Chemically-sensitive field effect transistor
First Claim
1. A chemically-sensitive field effect transistor having a multi-layered structure for performing a sequencing reaction involving the sequencing of strands of nucleic acids, the field effect transistor, comprising:
- a substrate layer having an extended body;
a first insulating layer positioned above the extended body of the substrate layer;
a second insulating layer positioned above the first insulating layer;
a source electrode and a drain electrode each having a top surface and a bottom surface, the top surface separated from the bottom surface by opposing outer and inner side portions, each of the opposed side portions and each of the bottom surfaces of the source and drain electrodes being disposed within the first insulating layer, the source electrode being separated from the drain electrode by a distance;
a graphene layer positioned between the first insulating layer and second insulating layer and extending between the outer side portion of the source electrode and the outer side portion of the drain electrode thereby forming a channel between the source electrode and drain electrode, the graphene layer contacting the top surface of the source electrode and drain electrode; and
a reaction chamber formed by a well structure provided in the second insulating layer, the well structure having an opening at a top surface of the second insulating layer and extending toward the graphene layer the graphene layer forming a bottom layer of the reaction chamber, the reaction chamber configured for receiving and retaining one or more reactants therein for performing the sequencing reaction.
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Accused Products
Abstract
A chemically-sensitive field effect transistor is disclosed herein. The chemically-sensitive field effect transistor comprises a CMOS structure comprising a conductive source and a conductive drain, a channel and an analyte-sensitive dielectric layer. The channel extends from the conductive source to the conductive drain. The channel is composed of a one-dimensional transistor material or a two-dimensional transistor material. The analyte-sensitive dielectric layer is disposed over the channel. An I-V curve or an I-Vg curve is shifted in response to a chemical reaction occurring on or near the chemically-sensitive field effect transistor.
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Citations
22 Claims
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1. A chemically-sensitive field effect transistor having a multi-layered structure for performing a sequencing reaction involving the sequencing of strands of nucleic acids, the field effect transistor, comprising:
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a substrate layer having an extended body; a first insulating layer positioned above the extended body of the substrate layer; a second insulating layer positioned above the first insulating layer; a source electrode and a drain electrode each having a top surface and a bottom surface, the top surface separated from the bottom surface by opposing outer and inner side portions, each of the opposed side portions and each of the bottom surfaces of the source and drain electrodes being disposed within the first insulating layer, the source electrode being separated from the drain electrode by a distance; a graphene layer positioned between the first insulating layer and second insulating layer and extending between the outer side portion of the source electrode and the outer side portion of the drain electrode thereby forming a channel between the source electrode and drain electrode, the graphene layer contacting the top surface of the source electrode and drain electrode; and a reaction chamber formed by a well structure provided in the second insulating layer, the well structure having an opening at a top surface of the second insulating layer and extending toward the graphene layer the graphene layer forming a bottom layer of the reaction chamber, the reaction chamber configured for receiving and retaining one or more reactants therein for performing the sequencing reaction. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A chemically-sensitive field effect transistor having a multi-layered structure for performing a biological reaction involving one or more of a deoxyribonucleic acid, a ribonucleic nucleic acid, and a protein, the field effect transistor comprising:
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a substrate layer having an extended body; a first insulating layer positioned above the extended body of the substrate layer; a source electrode and a drain electrode positioned in or over the first insulating layer, the source electrode separated from the drain electrode by a distance; a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes; a graphene layer positioned between the first and second insulating layers and extending between the source and drain electrodes thereby forming a channel between the source electrode and drain electrode; and a reaction chamber formed by a well structure provided in the second insulating layer, the well structure having an opening at a top surface of the second insulating layer and extending toward the graphene layer, the graphene layer substantially extending between an outer side portion of the drain electrode and an outer side portion of the source electrode and forming a bottom layer within the reaction chamber, the reaction chamber configured for receiving and retaining one or more of a deoxyribonucleic acid, a ribonucleic nucleic acid, and a protein therein for performing the biological reaction. - View Dependent Claims (9, 10, 11, 12)
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13. A chemically-sensitive field effect transistor having a multi-layered structure for performing a biological reaction involving fluidic reagents within a fluid, the field effect transistor comprising:
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a substrate layer having an extended body; a first insulating layer positioned above the extended body of the substrate layer; a source electrode and a drain electrode positioned in or over the first insulating layer, the source electrode and the drain electrode being separated by a distance; a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes; a graphene layer positioned between the first and second insulating layers and substantially extending between an outer side portion of the drain electrode and an outer side portion of the source electrode to form a channel between the source and drain electrodes; and a reaction chamber formed by a well structure provided in the second insulating layer, the well structure having an opening therein, the opening defined by opposed side portions and a bottom formed at least by the graphene layer, the reaction chamber configured for receiving and retaining one or more of the reagents in a fluid therein for performing a biological reaction. - View Dependent Claims (14, 15, 16, 17)
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18. A chemically-sensitive field effect transistor having a multi-layered structure for performing a biological reaction, the field effect transistor comprising:
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a substrate layer, the substrate layer having an extended body; a first insulating layer positioned above the extended body of the substrate layer; a source electrode and a drain electrode positioned in the first insulating layer, the source electrode separated from the drain electrode by a distance; a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes; a graphene layer positioned between the first and second insulating layers and substantially extending between an outer side portion of the source electrode and an outer side portion of the drain electrodes to form a channel there-between; and a reaction chamber formed by a well structure provided in the second insulating layer, the well structure having an opening, the opening including opposing side portions and a bottom formed by at least the graphene layer, the reaction chamber configured for receiving and retaining one or more reactants therein for performing the biological reaction. - View Dependent Claims (19, 20, 21, 22)
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Specification