Process for improving photoresist pillar adhesion during MRAM fabrication
First Claim
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1. A method for improving photo resist adhesion to an underlying hard layer, comprising:
- cleaning the surface of the hard layer by applying tetramethylammonium hydroxide (TMAH) to coat a hard mask layer of the wafer;
puddle developing the wafer for a first desired amount of time;
rinsing the wafer for a second desired amount of time;
spin drying the wafer;
baking the wafer for a third desired amount of time; and
proceeding with subsequent photolithographic processes on the wafer, which fabricates pillars therein.
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Abstract
A method for improving photo resist adhesion to an underlying hard mask layer. The method includes a cleaning step that includes applying tetramethylammonium hydroxide (TMAH) to coat a hard mask layer of a wafer. The method further includes puddle developing the wafer for a first desired amount of time, and rinsing the wafer in running water for a second desired amount of time. The method further includes spin drying the wafer, and baking the wafer for a third desired amount of time. The method concludes with the proceeding of subsequent photolithographic processes on the wafer.
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Citations
20 Claims
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1. A method for improving photo resist adhesion to an underlying hard layer, comprising:
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cleaning the surface of the hard layer by applying tetramethylammonium hydroxide (TMAH) to coat a hard mask layer of the wafer; puddle developing the wafer for a first desired amount of time; rinsing the wafer for a second desired amount of time; spin drying the wafer; baking the wafer for a third desired amount of time; and proceeding with subsequent photolithographic processes on the wafer, which fabricates pillars therein. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for improving photo resist pillar adhesion to a wafer, the method comprising:
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cleaning a surface of tantalum nitride hard layer by applying tetramethylammonium hydroxide (TMAH) to coat the tantalum nitride hard layer of the wafer; puddle developing the wafer for a first desired amount of time; rinsing the wafer in running water for a second desired amount of time; spin drying the wafer; baking the wafer for a third desired amount of time; and proceeding with subsequent photolithographic processes on the wafer. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method for manufacturing an MRAM device, the method comprising:
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applying tetramethylammonium hydroxide (TMAH) to coat a tantalum nitride hard layer of a wafer; submerging the wafer in a dish of TMAH for a first desired amount of time; rinsing the wafer in running water for a second desired amount of time; spin drying the wafer; baking the wafer for a third desired amount of time; and proceeding with subsequent photolithographic processes on the wafer. - View Dependent Claims (17, 18, 19, 20)
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Specification