Method of making a semiconductor switch device
First Claim
1. A method of making a semiconductor switch device, the method comprising:
- providing a semiconductor substrate having;
a major surface; and
a first semiconductor region having a first conductivity type located adjacent the major surface;
depositing a gate dielectric on the major surface of the substrate;
implanting ions into the first semiconductor region through an opening in a mask positioned over the first semiconductor region, thereby to form a well region located in the first semiconductor region, the well region having a second conductivity type different to the first conductivity type;
depositing and patterning a gate electrode material on the gate dielectric to form a gate electrode located directly above the well region; and
performing ion implantation to;
form a source region having said first conductivity type located in the well region on a first side of the gate electrode, andform a drain region having said first conductivity type located outside the well region on a second side of the gate electrode;
wherein a lateral dimension of the opening in the mask is substantially equal to Lsource+Lg+MTL;
wherein Lsource is a length of the source region measured from an edge of the gate electrode on the first side of the gate electrode;
wherein Lg is a gate length of the semiconductor switch device; and
wherein MTL is a mask tolerance of the opening, and wherein MTL≤
400 nm.
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Abstract
A semiconductor switch device and a method of making the same. The method includes providing a semiconductor substrate having a major surface and a first semiconductor region having a first conductivity type. The method further includes implanting ions into the first semiconductor region through an opening in a mask positioned over the first semiconductor region, thereby to form a well region located in the first semiconductor region, the well region having a second conductivity type different to the first conductivity type. The method also includes depositing and patterning a gate electrode material on a gate dielectric to form a gate electrode located directly above the well region. The method further includes performing ion implantation to form a source region located in the well region on a first side of the gate, and to form a drain region located outside the well region on a second side of the gate.
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Citations
12 Claims
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1. A method of making a semiconductor switch device, the method comprising:
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providing a semiconductor substrate having; a major surface; and a first semiconductor region having a first conductivity type located adjacent the major surface; depositing a gate dielectric on the major surface of the substrate; implanting ions into the first semiconductor region through an opening in a mask positioned over the first semiconductor region, thereby to form a well region located in the first semiconductor region, the well region having a second conductivity type different to the first conductivity type; depositing and patterning a gate electrode material on the gate dielectric to form a gate electrode located directly above the well region; and performing ion implantation to; form a source region having said first conductivity type located in the well region on a first side of the gate electrode, and form a drain region having said first conductivity type located outside the well region on a second side of the gate electrode; wherein a lateral dimension of the opening in the mask is substantially equal to Lsource+Lg+MTL; wherein Lsource is a length of the source region measured from an edge of the gate electrode on the first side of the gate electrode; wherein Lg is a gate length of the semiconductor switch device; and wherein MTL is a mask tolerance of the opening, and wherein MTL≤
400 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification