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Semiconductor device

  • US 10,431,677 B2
  • Filed: 02/08/2016
  • Issued: 10/01/2019
  • Est. Priority Date: 03/27/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor layer of SiC which includes an active portion;

    a plurality of MIS transistors which are formed at the active portion, the active portion partitioned into the plurality of MIS transistors by a plurality of gate trenches, and each of the MIS transistors having a first conductive-type source region, a second conductive-type channel region, and a first conductive-type drain region sequentially along a side surface of the gate trench;

    a plurality of first gate finger trenches which are arranged by extended portions of the gate trenches at a gate finger portion;

    a gate electrode embedded in each of the gate trenches and the first gate finger trenches via a gate insulating film;

    a second conductive-type first bottom-portion impurity region which is formed at least at a bottom portion of the first gate finger trenches;

    a gate finger which is electrically connected to the first gate finger trenches and the gate electrode;

    a source electrode formed over the semiconductor layer;

    a conductive film between the source electrode and the semiconductor layer, having a second insulating film between the conductive film and the semiconductor layer, the conductive film being present only on the second insulating film, the source electrode being in direct contact with a second conductive-type channel contact region in the semiconductor layer, and the conductive film being between two adjacent gate trenches;

    and;

    a second conductive-type electric field relaxation region which is formed more deeply than a bottom portion of the first gate finger trench.

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