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Preparation methods for semiconductor layer and TFT, TFT and array substrate comprising semiconductor layer

  • US 10,431,692 B2
  • Filed: 05/20/2016
  • Issued: 10/01/2019
  • Est. Priority Date: 03/07/2016
  • Status: Active Grant
First Claim
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1. A preparation method for a transistor, comprising:

  • forming a silicon dioxide insulating layer as sidewalls at two opposing ends of a semiconductor layer to be formed on a flexible substrate;

    subjecting two opposing surfaces of the sidewalls to amination treatment using aminopropyltriethoxy silane (APTES) solution so that an aminosiloxane monolayer self-assembly is formed on the two opposing surfaces of the sidewalls;

    carboxylating a carbon nanotube solution and making the carboxylated carbon nanotube solution on a surface of the flexible substrate and between the two opposing surfaces formed with the aminosiloxane monolayer self-assembly to form a carbon nanotube film between the two opposing surfaces;

    removing portions of the carbon nanotube film above a top surface of the sidewalls to form the semiconductor layer no higher than the top of the sidewalls;

    forming a gate insulating film on the semiconductor layer;

    forming via holes in the gate insulating layer;

    forming a metal film by vapor deposition or sputtering process; and

    forming a source and a drain at the via holes by patterning process such that the source and the drain are in contact with the semiconductor layer.

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