Chemically-sensitive field effect transistor

• US 10,429,342 B2
• Filed: 12/09/2015
• Issued: 10/01/2019
• Est. Priority Date: 12/18/2014
• Status: Active Grant

• Current Assignee: Cardea Bio, Inc.
• Original Assignee: Edico Genome Corp. (Illumina Incorporated)
• Inventors: Hoffman, Paul, Lerner, Mitchell, Van Rooyen, Pieter
• Primary Examiner(s): Fan, Michele
• Application Number:
  US14/963,253
• Publication Number:
  US 20160178569A1
• Time in Patent Office: 1,392 Days
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
• CPC Class Codes: G01N 27/4146 involving nanosized elements, e.g. nanotubes, nanowires
• CPC Class Codes: G01N 27/4148 Integrated circuits therefor, e.g. fabricated by CMOS processing CMOS processing per se H01L21/82
• CPC Class Codes: H01L 29/1606 Graphene
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/778 with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface H01L29/803 takes precedence

Abstract

A chemically-sensitive field effect transistor is disclosed herein. The chemically-sensitive field effect transistor comprises a CMOS structure comprising a conductive source and a conductive drain, a channel and an analyte-sensitive dielectric layer. The channel extends from the conductive source to the conductive drain. The channel is composed of a one-dimensional transistor material or a two-dimensional transistor material. The analyte-sensitive dielectric layer is disposed over the channel. An I-V curve or an I-V_g curve is shifted in response to a chemical reaction occurring on or near the chemically-sensitive field effect transistor.

Claims

1. A chemically-sensitive field effect transistor having a multi-layered structure for performing a sequencing reaction involving the sequencing of strands of nucleic acids, the field effect transistor, comprising:

a substrate layer having an extended body;

a first insulating layer positioned above the extended body of the substrate layer;

a second insulating layer positioned above the first insulating layer;

a source electrode and a drain electrode each having a top surface and a bottom surface, the top surface separated from the bottom surface by opposing outer and inner side portions, each of the opposed side portions and each of the bottom surfaces of the source and drain electrodes being disposed within the first insulating layer, the source electrode being separated from the drain electrode by a distance;

a graphene layer positioned between the first insulating layer and second insulating layer and extending between the outer side portion of the source electrode and the outer side portion of the drain electrode thereby forming a channel between the source electrode and drain electrode, the graphene layer contacting the top surface of the source electrode and drain electrode; and

a reaction chamber formed by a well structure provided in the second insulating layer, the well structure having an opening at a top surface of the second insulating layer and extending toward the graphene layer the graphene layer forming a bottom layer of the reaction chamber, the reaction chamber configured for receiving and retaining one or more reactants therein for performing the sequencing reaction.

2. The chemically-sensitive field effect transistor according to claim 1, wherein the multi-layered structure is configured so as to shift or change a characteristic of an I-V curve or an I-Vg curve in response to a chemical reaction occurring within the reaction chamber of the well of the chemically-sensitive field effect transistor.

3. The chemically-sensitive field effect transistor according to claim 2, further comprising an analyte-sensitive dielectric layer.

4. The chemically-sensitive field effect transistor according to claim 3, wherein the analyte-sensitive dielectric layer comprises an oxide layer.

5. The chemically-sensitive field effect transistor according to claim 3, wherein the second insulating layer is composed of a polymer, polyimide, BCB, inorganic material, silicon oxide, a silicon nitride, a silicon oxynitride or a silicon carbide.

6. The chemically-sensitive field effect transistor according to claim 1, wherein the conductive source and the conductive drain are each comprised of a copper material, an aluminum material, a platinum material, or a gold material.

7. The chemically-sensitive field effect transistor according to claim 6, wherein the channel has a thickness of 50 nanometers or less.

8. A chemically-sensitive field effect transistor having a multi-layered structure for performing a biological reaction involving one or more of a deoxyribonucleic acid, a ribonucleic nucleic acid, and a protein, the field effect transistor comprising:

a substrate layer having an extended body;

a first insulating layer positioned above the extended body of the substrate layer;

a source electrode and a drain electrode positioned in or over the first insulating layer, the source electrode separated from the drain electrode by a distance;

a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes;

a graphene layer positioned between the first and second insulating layers and extending between the source and drain electrodes thereby forming a channel between the source electrode and drain electrode; and

a reaction chamber formed by a well structure provided in the second insulating layer, the well structure having an opening at a top surface of the second insulating layer and extending toward the graphene layer, the graphene layer substantially extending between an outer side portion of the drain electrode and an outer side portion of the source electrode and forming a bottom layer within the reaction chamber, the reaction chamber configured for receiving and retaining one or more of a deoxyribonucleic acid, a ribonucleic nucleic acid, and a protein therein for performing the biological reaction.

