Multilayer wiring structure and its manufacturing method
First Claim
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1. A multilayer wiring structure comprising:
- a first conductive pattern provided in a first wiring layer, the first conductive pattern including a first main conductive layer;
an interlayer insulating film covering the first wiring layer, the interlayer insulating film having an opening for exposing a part of the first conductive pattern; and
a second conductive pattern provided in a second wiring layer and connected to the first conductive pattern through the opening,wherein the second conductive pattern includes a seed layer contacting the interlayer insulating film and a second main conductive layer provided on the seed layer, the second main conductive layer being formed of the same metal material as the first main conductive layer, andwherein the seed layer is removed at least at a part of a bottom portion of the opening, thereby the first and second main conductive layers are brought into contact with each other at least at the part of the bottom portion of the opening without the seed layer being interposed therebetween.
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Abstract
Disclosed herein is a multilayer wiring structure that includes a first metal layer; an interlayer insulating film formed on the first metal layer, the interlayer insulating film having an opening that exposes a first area of the first metal layer; a second metal layer formed on an inner wall of the opening; and a third metal layer filling the opening via the second metal layer. The first and third metal layers are direct contact with each other at a bottom of the opening.
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Citations
15 Claims
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1. A multilayer wiring structure comprising:
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a first conductive pattern provided in a first wiring layer, the first conductive pattern including a first main conductive layer; an interlayer insulating film covering the first wiring layer, the interlayer insulating film having an opening for exposing a part of the first conductive pattern; and a second conductive pattern provided in a second wiring layer and connected to the first conductive pattern through the opening, wherein the second conductive pattern includes a seed layer contacting the interlayer insulating film and a second main conductive layer provided on the seed layer, the second main conductive layer being formed of the same metal material as the first main conductive layer, and wherein the seed layer is removed at least at a part of a bottom portion of the opening, thereby the first and second main conductive layers are brought into contact with each other at least at the part of the bottom portion of the opening without the seed layer being interposed therebetween. - View Dependent Claims (2, 3, 4, 5)
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6. A method of manufacturing a multilayer wiring structure, the method comprising:
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forming a first conductive pattern including a first main conductive layer; forming an interlayer insulating film covering the first conductive pattern; forming an opening in the interlayer insulating film for exposing a part of the first main conductive layer; forming a seed layer on the interlayer insulating film and inside the opening; exposing the first main conductive layer by removing at least partially the seed layer formed on a bottom portion of the opening; and forming a second main conductive layer formed of the same metal material as the first main conductive layer on the seed layer and the first main conductive layer exposed from the opening. - View Dependent Claims (7, 8, 9)
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10. An apparatus comprising:
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a first metal layer; an interlayer insulating film formed on the first metal layer, the interlayer insulating film having an opening that exposes a first area of the first metal layer; a second metal layer formed on an inner wall of the opening; and a third metal layer filling the opening via the second metal layer, wherein the first and third metal layers are direct contact with each other at a bottom of the opening. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification