Method for manufacturing a semiconductor device including a metal oxide film
First Claim
1. A method for manufacturing a semiconductor device comprising:
- forming an oxide semiconductor film at a first temperature;
processing the oxide semiconductor film into an island shape;
depositing a material to be a source electrode and a drain electrode over the oxide semiconductor film by a sputtering method;
processing the material to form the source electrode and the drain electrode;
forming a protective insulating film over the oxide semiconductor film, the source electrode and the drain electrode;
heating the protective insulating film at a second temperature which is higher than the first temperature;
forming a metal oxide film over the protective insulating film by a sputtering method; and
heating the protective insulating film at a third temperature which is higher than the first temperature,wherein at least one of the second temperature and the third temperature is the highest in the method.
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Abstract
A method for manufacturing a highly reliable semiconductor device is provided. The method includes the steps of: forming an oxide semiconductor film at a first temperature; processing the oxide semiconductor film into an island shape; not performing a process at a temperature higher than the first temperature, but depositing a material to be source and drain electrodes by a sputtering method; processing the material to form the source and drain electrodes; forming a protective insulating film, and then forming a first barrier film; adding excess oxygen or oxygen radicals to the protective insulating film through the first barrier film; performing heat treatment at a second temperature lower than 400° C. to diffuse the excess oxygen or oxygen radicals into the oxide semiconductor film; and removing part of the first barrier film and part of the protective insulating film by wet etching, and then forming a second barrier film.
123 Citations
20 Claims
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1. A method for manufacturing a semiconductor device comprising:
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forming an oxide semiconductor film at a first temperature; processing the oxide semiconductor film into an island shape; depositing a material to be a source electrode and a drain electrode over the oxide semiconductor film by a sputtering method; processing the material to form the source electrode and the drain electrode; forming a protective insulating film over the oxide semiconductor film, the source electrode and the drain electrode; heating the protective insulating film at a second temperature which is higher than the first temperature; forming a metal oxide film over the protective insulating film by a sputtering method; and heating the protective insulating film at a third temperature which is higher than the first temperature, wherein at least one of the second temperature and the third temperature is the highest in the method. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device, comprising:
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forming an oxide semiconductor film at a first temperature; processing the oxide semiconductor film into an island shape; depositing a material to be a source electrode and a drain electrode over the oxide semiconductor film by a sputtering method; processing the material to form the source electrode and the drain electrode; forming a protective insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; heating the protective insulating film at a second temperature which is higher than the first temperature; and forming a metal oxide film at a third temperature which is higher than the first temperature over the protective insulating film by a sputtering method, wherein at least one of the second temperature and the third temperature is the highest in the method. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification