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Methods of forming circuit-protection devices

  • US 10,431,577 B2
  • Filed: 02/09/2018
  • Issued: 10/01/2019
  • Est. Priority Date: 12/29/2017
  • Status: Active Grant
First Claim
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1. A method of forming a circuit-protection device, comprising:

  • forming a dielectric having a first thickness and having a second thickness, greater than the first thickness, over a semiconductor;

    forming the dielectric further having a third thickness greater than the second thickness, over the semiconductor;

    forming a conductor over the dielectric;

    patterning the conductor to retain a first portion of the conductor over a portion of the dielectric having the second thickness, and to retain substantially no portion of the conductor over a portion of the dielectric having the first thickness; and

    patterning the conductor to further retain a second portion of the conductor over a portion of the dielectric having the third thickness;

    wherein the retained first portion of the conductor defines a control gate of a first field-effect transistor of the circuit-protection device; and

    wherein the retained second portion of the conductor defines a control gate of a second field-effect transistor of the circuit-protection device connected in series with the first field-effect transistor.

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