film transistor and the pixel electrode layer; and an electrode layer over the second insulating layer and overlapping with the gate electrode layer and the channel formation region, wherein the channel formation region is included in a semiconductor layer, wherein the n-type region includes crystals each having a diameter of 1 nm to 10 nm, wherein the light-transmitting chromatic color resin layer has a light transmittance lower than a light transmittance of the semiconductor layer, wherein the oxide semiconductor contains indium, gallium, and zinc, wherein the n-type region contains indium, gallium, zinc and oxygen, wherein the second insulating layer contains silicon and oxygen, and wherein a length of the gate electrode layer is larger than a length of the semiconductor layer in a direction parallel to a channel length direction of the thin film transistor. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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35. A display device comprising:
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a thin film transistor comprising; a gate electrode layer; a first insulating layer over the gate electrode layer; a channel formation region, the channel formation region being over the first insulating layer and overlapping with the gate electrode layer; an n-type region including one of a source and a drain; a source electrode and a drain electrode over the channel formation region including an oxide semiconductor; and a second insulating layer over the channel formation region; a light-transmitting chromatic color resin layer over the second insulating layer; a third insulating layer over and in direct contact with the light-transmitting chromatic color resin layer; a pixel electrode layer electrically connected to one of the source electrode and the drain electrode of the thin film transistor; and an electrode layer over the second insulating layer and overlapping with the gate electrode layer and the channel formation region, wherein the light-transmitting chromatic color resin layer is between the thin film transistor and the pixel electrode layer, wherein the channel formation region is included in a semiconductor layer, wherein the n-type region includes crystals each having a diameter of 1 nm to 10 nm, wherein the light-transmitting chromatic color resin layer has a light transmittance lower than a light transmittance of the semiconductor layer, wherein the oxide semiconductor contains indium, gallium, and zinc, wherein the second insulating layer contains silicon and oxygen, wherein the n-type region contains indium, gallium, zinc and oxygen, wherein the pixel electrode layer contains indium tin oxide, wherein a length of the gate electrode layer is larger than a length of the semiconductor layer in a direction parallel to a channel length direction of the thin film transistor. - View Dependent Claims (36, 37, 38, 39, 40, 41, 42)
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Specification