9. The chemically-sensitive field effect transistor according to claim 8, wherein the multi-layered structure is configured so as to shift an I-V curve or an I-Vg curve in response to the biological reaction occurring within the chamber of the well of the chemically-sensitive field effect transistor.

10. The chemically-sensitive field effect transistor according to claim 9, wherein a length of the channel from the source to the drain ranges from 0.05 micron to 2 microns, and a width of the channel ranges from 0.05 micron to 5 microns.

11. The chemically-sensitive field effect transistor according to claim 10, further comprising an analyte-sensitive dielectric layer.

12. The chemically-sensitive field effect transistor according to claim 8, wherein the biological reaction comprises a member selected from the group consisting of a nucleic acid sequencing reaction, a nucleic acid hybridization reaction, and a protein detection reaction, and the chemically-sensitive field effect transistor is configured for detecting a result of the reaction.

13. A chemically-sensitive field effect transistor having a multi-layered structure for performing a biological reaction involving fluidic reagents within a fluid, the field effect transistor comprising:

a substrate layer having an extended body;

a first insulating layer positioned above the extended body of the substrate layer;

a source electrode and a drain electrode positioned in or over the first insulating layer, the source electrode and the drain electrode being separated by a distance;

a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes;

a graphene layer positioned between the first and second insulating layers and substantially extending between an outer side portion of the drain electrode and an outer side portion of the source electrode to form a channel between the source and drain electrodes; and

a reaction chamber formed by a well structure provided in the second insulating layer, the well structure having an opening therein, the opening defined by opposed side portions and a bottom formed at least by the graphene layer, the reaction chamber configured for receiving and retaining one or more of the reagents in a fluid therein for performing a biological reaction.

14. The chemically-sensitive field effect transistor according to claim 13, wherein the one-dimensional transistor material or two-dimensional transistor material selected from the group consisting of a single layer planar graphene, black phosphorous, silicene, borophene, tungsten disulfide, germanane, nickel HITP, stanene and Mxenes.

15. The chemically-sensitive field effect transistor according to claim 13, further comprising an analyte-sensitive dielectric layer.

16. The chemically-sensitive field effect transistor according to claim 15, wherein the analyte-sensitive dielectric layer comprises an oxide layer.

17. The chemically-sensitive field effect transistor according to claim 13, wherein the biological reaction involves a biological material selected from the group consisting of a nucleotide, nucleic acid, and a protein, and the chemically-sensitive field effect transistor is configured for detecting the biological material.

18. A chemically-sensitive field effect transistor having a multi-layered structure for performing a biological reaction, the field effect transistor comprising:

a substrate layer, the substrate layer having an extended body;

a first insulating layer positioned above the extended body of the substrate layer;

a source electrode and a drain electrode positioned in the first insulating layer, the source electrode separated from the drain electrode by a distance;

a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes;

a graphene layer positioned between the first and second insulating layers and substantially extending between an outer side portion of the source electrode and an outer side portion of the drain electrodes to form a channel there-between; and

a reaction chamber formed by a well structure provided in the second insulating layer, the well structure having an opening, the opening including opposing side portions and a bottom formed by at least the graphene layer, the reaction chamber configured for receiving and retaining one or more reactants therein for performing the biological reaction.

19. The chemically-sensitive field effect transistor according to claim 18, wherein the multi-layered structure is configured so as to shift or change a characteristic of an I-V curve or an I-Vg curve in response to the biological reaction occurring within the reaction chamber of the well of the chemically-sensitive field effect transistor.

20. The chemically-sensitive field effect transistor according to claim 19, further comprising an analyte-sensitive dielectric layer.

21. The chemically-sensitive field effect transistor according to claim 20, wherein the analyte-sensitive dielectric layer comprises an oxide layer.

22. The chemically-sensitive field effect transistor according to claim 19, wherein the biological reaction involves a biological material selected from the group consisting of a nucleotide, nucleic acid, and a protein, and the chemically-sensitive field effect transistor is configured for detecting the biological material.