Method for producing optoelectronic conversion semiconductor chips and composite of conversion semiconductor chips
First Claim
1. A method for producing optoelectronic conversion semiconductor chips, the method comprising:
- providing a growth substrate;
growing a semiconductor layer sequence on the growth substrate;
applying an electric contact to a rear side of the semiconductor layer sequence facing away from the growth substrate;
thinning the growth substrate;
after thinning, cutting the growth substrate and the semiconductor layer sequence to the electric contact, a dielectric or a metal layer thereby forming a second intermediate space, wherein the second intermediate space extends completely through the semiconductor layer sequence;
applying a conversion layer to the thinned growth substrate, wherein the conversion layer is arranged in the second intermediate space; and
singulating at least the thinned growth substrate and the semiconductor layer sequence for producing the optoelectronic conversion semiconductor chips.
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Abstract
A method for producing optoelectronic conversion semiconductor chips and a composite of conversion semiconductor chips are disclosed. In an embodiment the method includes growing a semiconductor layer sequence on a growth substrate, applying an electric contact on to a rear side of the semiconductor layer sequence facing away from the growth substrate, thinning the growth substrate, after thinning, cutting the growth substrate at least to the semiconductor layer sequence thereby forming a first intermediate space, applying a conversion layer on to the thinned growth substrate and singulating at least the thinned growth substrate and the semiconductor layer sequence.
48 Citations
9 Claims
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1. A method for producing optoelectronic conversion semiconductor chips, the method comprising:
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providing a growth substrate; growing a semiconductor layer sequence on the growth substrate; applying an electric contact to a rear side of the semiconductor layer sequence facing away from the growth substrate; thinning the growth substrate; after thinning, cutting the growth substrate and the semiconductor layer sequence to the electric contact, a dielectric or a metal layer thereby forming a second intermediate space, wherein the second intermediate space extends completely through the semiconductor layer sequence; applying a conversion layer to the thinned growth substrate, wherein the conversion layer is arranged in the second intermediate space; and singulating at least the thinned growth substrate and the semiconductor layer sequence for producing the optoelectronic conversion semiconductor chips. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification