Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory
First Claim
1. A method, comprising:
- increasing a voltage of a first cell plate of a capacitor to change a voltage of a second cell plate of the capacitor, a second digit line, and a second sense node;
decreasing the voltage of the second cell plate and the second digit line to change the voltage of the first cell plate, a first digit line, and a first sense node, wherein decreasing the voltage of the second cell plate and the second digit line includes decreasing the voltage of the second cell plate from an increased voltage to an initial voltage of the second cell plate;
driving the first sense node to a first voltage and driving the second sense node to a second voltage responsive to the voltage of the first sense node being greater than the voltage of the second sense node; and
driving the first sense node to the second voltage and driving the second sense node to the first voltage responsive to the voltage of the first sense node being less than the voltage of the second sense node.
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Accused Products
Abstract
Apparatuses and methods are disclosed that include ferroelectric memory and for accessing ferroelectric memory. An example method includes increasing a voltage of a first cell plate of a capacitor to change the voltage of a second cell plate of the capacitor, a second digit line, and a second sense node. The voltage of the second cell plate and the second digit line is decreased to change the voltage of the first cell plate, a first digit line, and a first sense node. The first node is driven to a first voltage and the second node is driven to a second voltage responsive to the voltage of the first node being greater than the second node. The first node is driven to the second voltage and the second node is driven to the first voltage responsive to the voltage of the first node being less than the second node.
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Citations
15 Claims
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1. A method, comprising:
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increasing a voltage of a first cell plate of a capacitor to change a voltage of a second cell plate of the capacitor, a second digit line, and a second sense node; decreasing the voltage of the second cell plate and the second digit line to change the voltage of the first cell plate, a first digit line, and a first sense node, wherein decreasing the voltage of the second cell plate and the second digit line includes decreasing the voltage of the second cell plate from an increased voltage to an initial voltage of the second cell plate; driving the first sense node to a first voltage and driving the second sense node to a second voltage responsive to the voltage of the first sense node being greater than the voltage of the second sense node; and driving the first sense node to the second voltage and driving the second sense node to the first voltage responsive to the voltage of the first sense node being less than the voltage of the second sense node. - View Dependent Claims (2, 3, 4, 5)
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6. A method, comprising:
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increasing a voltage of a first cell plate of a capacitor to change a voltage of a second cell plate of the capacitor, a second digit line, and a second sense node; decreasing the voltage of the second cell plate and the second digit line to change the voltage of the first cell plate, a first digit line, and a first sense node, wherein decreasing the voltage of the second cell plate and the second digit line includes decreasing the voltage of the second cell plate from a reference voltage to ground; driving the first sense node to a first voltage and driving the second sense node to a second voltage responsive to the voltage of the first sense node being greater than the voltage of the second sense node; and driving the first sense node to the second voltage and driving the second sense node to the first voltage responsive to the voltage of the first sense node being less than the voltage of the second sense node.
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7. A method, comprising:
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increasing a voltage of a first cell plate of a capacitor to change a voltage of a second cell plate of the capacitor, a second digit line, and a second sense node; decreasing the voltage of the second cell plate and the second digit line to change the voltage of the first cell plate, a first digit line, and a first sense node; driving the first sense node to a first voltage and driving the second sense node to a second voltage responsive to the voltage of the first sense node being greater than the voltage of the second sense node; driving the first sense node to the second voltage and driving the second sense node to the first voltage responsive to the voltage of the first sense node being less than the voltage of the second sense node; and providing a constant voltage to the second sense node as a reference voltage, wherein decreasing the voltage of the second cell plate and the second digit line includes decreasing the voltage of the second cell plate from the constant voltage to ground.
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8. A method, comprising:
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increasing a voltage of a first cell plate of a capacitor to change a voltage of a second cell plate of the capacitor, a second digit line, and a second sense node; decreasing the voltage of the second cell plate and the second digit line to change the voltage of the first cell plate, a first digit line, and a first sense node; driving the first sense node to a first voltage and driving the second sense node to a second voltage responsive to the voltage of the first sense node being greater than the voltage of the second sense node; and driving the first sense node to the second voltage and driving the second sense node to the first voltage responsive to the voltage of the first sense node being less than the voltage of the second sense node, wherein the second cell plate of the capacitor changes from an initial voltage to a first increased voltage responsive to increasing the voltage of the first cell plate for a first polarization of the capacitor. - View Dependent Claims (9)
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10. A method, comprising:
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providing a read voltage to a first digit line and to a first plate of a capacitor coupled, via the first digit line, to a first sense node of a sense component; driving a voltage of a second digit line and a second plate of a capacitor coupled to a second sense node of the sense component; comparing at the sense component a voltage of the first sense node to a reference voltage; and driving the first and second sense nodes to a first and second voltages, respectively, based on the comparison, wherein the second sense node is coupled to the second digit line, and wherein the read voltage is provided to the first digit line and to the first plate of the capacitor coupled to the first digit line to cause the voltage of the second plate of the capacitor coupled to the second digit line, and of the second sense node of the sense component to change from an initial voltage to an increased voltage. - View Dependent Claims (11, 12)
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13. A method comprising:
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providing a read voltage to a first digit line and to a first plate of a capacitor coupled, via the first digit line, to a first sense node of a sense component; driving a voltage of a second digit line and a second plate of a capacitor coupled to a second sense node of the sense component; comparing at the sense component a voltage of the first sense node to a reference voltage; and driving the first and second sense nodes to a first and second voltages, respectively, based on the comparison, wherein the read voltage is provided to the first digit line to cause the voltage of the second sense node of the sense component to change from an initial voltage to an increased voltage, wherein the voltage of the second digit line and the second plate of the capacitor coupled to the second sense node of the sense component is driven to the initial voltage to cause the voltage of the first plate of the capacitor, the first digit line, and the first sense node to change, and wherein the first and second sense nodes are driven to the first and second voltages, respectively, based on the comparison between the voltage of the first sense node to the reference voltage.
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14. A method comprising:
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providing a read voltage to a first digit line and to a first plate of a capacitor coupled, via the first digit line, to a first sense node of a sense component; driving a voltage of a second digit line and a second plate of a capacitor coupled to a second sense node of the sense component; comparing at the sense component a voltage of the first sense node to a reference voltage; and driving the first and second sense nodes to a first and second voltages, respectively, based on the comparison, wherein the read voltage is provided to the first digit line to cause the voltage of the second sense node of the sense component to change from an initial voltage to an increased voltage, wherein the voltage of the second digit line and the second plate of the capacitor coupled to the second sense node of the sense component is driven to the initial voltage of the second sense node of the sense component, and wherein the initial voltage is ground.
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15. A method comprising:
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providing a read voltage to a first digit line and to a first plate of a capacitor coupled, via the first digit line, to a first sense node of a sense component; driving a voltage of a second digit line and a second plate of a capacitor coupled to a second sense node of the sense component; comparing at the sense component a voltage of the first sense node to a reference voltage; and driving the first and second sense nodes to a first and second voltages, respectively, based on the comparison, wherein, responsive to the read voltage provided to the first digit line to cause the voltage of the second sense node of the sense component to change from an initial voltage to a first increased voltage, the reference voltage is a first reference voltage, and wherein, responsive to the read voltage provided to the first digit line to cause the voltage of the second sense node of the sense component to change from an initial voltage to a second increased voltage, the reference voltage is a second reference voltage.
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Specification