Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
First Claim
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1. A method of manufacturing a laser diode device, the method comprising:
- providing a gallium and nitrogen containing material including a {20-21} crystalline surface region orientation;
forming an n-type cladding material overlying the gallium and nitrogen containing material, the n-type cladding material being substantially free from an aluminum bearing material;
forming an active region comprising at least three quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of 1 nm and greater, and each of the plurality of barrier layers having a thickness ranging from 1 nm to less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers;
forming a p-type cladding material overlying the active region, the p-type cladding material being free from AlGaN;
forming a p-type material overlying the p-type cladding material;
forming a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end;
forming a first facet on the first end; and
forming a second facet on the second end.
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Abstract
A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
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Citations
15 Claims
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1. A method of manufacturing a laser diode device, the method comprising:
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providing a gallium and nitrogen containing material including a {20-21} crystalline surface region orientation; forming an n-type cladding material overlying the gallium and nitrogen containing material, the n-type cladding material being substantially free from an aluminum bearing material; forming an active region comprising at least three quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of 1 nm and greater, and each of the plurality of barrier layers having a thickness ranging from 1 nm to less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers; forming a p-type cladding material overlying the active region, the p-type cladding material being free from AlGaN; forming a p-type material overlying the p-type cladding material; forming a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end; forming a first facet on the first end; and forming a second facet on the second end. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of manufacturing a laser diode device, the method comprising:
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providing a gallium and nitrogen containing material including a {20-21} crystalline surface region orientation; forming an n-type cladding material overlying the gallium and nitrogen containing material, the n-type cladding material being substantially free from an aluminum bearing material; forming an active region comprising at least three quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of lnm and greater, and each of the plurality of barrier layers having a p-type characteristic and a thickness ranging from lnm to less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers; forming a p-type cladding material overlying the active region, the p-type cladding material being substantially free from AlGaN; forming a p-type material overlying the p-type cladding material; forming a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end such that a first facet is formed on the first end, and a second facet is formed on the second end. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification